A5006032529- Microstructure and mechanical properties
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Fatigue and fracture mechanics
- GaN-based semiconductor devices and materials
- Ferroelectric and Piezoelectric Materials
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Microstructure and Mechanical Properties of Steels
- nanoparticles nucleation surface interactions
- Theoretical and Computational Physics
- Metal and Thin Film Mechanics
- Advanced Materials Characterization Techniques
- Advanced ceramic materials synthesis
- Silicon and Solar Cell Technologies
- High Temperature Alloys and Creep
- Advanced Electron Microscopy Techniques and Applications
- Material Dynamics and Properties
- Advancements in Solid Oxide Fuel Cells
- Metallurgy and Material Forming
- Force Microscopy Techniques and Applications
- Physics of Superconductivity and Magnetism
Seoul National University
2015-2024
Knowles (United States)
2004-2024
Materials Science & Engineering
2023
Seoul Institute
2019
Korea Maritime and Ocean University
2019
Government of the Republic of Korea
2019
Korea University of Technology and Education
2015
New Generation University College
2014
Korea Advanced Institute of Science and Technology
1991-2012
ILJIN Group (South Korea)
2011-2012
Whereas prototypical Al(2)O(3) is not a glass former, amorphous can be formed as thin films through vapor deposition and serve structural model for the glass. The first two-dimensional solid-state NMR experiments film reveal that four- five-coordinated species are predominant (95%), while six-coordinated minor. Such distribution remarkably similar to what has been predicted theoretically melts. Upon annealing 800 degrees C becomes negligible, indicating onset of crystallization Al(2)O(3).
We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features the wave functions at energy levels, such as a localized defect state, are clearly exhibited in atomically resolved spectroscopy. The peaks Van Hove singularity on each side penetrate and decay into opposite across junction over distance $\ensuremath{\sim}2\text{ }\text{ }\mathrm{n}\mathrm{m}$. These experimental accounted for, help tight-binding...
To identify hematoma progression in patients with warfarin-associated intracerebral hemorrhage (ICH) despite international normalized ratio (INR) normalization fresh-frozen plasma (FFP), we reviewed 45 ICH given FFP. The median time for door to INR was 30 hours (14 49.5), 4 patients' hematomas enlarging after normalization. FFP is associated substantial delay actual administration and pulmonary edema may not prevent of
The synthesis and densification of fairly dense nanocrystalline SrTiO 3 its characterization are described in this paper detail. Significant grain growth was avoided by the application a two‐stage sintering process using hot pressing. High‐resolution transmission electron microscopy energy loss spectroscopy characterizations indicate pure material with no detectable chemical inhomogeneities. electrical measurements disappearance bulk contribution to conduction due overlap depleted space...
In this study, electron-beam irradiation of a MgAl
This study examined the effect of adding SrO on grain-boundary conduction (gadolinia-doped ceria) containing . The apparent resistivity at decreased drastically from upon doping with SrO, while grain-interior increased gradually as concentration was up to Therefore, resulted in minimum total resistivity. electron probe X-ray microanalysis and analysis lattice parameters suggest that 140–500-fold enhancement is attributed scavenging highly resistive siliceous phase by SrO-containing phase.
This study examined the effect of addition on grain-boundary conductivity in -doped containing as an impurity. The increased times without affecting grain-interior significantly. was incorporated into lattice completely, which means that a scavenging reaction between large -related second phase and siliceous impurity not reason for conductivity. After adding , grain boundary structure changed from random to faceted. Configuration change segregation relation boundary-structure variation is...
A correlation between a grain-boundary structural transition and change in electrical properties is demonstrated, using SrTiO3 bicrystalline grain boundary as model system. faceting–defaceting seen 1500 1600 °C (the of the bicrystal annealed at for one day shown figure) accompanied by an abrupt impedance.
The microstructure of an undoped GaN grown on a hemisphere-patterned sapphire substrate is characterized by transmission electron microscopy. Interestingly, basal-plane stacking faults are formed in at the height hemispheres, leading to substantial reduction threading-dislocation density. It believed that formation characteristic lateral growth mode. This study looks unexplored feature behavior both so-called epitaxial overgrowth mechanism and function reduce dislocation density for substrates.
The effect of growth temperature on the atomic layer deposition zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. chemical, structural, and electrical properties ZrO2 grown at temperatures from 250 to 350 °C characterized. Stoichiometric formed 250–350 an ratio O Zr 1.8–1.9 low content carbon impurities. film 300 predominantly tetragonal crystalline phase, whereas mixture monoclinic phases. Electrical...