A stretchable resistive pressure sensor is achieved by coating a compressible substrate with highly electrode. The contains an array of microscale pyramidal features, and the electrode comprises polymer composite. When pressure-induced geometrical change experienced maximized at 40% elongation, sensitivity 10.3 kPa−1 achieved.

Diverse signals generated from the sensing elements embedded in flexible electronic skins (e-skins) are typically interfered by strain energy through processes such as touching, bending, stretching or twisting. Herein, we demonstrate a bimodal sensor that can separate target signal mechanical integration of multi-stimuli responsive gate dielectric and semiconductor channel into single field-effect transistor (FET) platform. As service to our authors readers, this journal provides supporting...

The electron conduction mechanism in the above-threshold regime amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. band tail state slope controls field effect mobility, while average spatial coherence length potential fluctuation control In these limits, mobility found follow a power law, from which universal versus carrier concentration dependence extracted.

We propose a HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to conductance states. By optimizing the pulse condition, we obtained 32 levels for both potentiation and depression. Furthermore, field-effect transistor simulated using multiple The simulation results show linear symmetric can be by applying optimum...

In recent years, several experimental approaches have been adopted to study and understand the mechanism improve ferroelectricity of fluoritetype hafnia-based ferroelectric materials. this regard, significant efforts made elucidate role top electrode bottom (TE BE) materials in defining such systems, especially terms induced mechanical tensile stress by these during process annealing. However, effect material was not investigated both at TE BE, despite numerous efforts, there is still a lack...

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with gain up to 10^5. The origin of NPC is attributed depletion conduction channels by light assisted hot electron trapping, supported gate voltage threshold shift and wavelength dependent photoconductance measurements. Scanning photocurrent microscopy excludes possibility that originates from NW/metal contacts reveals competing...

Passivated Hf–In–Zn–O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin PPC following observations its temperature- and wavelength-dependence. This further corroborated by photoluminescence spectrum HIZO. We also show that gate can control decay in dark, giving rise memory action.

This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, presence oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise absorption blue green photons. At higher energies, we have usual band-to-band absorption. In particular, defects remain ionized even...

Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted marked attention for non-volatile, super-steep switching devices, and neuromorphic application due to their fast switching, scalability, CMOS compatibility.

We report on 4.5-nm-thick Hf0.5Zr0.5O2 (HZO) thin-film-based ferroelectric tunnel junctions (FTJs) with a tungsten (W) bottom electrode. The HZO the W electrode exhibits stable ferroelectricity remanent polarization of 14 μC/cm2, an enhanced tunneling electroresistance 16, and excellent synaptic properties. found that large tensile stress was induced thin film, owing to low thermal expansion coefficient results in effective formation orthorhombic phase, even ultra-thin film. This verified by...

Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental building blocks for a new generation of applications ranging from interactive displays imaging to future electronic systems that are unconstrained by form factor. This makes the quest high mobility materials processed at low temperatures even more compelling, enable layering circuits on plastic possibly paper substrates. Transparency is also an attractive feature enables seamless embedding electronics...

This article highlights the role of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> seed/dielectric insertion layers on ferroelectric properties hafnium zirconium oxide (HZO)-based metal-ferroelectric-metal (MFM) capacitors. Maximum remanent polarization (Pr) 22.1 μC/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was achieved when seed layer critical thickness (10 Å) inserted at bottom HZO films. However, as increases...

We present the development of a flexible bimodal sensor using paper platform and inkjet printing method, which are suited for low-cost fabrication processes realization devices. In this study, we employed vertically stacked device architecture in temperature is on top pressure operated different principles, allowing minimization interference effects. For placed layer, used thermoelectric effect formed closed-loop thermocouple composed two printable inks (conductive PEDOT:PSS silver...

Abstract Mechanically adaptive electronic skins ( e -skins) emulate tactition and thermoception by cutaneous mechanoreceptors thermoreceptors in human skin, respectively. When exposed to multiple stimuli including mechanical thermal stimuli, discerning quantifying precise sensing signals from sensors embedded -skins are critical. In addition, different detection modes for rapidly adapting (RA) slowly (SA) skin simultaneously required. Herein, we demonstrate the fabrication of a highly...

Electronic skin (e-skin) is designed to mimic the comprehensive nature of human skin. Various advances in e-skin continue drive development multimodal tactile sensor technology on flexible and stretchable platforms. incorporates pressure, temperature, texture, photographic imaging, other sensors as well data acquisition signal processing units formed a soft substrate for humanoid robots, wearable devices, health monitoring electronics that are most critical applications electronics. This...

In the quest for highly scalable and three-dimensional (3D) stackable memory components, ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies nonvolatile logic neuromorphic computing. Most FTJs, however, require additional nonlinear devices to suppress sneak-path current, limiting large-scale arrays in practical applications. Moreover, giant tunneling electroresistance (TER) remains challenging due their inherent weak polarization. Here, we present that...

Neuromorphic computing, which mimics the structure and principles of human brain, has potential to facilitate hardware implementation next-generation artificial intelligence systems process large amounts data with very low power consumption. Among them, XNOR synapse-based Binary Neural Network (BNN) been attracting attention due its compact neural network parameter size cost. The previous synapse drawbacks, such as a trade-off between cell density accuracy. In this work, we show nonvolatile...

The hygroscopic nature of lanthanide oxides such as Pr2O3, Sm2O3, Gd2O3, and Dy2O3 was characterized by means x-ray photoelectron spectroscopy its effect on the electrical characteristics compounds investigated. Among four samples, Pr2O3 found to be most reactive with water which can attributed relatively large ionic radius lower electronegativity Pr. In contrast, least water. A direct correlation between hygroscopicity elements found. With increasing hygroscopicity, a significant growth...

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping persistent photoconductivity (PPC). In the absence light, polarity stress controls magnitude direction threshold voltage shift (ΔVT), while under stress, VT consistently shifts negatively. all cases, there was no significant change in field-effect mobility. Light gives...

Paper-based electronic devices are attracting considerable attention, because the paper platform has unique attributes such as flexibility and eco-friendliness.