Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due their brittle nature. Because of this drawback, mostly been placed on non-stretchable parts avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, strain entire system. Integration density must therefore be sacrificed when stretchability is first priority...

Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent film transistors. However, the nature of process to fabricate these causes most highly conductive, making them unsuitable materials. We overcame this hurdle by forming stoichiometric ultra-thin (5 nm) In2O3 using a thermal atomic layer deposition method. Specifically, (3-(dimethylamino)propyl)dimethylindium was liquid precursor and ozone an oxygen source grow at high growth rate 0.06...

Bending characteristics of flexible oxide thin-film transistors could be enhanced by optimizing the barrier layers on polyethylene naphthalate substrate.

We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer thin-film transistors (TFTs). The field-effect mobility of 53.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s, threshold voltage 0.5 V, and subthreshold swing 0.15 V/decade were obtained with a thin IZO-inserted TFT. positive bias stability was improved an channel. fabricated 13-stage ring oscillators, which exhibited oscillating frequency 296...

In this letter, high-performance InZnO/AlSnZnInO (IZO/ATZIO) bilayer thin-film transistors (TFTs) with an inverted staggered back channel etch structure are presented. The width and the length were both 6 μm, which is small enough to be adapted a high-resolution display backplane. High field-effect mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> ) over 60 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs was...

In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing morphology consisting of matrix polymer/localized acceptor but also stabilize trapped electron states such photomultiplication mechanism be accelerated further, leading exceptionally high external quantum efficiency (EQE). The consequent semitransparent OPD molybdenum oxide...

Rewritable full-color computer-generated holograms containing phase-change materials are reported.

In this paper, we introduce a transparent fingerprint sensing system using thin film transistor (TFT) sensor panel, based on self-capacitive scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT array and associated custom Read-Out IC (ROIC) are implemented for the system. The panel has 200 × pixel each size is as small 50 μm μm. ROIC uses only eight analog front-end (AFE) amplifier stages along with successive approximation analog-to-digital converter (SAR ADC). To get image data from...

The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously high power consumption because the TFT often has negative threshold voltage. In order resolve this problem, we have invented a new circuit in which most TFTs are turned off with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> and no zero is located between low supply voltages. As result, could maintain within six times normal value spite voltage TFT.

A novel method is proposed for simulating free space field propagation from a source plane to destination that applicable both small and large distances. The angular spectrum (ASM) was widely used near propagation, but it caused numerical error when the distance because of aliasing due under sampling. Band limited ASM satisfied Nyquist condition on sampling by limiting bandwidth avoid an so could extend ASM. However, band also made decrease effective number in Fourier large. In wide range...

Abstract A new pixel structure for the realization of a 1‐μm‐pixel‐pitch display was developed. This structure, named vertically stacked thin‐film transistor (VST), based on conventional back‐channel etched (TFT), but all layers except horizontal gate line were embedded data line, enabling implementation high‐resolution panels. The VST device with channel length 1 μm showed high field effect mobility more than 50 cm 2 /Vs and low subthreshold slope 78 mV per decade. It also shows uniform...

Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up 220% elongation and no significant change resistance. In Al-only electrodes, Al penetrates into the polyimide (PI) because of its high chemical reactivity PI. This issue can overcome by inserting Mo underneath layer, blocking reaction between PI enabling formation robust...

In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V·s and an excellent photoresponsivity 25 000 A/W, photosensitivity 3.3 × 107, specific detectivity 4.3 1017 cm·Hz1/2·W−1 under illumination at 460 nm with intensity 140 μW/cm2. The persistent photoconductivity inherent in made oxide semiconductors overcome by pulsed gate bias 1 μs, which accelerates recombination...

We report the effect of a rapid thermal annealing process (RTP) on electrical properties an aluminum‐doped indium zinc tin oxide (Al‐IZTO) thin film transistor (TFT) with back‐channel etched (BCE) structure. First, RTP temperatures were varied from 250 to 350 °C, and their Al‐IZTO TFT was investigated. The °C produced best transfer characteristics (subthreshold swing = 0.11 V/dec, hysteresis −0.25 V, mobility 26.42 cm 2 V −1 s ), as temperature increased, TFTs showed slightly degraded in...

In this paper, a new light-adaptable display (LAD) structure with minimum power consumption is proposed for the future advertising service, and demonstrated results are reported. An organic light-emitting diode color reflection (colored OLED) was applied reflective- emissive-mode device, guest-host liquid-crystal device (GH-LC) adopted light shutter device. The current efficiency reflectance of colored OLED were 35.15 cd/A at 457 cd/m2 luminance 63% yellow color, respectively. measured...

Multilayered ZnO-SnO2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped oxides target, and their structural field effect electronic transport properties investigated as a function the thickness ZnO SnO2 layers. The have an amorphous multilayered composed periodic stacking film transistors (TFTs) are highly dependent on highest electron mobility 37 cm2/V s, low subthreshold swing 0.19 V/decade, threshold voltage 0.13 V, high drain current on-to-off ratio ∼1010...

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as promising alternative for the p-type oxide thin film transistor (TFT) and an n-type TFT is presented ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting device shows distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, exceedingly high gain. As service to our authors readers, this journal...

In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with very narrow channel length, 1 μm, are presented. To cover the steep slope at dry-etched gate pattern edge a thin insulator, triangular-shaped spacer was introduced. A 1-μm short-channel TFT is particularly adaptable to next-generation display applications requiring high resolution. The field-effect mobility (μFE), subthreshold slope, turn-on voltage (V <sub...