Minji Park

ORCID: 0000-0001-5590-163X
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Research Areas
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Radioactive element chemistry and processing
  • ZnO doping and properties
  • Advanced Memory and Neural Computing
  • Extraction and Separation Processes
  • Nuclear materials and radiation effects
  • Graphene research and applications
  • Chemical Synthesis and Characterization
  • Advanced Sensor and Energy Harvesting Materials
  • Silicon Nanostructures and Photoluminescence
  • Adsorption and biosorption for pollutant removal
  • Biosensors and Analytical Detection
  • Nanowire Synthesis and Applications
  • Advanced biosensing and bioanalysis techniques
  • Advanced Materials and Mechanics
  • Conducting polymers and applications
  • Environmental remediation with nanomaterials
  • bioluminescence and chemiluminescence research
  • Perovskite Materials and Applications
  • Rheology and Fluid Dynamics Studies
  • Chromium effects and bioremediation
  • Chalcogenide Semiconductor Thin Films
  • Wildlife-Road Interactions and Conservation
  • Micro and Nano Robotics

Chungnam National University
2024

Korea Institute of Science and Technology
2018-2024

Pusan National University
2016-2024

Korea Research Institute of Standards and Science
2023

Ewha Womans University
2022

Dong-A University
2019-2021

Pohang University of Science and Technology
2021

Korea Electrotechnology Research Institute
2021

Kyung Hee University
2014-2019

Dongduk Women's University
2018

Bending characteristics of flexible oxide thin-film transistors could be enhanced by optimizing the barrier layers on polyethylene naphthalate substrate.

10.1039/c5tc00048c article EN Journal of Materials Chemistry C 2015-01-01

We investigated the relationship between defects in graphene and NO2 gas sensitivity of graphene-based sensors. Defects were introduced by hydrogen plasma or ultraviolet (UV)/ozone treatment. As defect concentration increased, was enhanced, sub-ppb level detection limit achieved. UV irradiation used for recovery at room temperature. However, generated ozone treatment, like oxide, reduced back to irradiation, so ozone-treated sensor not stable over time. In contrast, response hydrogenated...

10.1063/1.4999263 article EN Applied Physics Letters 2017-11-20

We fabricated devices consisting of single and double graphene sheets embedded in organic polymer layers. These had binary ternary nonvolatile resistive switching behaviors, respectively. Capacitance–voltage (C–V) curves scanning capacitance microscopy (SCM) images were obtained to investigate the mechanism. The C–V exhibited a large hysteresis, implying that acted as charging discharging layers was caused by charges trapped In addition, capacitive behaviors observed for device with sheet,...

10.1021/acsami.6b01962 article EN ACS Applied Materials & Interfaces 2016-05-21

A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the fabrication process temperature suppressed below 180 °C. To improve surface roughness water vapor transmission rate of PEN substrate, organic/inorganic hybrid barrier layer introduced. The gate-stack composed all oxide layers, such as In-Ga-Zn-O active channel, ZnO charge-trap layer, Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ted.2016.2531087 article EN IEEE Transactions on Electron Devices 2016-02-29

Abstract This study proposes a novel and highly secure encryption technology based on plasmonic‐enhanced upconversion luminescence (UCL). The can be realized by disordered plasmonic nanostructure composed of transferred metal nanoparticle–UC nanocrystals (UCNC)–metal (tMUM) film using the graphene transfer process, in which nanoparticles that formed layer are Scotch tape. tMUM strongly enhances UCL factor 200 mainly because excitation gap plasmon polaritons. Meanwhile, UCNCs direct contact...

10.1002/adfm.201800369 article EN Advanced Functional Materials 2018-04-14

A simple and portable colorimetric sensor based on M13 bacteriophage (phage) was devised to identify a class of endocrine disrupting chemicals, including benzene, phthalate, chlorobenzene derivatives. Arrays structurally genetically modified were fabricated so as produce biomimetic sensor, color changes in the phage arrays response several benzene derivatives characterized. The also used classify phthalate representatives chemicals. characteristic patterns obtained exposure various enabled...

10.1002/asia.201601079 article EN Chemistry - An Asian Journal 2016-09-12

We fabricated fully transparent top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) while varying the oxygen partial pressure (PO2) during IGZO sputtering deposition and characterized negative-bias-illumination stress (NBIS) stabilities of these devices before after a post-annealing process. When PO2 was chosen to be 2% device annealed in ambient conditions at 200 °C, field-effect mobility saturation region, subthreshold swing, on/off current ratio were obtained approximately 15.3 cm2...

10.1063/1.4938013 article EN Journal of Applied Physics 2015-12-17

Hardware security is not a new problem but ever-growing in consumer and medical domains owing to hyperconnectivity. A physical unclonable function (PUF) offers promising hardware solution for cryptographic key generation, identification, authentication. However, electrical PUFs using nanomaterials or two-dimensional (2D) transition metal dichalcogenides (TMDCs) often have limited entropy parameter space sources, both of which increase the vulnerability attacks act as bottlenecks practical...

10.1021/acsnano.3c10308 article EN cc-by-nc-nd ACS Nano 2023-12-20

Abstract Molybdenum disulfide has been intensively studied as a promising material for photodetector applications because of its excellent electrical and optical properties. We report multilayer MoS 2 film attached with plasmonic tape near-infrared (NIR) detection. flakes are chemically exfoliated transferred onto polymer substrate, silver nanoparticles (AgNPs) dewetted thermally on substrate Scotch tape. The AgNPs is directly simply the flakes. Consequently, NIR photoresponse device...

10.1038/s41598-020-68127-7 article EN cc-by Scientific Reports 2020-07-09

Engineering, Procurement, and Construction (EPC) projects span the entire cycle of industrial plants, from bidding to engineering, construction, start-up operation maintenance. Most EPC contractors do not have systematic decision-making tools when for project; therefore, they rely on manual analysis experience in evaluating contract documents, including technical specifications. Oftentimes, miss or underestimate presence risk clauses severity, potentially create with a low bid price tight...

10.3390/en14185901 article EN cc-by Energies 2021-09-17

We present a combined simulation and experimental study of the structure dynamics dilute, semidilute, concentrated graphene oxide aqueous alkaline dispersions. These materials behave as lyotropic systems, with phase ordering concentration increases. The sheet spacing in ordered phases is much broader than that expected by classical Derjaguin–Landau–Verwey–Overbeek theory. Rheological responses isotropic are similar to rod-like liquid crystals (LCs), which follow simplified Leslie–Ericksen...

10.1122/8.0000260 article EN Journal of Rheology 2021-07-06

In our earlier work [Lee et al., Soft Matter 15, 4238–4243 (2019)], we demonstrated that mutually attractive graphene oxide (GO) domains were under a tube-rolling motion with vorticity alignment at low shear rates. this work, prepared repulsive GO domains, which dispersed in water. The distinct stress wave-prints measured using cone and plate rheometer All possible Jeffery orbits calculated for input into the Leslie–Ericksen theory. Tikhonov regularization method was used to determine...

10.1122/1.5120323 article EN Journal of Rheology 2019-11-15

The poly(ethylene naphthalate) (PEN) substrates have two sides of bare PEN and primer-coated surfaces treated to provide slip property for film production. Although the primer surface showed porous inhomogeneous morphologies, a hybrid inorganic/organic double-layered barrier layer can effectively improve roughness permeability. fabricated amorphous In-Ga-Zn-O thin-film transistors on with good performances did not experience any degradation under mechanical bending situation at curvature...

10.1116/1.4929414 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2015-08-25

Channel composition effect on the device stabilities of In-Zn-O (IZO) and Al-In-Zn-O (AIZO) thin-film transistors (TFTs) were investigated under negative gate bias illumination stress (NBIS) conditions. The fabricated TFTs with a top-gate bottom-contact structure did not show any marked shifts threshold voltage (ΔVth) positive for 104 s thanks to self-passivation effect. While channel was negligible conditions without illumination, there distinct variations in NBIS instabilities AIZO various...

10.1149/2.002409jss article EN ECS Journal of Solid State Science and Technology 2014-01-01

We introduce mechanically flexible nonvolatile memory thin-film transistors (MTFTs) for future highly functional and stretchable electronic devices systems. The proposed are uniquely composed of oxide-semiconductor thin films operated with charge-trap detrap mechanisms operations. Charge-trap-assisted MTFTs (CT-MTFTs) using In–Ga–Zn–O active ZnO layers designed fabricated on poly(ethylene naphthalate) colorless polyimide prepared carrier glass substrates. describe the fabrication processes...

10.7567/1347-4065/ab09e4 article EN Japanese Journal of Applied Physics 2019-02-25

We propose a methodology for the formation of silver (Ag) nanoparticle monolayer as charge trapping layer nonvolatile memory thin-film transistor using an indium-gallium-zinc oxide semiconductor channel layer. Atomic-layer-deposited Al2O3-amine treatment Ag configuration were employed tunneling/charge-trap layers, respectively. The devices showed wide window 8.0 V, when gate voltage was swept from −20 to 20 V. high on/off current ratios 5.81 × 105 and 1.29 103 could be obtained device,...

10.1149/2.0161701jss article EN ECS Journal of Solid State Science and Technology 2016-12-22
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