A5091818577- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Thin-Film Transistor Technologies
- ZnO doping and properties
- High-Temperature Coating Behaviors
- Hydrogen embrittlement and corrosion behaviors in metals
- Catalytic Processes in Materials Science
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Transition Metal Oxide Nanomaterials
- Advancements in Photolithography Techniques
- Icing and De-icing Technologies
- Corrosion Behavior and Inhibition
- Engineering Applied Research
- Silicon Nanostructures and Photoluminescence
- Extraction and Separation Processes
- Organic Electronics and Photovoltaics
- Surface Modification and Superhydrophobicity
- Advancements in Battery Materials
- High voltage insulation and dielectric phenomena
- Photopolymerization techniques and applications
- GaN-based semiconductor devices and materials
The University of Texas at Dallas
2019-2025
Korea Electric Power Corporation (South Korea)
2009-2022
Hanyang University
2014-2022
Inha University
2022
Kangwon National University
2022
Dow Chemical (United States)
2022
Anyang University
2014-2022
Brookhaven National Laboratory
2022
Korea Institute of Materials Science
2017
Chungnam National University
2015
Herein, Ag-ZnO core-shell nanoparticles (NPs) with enhanced photocatalytic activity were prepared by coating Ag metal cores ZnO semiconductor shells through atomic layer deposition (ALD). Instrumental analysis revealed that the ultra-thin and conformal nature of shell allowed NPs to simultaneously exploit properties plasmonic Ag. In a rhodamine B photodegradation test performed under artificial sunlight, exhibited better performance than other photocatalysts, namely ALD-ZnO coated NPs. The...
The Y<sub>2</sub>O<sub>3</sub> films grown with a new and heteroleptic liquid Y precursor, (iPrCp)<sub>2</sub>Y(iPr-amd), have been investigated chemical properties of atomic layer deposition process, material characterization the deposited film its non-volatile resistive switching behaviour.
Since the first report on unexpected ferroelectricity of fluorite‐structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based theoretical calculations experimental demonstrations, it is now well known that ferroelectrics are compatible with complementary metal–oxide–semiconductor technology exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted noncentrosymmetric orthorhombic phase, which responsible...
Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance capacitance states in ferroelectric HZO proposed vector-matrix multiplication (VMM), but previous suffer from limited accuracy reliability. In this work, we propose a promising approach centered on the remanent polarization (Pr) switching of binary capacitor...
This study investigates the impact of dopants on Hf1-xZrxO2-based capacitors for high-performance, hysteresis-free dielectric applications. Control crystalline structure Hf1-xZrxO2 films is crucial achieving superior properties. The tetragonal (t) phase exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high constant (κ). However, hysteresis behavior in polarization-voltage sweeps AFE presents a significant challenge, primarily energy loss when implemented dynamic...
This work comprehensively investigates the thermal budget required to simultaneously achieve low-temperature process conditions and high endurance in atomic layer deposited ferroelectric Hf0.5Zr0.5O2 (HZO) thin films. Because a certain level of is ferroelectricity 10 nm HZO films, crystallization temperature can be lowered below 400 °C by simply increasing annealing time. In addition, analysis behavior films based on Johnson–Mehl–Avrami–Kolmogorov model revealed that longer times are lower...
The discovery of ferroelectricity in HfO2-based materials 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal budget process. Based on experiment demonstrations over the past 10 years, well known that HZO show excellent when sandwiched between TiN top bottom electrodes. This work reports comprehensive study effect...
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due their promising properties and opportunities. To achieve such at low temperatures (below 400 °C), stabilizing metastable noncentrosymmetric orthorhombic phase is crucial. This review provides comprehensive overview atomic layer deposition (ALD) techniques for obtaining low-temperature applications. We discuss...
In this paper, we investigate the polarization retention of Hf0.5Zr0.5O2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling ferroelectric (FE) layer thickness from 5 nm to 20 nm. The have a constant interface capacitance ∼24 μF/cm2, developed due integration HZO on degenerated Si as bottom conducting electrode. It is observed that films show small change (∼5%) in FE (PFE) between short (10 μs) and long (6 s) time, while 5-nm-thick exhibit large difference (∼90%)....
In this Letter, a high-pressure annealing (HPA) process is proposed as way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget essential for integrating devices in back-end-of-line provide more functionalities and effective memory area. For HZO film annealed at 300 °C using HPA process, an orthorhombic phase responsible behavior was formed decrease thickness, resulting remanent polarization (Pr) ∼13 μC/cm2 (i.e., 2Pr ∼26 μC/cm2)....
Low-temperature annealing of Zinc oxide (ZnO) films as electron transport layers for inverted polymer solar cells was investigated. A wrinkled morphology the ZnO film has previously been mostly observed after dynamic (DA). In this study, we investigated effect static (SA) deposited by sol–gel method at 25 °C, 150 and 200 °C 10 min in air. We formation wrinkle structures on surface sample annealed while flat were formed °C. Here, a variable ramping/heating rate provided process resulted...
The ferroelectricity of metal–ferroelectric–metal capacitors with a ferroelectric HfxZr1−xO2/ZrO2 (HZO/ZO) bilayer thicker than 20 nm formed by atomic layer deposition and postdeposition annealing at 600 °C was investigated. HZO/ZO exhibited higher remanent polarization (2Pr = Pr+ − Pr−) breakdown voltage (Vbd) HfxZr1−xO2 (HZO) single layer. In particular, HZO (15 nm)/ZO(10 nm) (HZ15Z10) capacitor excellent Vbd 2Pr values 6.7 V 14 μC/cm2, respectively, which are much those (4.3 10...
Abstract Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction photolithography wavelength, traditional spin-on resists still support fabrication of most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) ( λ = 13.5 nm). However, trade-off between resolution, sensitivity, roughness conventional pose a critical challenge race towards device downscaling to 1 node. While great efforts are being...
Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The deposited trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides higher growth per cycle (GPC), which is approximately 2.3 times at 300 °C and, also exhibits low impurity concentration as-deposited films. Low AlN 225 with capping...
The change in the interplanar spacing (d-spacing) including ferroelectric orthorhombic (O) phase low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. 10-nm-thick HZO were by thermal and plasma-enhanced atomic layer deposition (TH- PE-ALD) methods H2O gas O2 plasma as oxidants, respectively, a post-metallization annealing (PMA) performed at 300–400 °C. d-spacing of mixture (111)-, (101)-, (111)-planes O,...
In this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf0.5Zr0.5O2 (HZO) films are investigated. We demonstrate that lower crystallization temperature HZO originates from a densified film deposition with an anhydrous H2O2 oxidant in atomic layer process. As consequence densification, H2O2-based showed completely crystallinity fewer defects at annealing 350 °C. This reduction additionally suppresses oxidation TiN electrodes, thereby improving device reliability. The...
Ferroelectricity in Hf0.5Zr0.5O2 (HZO) has garnered increasing interest due to its potential applications neuromorphic and nonvolatile memory devices. However, with time, the adverse shift coercive voltage (Vc) observed a prepoled HZO ferroelectric capacitor can lead insufficient polarization switching from one polarity owing development of built-in voltage, causing reliability concerns. Another consequence developed is relaxation, that is, rapid loss stored time (t < 6 s). In this work,...
We studied the ferroelectricity of metal–ferroelectric–metal capacitors with a Hf x Zr 1−x O 2 (10 nm) (HZO) single layer, and nm)/ZrO (HZO/ZO) nm)/HfO (HZO/HO) bi-layers. HZO/ZO HZO exhibited high remanent polarization (2 P r = + − ) 13 12 µC/cm , respectively, compared to HZO/HO (0.5 after 10 4 wake-up cycles. This is due difference amount ferroelectric orthorhombic phase. found that breakdown voltage was approximately 1.5 times higher than while maintaining value. Moreover, kept 1.4 value...
Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having high growth rate at low temperature (<300 °C) using plasma enhanced ALD process.