A5005572481- Semiconductor materials and devices
- Advancements in Photolithography Techniques
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Electron and X-Ray Spectroscopy Techniques
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Battery Materials
- Thin-Film Transistor Technologies
- Advanced Battery Materials and Technologies
- Metal and Thin Film Mechanics
- Copper Interconnects and Reliability
- Advanced X-ray Imaging Techniques
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Supercapacitor Materials and Fabrication
- Plasma Diagnostics and Applications
- Transition Metal Oxide Nanomaterials
- Cryospheric studies and observations
- Nanofabrication and Lithography Techniques
Hanyang University
2016-2025
Anyang University
2012-2025
Materials Science & Engineering
2003-2025
Sungkyunkwan University
2021-2024
Seoul National University
2017-2024
The University of Texas at Dallas
2020-2022
Dow Chemical (United States)
2022
Kangwon National University
2022
Inha University
2022
Suwon Research Institute
2021
Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on modulate channel potential. Here, we study a novel and facile approach based atomic layer deposition through ozone functionalization high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms have been studied theoretically using ab initio calculations experimentally in situ monitoring transport properties. It is...
Neuromorphic computing, which mimics the structure and principles of human brain, has potential to facilitate hardware implementation next-generation artificial intelligence systems process large amounts data with very low power consumption. Among them, XNOR synapse-based Binary Neural Network (BNN) been attracting attention due its compact neural network parameter size cost. The previous synapse drawbacks, such as a trade-off between cell density accuracy. In this work, we show nonvolatile...
Herein, Ag-ZnO core-shell nanoparticles (NPs) with enhanced photocatalytic activity were prepared by coating Ag metal cores ZnO semiconductor shells through atomic layer deposition (ALD). Instrumental analysis revealed that the ultra-thin and conformal nature of shell allowed NPs to simultaneously exploit properties plasmonic Ag. In a rhodamine B photodegradation test performed under artificial sunlight, exhibited better performance than other photocatalysts, namely ALD-ZnO coated NPs. The...
Abstract The development of artificial tactile receptor systems is important in the fields prosthetic devices, interfaces for metaverse, and sensors. A pressure sensor memory device may be used this system to replicate detecting capabilities human skin. implementation that take into account mass production miniaturization still difficult. Here, a flexible built using conventional semiconductor processes combine vertically stacked piezoelectric with neuromorphic presented. As fundamental...
Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for MOS gate dielectric application is presented. 2/O-nitrided shows much tighter distribution time-dependent breakdown (TDDB) characteristics than oxide. MOSFETs with prepared by this method show improved initial performance and enhanced device reliability compared to those These improvements are attributed the incorporation a small amount nitrogen ( approximately 1.5 at.%) at Si-SiO/sub interface without introducing...
The Y<sub>2</sub>O<sub>3</sub> films grown with a new and heteroleptic liquid Y precursor, (iPrCp)<sub>2</sub>Y(iPr-amd), have been investigated chemical properties of atomic layer deposition process, material characterization the deposited film its non-volatile resistive switching behaviour.
Abstract Despite their high energy densities, Li‐rich layered oxides suffer from low capacity retention and continuous voltage decay caused by the migration of transition‐metal cations into Li layers. The cation stabilizes oxidized oxygen anions through decoordination metal once participate in redox reaction. Structural disordering is thus considered inevitable most oxides. However, herein, a Mg‐substituted oxide, 1.2 Mg 0.2 Ru 0.6 O 2 , with structural electrochemical stability presented....
This study introduces a novel approach to enhance the electrical and reliability characteristics of metal-oxide-semiconductor transistors (MOSFETs) through high-pressure microwave annealing (HPMWA) as post-metallization (PMA) technique. HPMWA effectively passivates traps by supplying energy in form both heat microwaves, thereby offering key advantages such low-temperature processing (≤350 °C), rapid volumetric heating, material selectivity. These factors collectively lead significant...
This study investigates the differences in lithographic impact of particles on pellicle surface depending type extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how imaging performance is affected by locally obstructed diffraction caused a 10 μm × patterned tin particle intentionally fabricated surface. The resulting critical dimension variations were found to be approximately three times greater line-and-space patterns than contact hole patterns....
The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, greater insusceptibility to pattern collapse compared their purely organic counterparts. However, variations synthesis/coating approaches chemistry...
MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control grown O/sub 2/, exhibit significantly improved resistance charge trapping and interface state generation under hot-carrier stressing. In addition, both breakdown time are considerably. MOSFETs with dielectrics enhanced current drivability g/sub m/ degradation during channel hot-electron stressing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The discovery of ferroelectricity in HfO2-based materials 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal budget process. Based on experiment demonstrations over the past 10 years, well known that HZO show excellent when sandwiched between TiN top bottom electrodes. This work reports comprehensive study effect...
Abstract Although Li 2 MnO 3 exhibits high capacity via anionic oxygen redox, it suffers from rapid decay owing to structural disordering accompanying irreversible Mn migration and O release. To promote the reversibility of redox reaction, 1.8 Mg 0.3 0.9 as a novel cathode material, prepared by partially substituting + 4+ with redox‐inactive 2+ stabilizer is proposed. delivers specific energy density ≈310 mAh g −1 ≈915 Wh kg , respectively. In particular, power‐capability cycle performance...
The resistance switching behaviors of SiO2, HfO2, and TiO2 are investigated to elucidate their universal physical origins. It is demonstrated that a multideposition film fabrication process consisting repeated thin deposition low-temperature annealing in O2 ambient leads superior behaviors, such as forming-free characteristics, low voltage, high ratio low- high-resistance states compared with the conventional sputtered film. From characteristics binary metal oxide films, it also observed...
The dielectric stacking effects of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and HfO thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, voltage linearity the dielectrics. stacked dielectrics over three show enhancement permittivity quadratic coefficient compared to one-layer Stacking five attributes improving current...