- Microwave Dielectric Ceramics Synthesis
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Advancements in Semiconductor Devices and Circuit Design
- Layered Double Hydroxides Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Inorganic Chemistry and Materials
Korea Advanced Institute of Science and Technology
2025
Korea Institute of Science and Technology
2022
Seoul National University of Science and Technology
2021
This study introduces a novel approach to enhance the electrical and reliability characteristics of metal-oxide-semiconductor transistors (MOSFETs) through high-pressure microwave annealing (HPMWA) as post-metallization (PMA) technique. HPMWA effectively passivates traps by supplying energy in form both heat microwaves, thereby offering key advantages such low-temperature processing (≤350 °C), rapid volumetric heating, material selectivity. These factors collectively lead significant...
In this study, we demonstrate the growth of high-quality KTa1-xNbxO3 (KTN) thin films by using multi-target radio frequency (RF) magnetron co-sputtering with KTaO3, KNbO3, and K2CO3 targets. KTaO3 KNbO3 targets were used to control Ta/Nb ratio while target was supply excess potassium (K) compensate for K deficiency. Through careful RF powers applied each target, perovskite KTN (x = 0.53) grown on various single crystal substrates. Variable temperature Raman spectroscopy revealed that exhibit...