Geon-Hyeong Kang

ORCID: 0000-0002-8543-6123
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About
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Research Areas
  • Microwave Dielectric Ceramics Synthesis
  • Semiconductor materials and devices
  • Perovskite Materials and Applications
  • Ferroelectric and Piezoelectric Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Layered Double Hydroxides Synthesis and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Inorganic Chemistry and Materials

Korea Advanced Institute of Science and Technology
2025

Korea Institute of Science and Technology
2022

Seoul National University of Science and Technology
2021

This study introduces a novel approach to enhance the electrical and reliability characteristics of metal-oxide-semiconductor transistors (MOSFETs) through high-pressure microwave annealing (HPMWA) as post-metallization (PMA) technique. HPMWA effectively passivates traps by supplying energy in form both heat microwaves, thereby offering key advantages such low-temperature processing (≤350 °C), rapid volumetric heating, material selectivity. These factors collectively lead significant...

10.1116/6.0004086 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2025-01-01

In this study, we demonstrate the growth of high-quality KTa1-xNbxO3 (KTN) thin films by using multi-target radio frequency (RF) magnetron co-sputtering with KTaO3, KNbO3, and K2CO3 targets. KTaO3 KNbO3 targets were used to control Ta/Nb ratio while target was supply excess potassium (K) compensate for K deficiency. Through careful RF powers applied each target, perovskite KTN (x = 0.53) grown on various single crystal substrates. Variable temperature Raman spectroscopy revealed that exhibit...

10.3390/coatings12111787 article EN Coatings 2022-11-21
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