Herein, Ag-ZnO core-shell nanoparticles (NPs) with enhanced photocatalytic activity were prepared by coating Ag metal cores ZnO semiconductor shells through atomic layer deposition (ALD). Instrumental analysis revealed that the ultra-thin and conformal nature of shell allowed NPs to simultaneously exploit properties plasmonic Ag. In a rhodamine B photodegradation test performed under artificial sunlight, exhibited better performance than other photocatalysts, namely ALD-ZnO coated NPs. The...

The Y₂O₃ films grown with a new and heteroleptic liquid Y precursor, (iPrCp)₂Y(iPr-amd), have been investigated chemical properties of atomic layer deposition process, material characterization the deposited film its non-volatile resistive switching behaviour.

Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range 250 °C to 350 °C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive behaviors. behaviors are related chemical bonding states films. As film increases, becomes much stoichiometric and little contaminated impurities. Moreover, resistance ratio high state low increases at over 300

The interfacial layer between oxide and semiconductor in metal-oxide-semiconductor (MOS) capacitors depends on the metal electrode material. metal/HfO2/Si metal/HfO2/Ge capacitor were made using an atomic deposited HfO2 dielectric films Mo, Ru, Pt electrodes above Si substrate Ti, Ge substrate. measured saturation capacitance was varied with evaluated to equivalent thickness (CET). In Si-based MOS capacitor, CET value of is larger than those Mo Ru electrode. addition, 27.4 A, 38.2 30.8 A for...

Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal-oxide-semiconductor field-effect transistors (MOSFETs). The growth HfOx from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. atomic layer deposition (ALD) conditions were optimized, and chemical state, surface morphology, microstructure prepared characterized. Furthermore, to better understand effects LNS on process,...

The charge trapping properties of metal-HfO2-Ge capacitor as a nonvolatile memory have been investigated with (NH4)2S-treated Ge substrate and atomic-layer-deposited HfO2 layer. interfacial layer generated by reveals trace -S- bonding, very sharp interface edges, smooth surface morphology. Ru-HfO2-Ge shows an enhanced state little frequency dispersion, lower leakage current, reliable the endurance retention than cyclic-cleaned substrate.

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction the GeOx interfacial layer (IL) between HfO2 dielectric Ge substrate in metal/HfO2/GeOx/Ge capacitors. All capacitors were fabricated using same process except material used electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, energy loss spectroscopy conducted to confirm IL. Interestingly, these metals are observed remotely scavenge layer, reducing...

An in-situ monitoring system equipped with both fourier transform infrared (FT-IR) spectroscopy and quadrupole mass (QMS) was introduced measured the decomposition of Zr(NCH 3 C 2 H 5 ) 4 precursor, which usually used in ALD ZrO films. For actual influence state metalorganic precursor on properties produced film, heated temperature ranges from 100 °C to 200 by step 25 °C. As a decomposed reference, acquisition FT-IR QMS data at 500 compared those lower temperature. The increase IR peak 2962...

To prevent ablation caused by sudden hydrogen eruption during crystallization of hydrogenated amorphous Si (a-Si:H) thin films, a wide dehydrogenation thermal annealing (wDTA) system was developed to reduce content in a-Si:H film prior its process. The annealed films were fully dehydrogenated and nanocrystallized the wDTA system. Raman scattering measurement revealed that process lowers through disappearance peak intensity at 2000 cm−1. transformed into with lower residual stress. major...

Nanocrystalline HfOx films were synthesized by an atomic layer deposition method using Hf[N(CH3)C2H5]4 as the metal precursor and La(NO3)3·6H2O solution oxidant. played role of both oxidant catalyst, catalytic oxidant, where La element in deposited was under detection limit. The introduction instead H2O effectively altered surface roughness, crystalline status, resistive switching properties films. Although structures made with monoclinic, roughness film grown is smoother than that H2O....

ZrO 2 have been widely used as dielectric layers in metal–insulator–metal and metal-oxide-semiconductor capacitors, charge trapping non-volatile flash memory devices, insulating resistive switching devices owing to their high constant good property. For application the aforementioned semiconductor films prepared on or metal substrate by an atomic layer deposition (ALD) method. In ALD process, film grows through a unique surface reaction between vaporized precursor reactant, since both...

Resistive random access memory (RRAM) which has simple structure of metal-insulator-metal (MIM) resistor been focused as a promising device to be applied for due its non-volatile characteristics and low power consumption. Especially, ZnO films have emerged applications transparent or semi-transparent devices in the range visible light, owing their wide band gap (3.3 eV) high transmittance. The with insulator shows low-operation reset set voltage below ±2 V. However, crystallinity, conduction...