A5034095384- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- Physical Unclonable Functions (PUFs) and Hardware Security
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Ferroelectric and Piezoelectric Materials
- Quantum-Dot Cellular Automata
- Magnetic Properties and Applications
- VLSI and Analog Circuit Testing
- Metal and Thin Film Mechanics
- Advancements in Battery Materials
- 3D IC and TSV technologies
Korea Advanced Institute of Science and Technology
2022-2025
This study introduces a novel approach to enhance the electrical and reliability characteristics of metal-oxide-semiconductor transistors (MOSFETs) through high-pressure microwave annealing (HPMWA) as post-metallization (PMA) technique. HPMWA effectively passivates traps by supplying energy in form both heat microwaves, thereby offering key advantages such low-temperature processing (≤350 °C), rapid volumetric heating, material selectivity. These factors collectively lead significant...
Hafnium dioxide-based ferroelectric (FE) films are emerging as pivotal materials for advanced memory storage and neuromorphic computing, particularly in ultra-scaled dynamic random-access (DRAM) technologies. To meet the stringent DRAM...
This article presents a 3D ferroelectric NAND flash memory with wide MW, low operation voltage, fast PGM/ERS speed, and higher endurable cycles based on HfZrO film that shows excellent ferroelectricity even at relatively thick thickness.
Recently, hafnia-based ferroelectrics are currently being investigated as next-generation memory devices due to their excellent CMOS process compatibility and functionality. However, some of the ferroelectric commonly exhibit an imprint effect charged defects around interfacial layer, which has negative impacts on devices. it can be applied various applications long field is carefully adjusted. In this work, we introduced a strategy control in bilayer capacitors by utilizing tantalum oxide...
This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array to satisfy the stringent size requirements of Internet-of-Things devices. Each cell in SR-FTJ consists two SR-FTJs stacked vertically, resulting ultrahigh density. The can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable (BCAM) physically unclonable function (PUF) dual-mode operation. In operation, amount current flowing through remains same, stable PUF...
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-power and high-density nonvolatile memory devices in processing-in-memory (PIM). However, their small window (MW) limited endurance severely degrade the area efficiency reliability of PIM devices. Herein, we overcome such challenges using key approaches covering from material to device array architecture. High ferroelectricity was successfully demonstrated considering thermodynamics kinetics, even a...
In this work, we demonstrate a novel approach to superior multilevel-cell (MLC) ferroelectric field-effect transistor (FeFET) with large memory window (MW) and negligible <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula> variation toward MLC operation. We realized high ferroelectricity in relatively thick HZO (FE) layer for FeFET MW [MW notation="LaTeX">$\propto $...
Hafnia-based ferroelectric materials are recently drawing a significant attention for future electronic devices; however, there is need to further enhance their functionality practical applications. Especially, an imprinting effect has been regarded as defect be reduced in ferroelectrics; yet, it can positively applied various devices with the of self-rectifying behavior and threshold voltage adjustment. For first time, we report high bilayer stack capacitors [TiN/Hf0.5Zr0.5O2 (HZO)/tantalum...
Abstract Flash memory is a promising candidate for use in in‐memory computing (IMC) owing to its multistate operations, high on/off ratio, non‐volatility, and the maturity of device technologies. However, operation voltage, slow speed, string array structure severely degrade energy efficiency IMC. To address these challenges, novel negative capacitance‐flash (NC‐flash) memory‐based IMC architecture proposed. stabilize utilize capacitance (NC) effect, HfO 2 ‐based reversible single‐domain...
In this paper, we report for the first time effect of high-pressure microwave annealing (HPMWA) on electrical properties hafnium zirconium oxide capacitors. The technique has been utilized to increase ferroelectricity in hafnia and is very effective curing defect film at interface. However, it still requires a relatively high process temperature >450 °C. This not compatible with use an semiconductor-based ferroelectric thin transistor (TFT). Thus, need develop achieving lowering even low...
In order to overcome the bottleneck between central processor unit and memory as well issue of energy consumption, computing-in-memory (CIM) is becoming more popular an alternative traditional von Neumann structure. However, artificial intelligence advances, networks require CIM devices store billions parameters in handle huge data traffic demands. Monolithic three-dimensional (M3D) stacked ferroelectric thin-film transistors (FeTFTs) are one promising techniques for realizing high-density...
The morphotropic phase boundary (MPB), which arises from the combination of antiferroelectric and ferroelectric phases, demonstrates highest dielectric constant ( κ ) compared to other phases. This emphasizes its potential as a leading contender for films in future dynamic random access memory (DRAM) capacitors. MPB‐based high‐ materials using hafnia have shown trade‐off between equivalent oxide thickness (EOT) leakage current density J leak when crystallization temperature increases with...
In this paper, we propose and experimentally demonstrate a six-level ferroelectric cell with six switchable polarization states using novel fixed-charge method.
In this study, we present a remarkable improvement in the performance of hafnia-based ferroelectric tunnel junctions (FTJs) using oxygen scavenging technology and extremely low-damage (ELD) deposition, leading to significant increase tunneling electroresistance ratio $({\mathrm {TER}}) (\gt 2 \times 10^{4})$, on-current density $(\gt 10^{-2}\mathrm{A} /cm^{2})$, self-rectifying {RR}}) 1.5 10^{3})$. First-principles DFT simulations were also used evaluate how asymmetric vacancy (V <inf...
This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array which affords dual-mode operation as content-addressable memory (CAM) and physically unclonable function (PUF). The PUF mode of the proposed SR-FTJ does not require any temporary transfer stored CAM data to buffer, prevents additional area overhead or potential security threats. Experimental measurements verify feasibility operation. Further simulations using model reflecting measured...
We provide a methodology for designing thermally stable hafnia ferroelectric (FE) materials to be taken into account while fabricating 3D memory devices. reveal the underlying origins thermal instability of FE in terms kinetics and material science. Furthermore, we suggest adopting dopants whose ionic radius is smaller than Hf matrix as feasible option demonstrate material. Using this approach, robust ferroelectricity achieved even at subsequent budget (TB) 750 °C 30 min. The improved...
The effect of negative capacitance (NC), which can internally boost the voltage applied to a transistor, has been considered overcome fundamental Boltzmann limit transistor. To stabilize NC effect, dielectric (DE) must be integrated into heterostructure with ferroelectric (FE) film. However, in multidomain hafnia, charge boosting is reduced owing lowering depolarization field originating from stray at each domain, and simultaneously, operating increases division DE. Here, we demonstrate core...
The 3D NAND flash architecture has adopted the incremental step pulse program (ISPP) operation, involving repetition of (PGM) & read, with aim reducing Vth variation. However, repetitive PGM read operations degrade memory window (MW) and endurance properties charge trap (CTF) device. Thus, enhancements for MW fast speed are consistently desired. In this research, we report a high efficiency multilevel-cell CTF device using negative capacitance (NC) effect in an imprinted antiferroelectric...
Ferroelectric Field-Effect Transistors (FeFETs) attract the interest of researchers due to their capability low power and high-speed operation for computing in memory (CIM). However, challenges with poor window (MW) reliability FeFETs have triggered problems density CIM. Our study addresses these obstacles through a comprehensive approach, including materials, devices, array architecture. We successfully demonstrated robust ferroelectric properties relatively thick (~30 nm) (FE) materials....
Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and neuromorphic computing because of their rapid switching speed, exceptional reliability, low-voltage operations. In addition, it demonstrates process compatibility with advanced thin film techniques such as atomic layer deposition (ALD). Conventical radio frequency (RF) plasma-enhanced (PE) ALD offers various advantages including enhanced reaction rates, improved characteristics, a lower temperature....