A5007072094- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Semiconductor materials and devices
- ZnO doping and properties
- Organic Light-Emitting Diodes Research
- Conducting polymers and applications
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Memory and Neural Computing
- Quantum Dots Synthesis And Properties
- Molecular Junctions and Nanostructures
- Analytical Chemistry and Sensors
- Graphene research and applications
- Nanomaterials and Printing Technologies
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Pulsed Power Technology Applications
- Electrohydrodynamics and Fluid Dynamics
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- High voltage insulation and dielectric phenomena
- Carbon Nanotubes in Composites
- Electromagnetic Launch and Propulsion Technology
Electronics and Telecommunications Research Institute
2015-2024
Korea University of Science and Technology
2020-2024
Daejeon University
2017
Government of the Republic of Korea
2015-2017
University of Illinois Urbana-Champaign
2014-2017
Pohang University of Science and Technology
2006-2016
Polymer Research Institute
2014
Pohang TechnoPark (South Korea)
2014
Samsung (South Korea)
2011-2012
Seoul National University of Science and Technology
2010
Here we demonstrate materials and operating conditions that allow for high-resolution printing of layers quantum dots (QDs) with precise control over thickness submicron lateral resolution capabilities use as active QD light-emitting diodes (LEDs). The shapes thicknesses the patterns exhibit systematic dependence on dimensions nozzle ink composition in ways nearly arbitrary, when exploited a fully automated tool. Homogeneous arrays QDs serve basis corresponding LEDs excellent performance....
Dual-functioning displays, which can simultaneously transmit and receive information energy through visible light, would enable enhanced user interfaces device-to-device interactivity. We demonstrate that double heterojunctions designed into colloidal semiconductor nanorods allow both efficient photocurrent generation a photovoltaic response electroluminescence within single device. These dual-functioning, all-solution-processed double-heterojunction nanorod light-responsive light-emitting...
Abstract The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field electronics, including field‐effect transistors. Quantitative control over drying speed during dip‐coating permits optimization film formation, although kinetics crystallization at air–solution–substrate contact line are still not well understood. Here, we report facile one‐step growth self‐aligning, soluble acene crystal...
Here, we report multilayer stacking of films quantum dots (QDs) for the purpose tailoring energy band alignment between charge transport layers and light emitting different color in dot light-emitting diodes (QD LED) maximum efficiency full operation. The performance QD LEDs formed by transfer printing compares favorably to that conventional devices fabricated spin-casting. Results indicate zinc oxide (ZnO) titanium dioxide (TiO2) can serve effectively as electron (ETLs) red green/blue LEDs,...
Recent advances in colloidal quantum dot light-emitting diodes (QD-LEDs) have led to efficiencies and brightness that rival the best organic LEDs. Nearly ideal internal efficiency being achieved leaves light outcoupling as only remaining means improve external (EQE) but might require radically different device design reoptimization. However, current state-of-the-art QD-LEDs are based on spherical core/shell QDs, effects of shape optical anisotropy remain essentially unexplored. Here, we...
Preventing reactive gas species such as oxygen or water is important to ensure the stability and durability of organic electronics. Although inorganic materials have been predominantly employed protective layers, their poor mechanical property has hindered practical application flexible The densely packed hexagonal lattice carbon atoms in graphene does not allow transmission small molecules. In addition, its outstanding flexibility optical transmittance are expected be useful overcome...
Crystalline silicon-based complementary metal-oxide–semiconductor transistors have become a dominant platform for today's electronics. For such devices, expensive and complicated vacuum processes are used in the preparation of active layers. This increases cost restricts scope applications. Here, we demonstrate high-performance solution-processed CdSe nanocrystal (NC) field-effect (FETs) that exhibit very high carrier mobilities (over 400 cm2/(V s)). is comparable to crystalline transistors....
We investigated the effects of direct solvent exposure on properties [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) films and poly(3-hexylthiophene) (P3HT)/PCBM blend employed as active layers in, respectively, organic field-effect transistors (OFETs) photovoltaics (OPVs). The crystallinity, morphology, OFET characteristics PCBM thin were significantly influenced by to solvent, especially select alcohols. Control over nanoscale morphology film, achieved via exposure, yielded highly...
We demonstrate the origin and mechanism of hysteresis behavior that is frequently observed during operation organic field-effect transistors (OFETs) based on polymer gate dielectrics. Although polar functionalities, such as hydroxyl groups, present in dielectrics are known to induce hysteresis, there have only been a few detailed investigations examining how presence end functionalities both at surface—forming an interface with semiconductor layer—and bulk influences hysteresis. In this...
Abstract A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing a strategy for improving the OFET performance and stability is reported. The thermally‐treated N , N′ ‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using COC/SiO 2 show remarkably enhanced atmospheric stability. COC layer displays hydrophobic surface (water contact angle = 95° ± 1°) high (glass...
Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) great potential use in hybrid complementary load because the low cost their fabrication process natural abundance active materials. The integration a single TFT into an inverter requires development simple patterning method alternative to...
We present herein the first report of organic/inorganic hybrid thin-film encapsulation (TFE) developed as an process for mass production in display industry. The proposed method was applied to fabricate a top-emitting organic light-emitting device (TEOLED). TFE has 1.5 dyad structure and fabricated using plasma-enhanced atomic layer deposition (PEALD) inkjet printing (IJP) processes that can be operations Currently, industries use inorganic thin films such SiNx SiOxNy through chemical vapor...
The ZnO/SnO<sub>2</sub> bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.
Encapsulation is essential for protecting the air-sensitive components of organic light-emitting diodes (OLEDs), such as active layers and cathode electrodes. Thin film encapsulation approaches based on an oxide layer are suitable flexible electronics, including OLEDs, because they provide mechanical flexibility, thin, easy to prepare. This study examined effects ratio water permeation barrier properties Al2O3/TiO2 nanolaminate films prepared by plasma-enhanced atomic deposition. We found...
Abstract A novel fluorinated organic–inorganic (O–I) hybrid sol—gel based material, named FAGPTi, is successfully synthesized and applied as a gate dielectric in flexible organic thin‐film transistors (OTFTs). The previously reported three‐arm‐shaped alkoxysilane‐functionalized amphiphilic polymer yields stable O–I material consisting of uniformly dispersed nanoparticles the sol‐state. Here, precursor introduced into system, making it possible to realize more spherical composites. This...
Here we describe the use of photocurable poly(vinyl cinnamate) (PVCN) as a gate dielectric in high-performance cylindrical organic field-effect transistors (OFETs) with high bending stability. A smooth-surface metallic fiber (Al wire) was employed substrate, and polymer dielectrics (PVCN poly(4-vinyl phenol) (PVP)) were formed viadip-coating. The PVCN PVP deposited on Al wire respectively cross-linked via UV irradiation thermal heating found to be very smooth uniform over entire coated area....
Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as field-effect transistors (OFETs), because it is highly conductive and provides good oxidation thermal stability properties. However, still remains a challenge to demonstrate complementary circuits using electrodes of the relatively poor performance n-type OFETs. Here, we report development high-performance inverters source/drain N,...
Colloidal quantum dots (QDs) are emerging as solution-processable, high-performance materials for light-emitting diodes (LEDs). Understanding the failure mechanism(s) is of both fundamental and practical importance, yet little known how QD-LEDs fail. Here, we have carried out accelerated device lifetime measurements on double heterojunction nanorod- (DHNR) QD-LEDs. A common dependence initial driving voltage observed over more than two orders magnitude range in luminance. This behavior...
The receptor material (OA-GO)/polymeric semiconductor (F8T2) structure is newly introduced to active layer of OFET gas sensors and demonstrated have better sensing ability than a comparable device with polymer-only layer.
In this letter, high-performance InZnO/AlSnZnInO (IZO/ATZIO) bilayer thin-film transistors (TFTs) with an inverted staggered back channel etch structure are presented. The width and the length were both 6 μm, which is small enough to be adapted a high-resolution display backplane. High field-effect mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> ) over 60 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs was...
p-type thin-film transistors (pTFTs) have proven to be a significant impediment advancing electronics beyond traditional Si-based technology. A recent study suggests that thin and highly crystalline Te layer shows promise as channel for high-performance pTFTs. However, achieving this still requires specific conditions, such cryogenic growth temperature an extremely thickness on the order of few nanometers. These conditions critically limit practical feasibility fabrication process. Here, we...
The influence of hydroxyl groups on the hysteresis pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. electrical characteristics Fourier transform infrared spectroscopy measurements show that is intimately related to presence free OH in polymer dielectrics. methyl methacryl moieties PVP-PMMA minimize residual water form hydrogen bonds with groups, thus...