We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown silicon substrate. The metal contacts were formed by depositing Al source/drain contact and Au gate contact, respectively. Fabricated SB-MOSFET exhibited threshold voltage of 1.65 V, maximum transconductance(g/sub m/) 1.6 mS/mm at V/sub DS/=5V, which belongs to one highest value in MOSFET. drain current was higher than 3 mA/mm off-state as low nA/mm.

Nickel silicide (NiSi) was formed by annealing a uniform low-resistivity nickel (Ni) film deposited atomic layer deposition (ALD). A Ni as-deposited at 220 °C exhibited the lowest sheet resistance of 18 Ω/sq. comparable to that obtained physical vapor deposition, even though it contained significant amount carbon from metalorganic precursor. It is believed uniformly distributed in partly forming weak Ni3C phase which eliminates other crystalline defects and hence lowers film. However, not...

The UV-to-visible rejection ratio is one of the important figure merits GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication GaN devices, we tried to grow a epitaxial layer on silicon substrate with complicated buffer layers for stress-release. It known that structure affects performance devices fabricated layers. In this study, show design can make effect photodetector GaN-on-silicon step-graded AlxGa-xN has highly-selective photoresponse at 365-nm wavelength....

We have proposed and fabricated a lateral type polysilicon field emission triode using conventional photolithography LOCOS (local oxidation of polysilicon) in direction. The techniques employed this study are very simple allow for good reproducibility both shaping sharp electrode tips controlling the short cathode-to-gate inter-electrode distance. devices exhibit excellent electrical characteristics such as low turn-on voltage 14 V at V/sub GC/=0 V, stable high anode current (I/sub A/) /spl...

We proposed and fabricated a metal-insulator-semiconductor-insulator-metal type dual-wavelength sensitive UV sensor by using an AlGaN/GaN hetero-structure layer epitaxially grown on sapphire substrate thin Al2O3 inserted between AlGaN Ni Schottky electrodes to reduce dark current improve the UV/visible rejection ratio. The shows high photo-responsive both wavelength regimes with significantly improved ratio under regime of GaN-related response. Cut-off wavelengths can be controlled changing...

We fabricated a GaN-based metal–semiconductor–metal (MSM)-type UV sensor using multilayer graphene as transparent Schottky electrodes. The GaN MSM showed high photo-to-dark current contrast ratio of 3.9 × 105 and UV-to-visible rejection 1.8 103 at 7 V. as-fabricated with electrodes has low bias dependence maximum photoresponsivity noise-like response visible wavelength in the 500 nm region. These problems were successfully solved by treatment buffered oxide etcher (BOE), photoresponse...

The effect of growth temperature on the atomic layer deposition zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. chemical, structural, and electrical properties ZrO2 grown at temperatures from 250 to 350 °C characterized. Stoichiometric formed 250–350 an ratio O Zr 1.8–1.9 low content carbon impurities. film 300 predominantly tetragonal crystalline phase, whereas mixture monoclinic phases. Electrical...

We firstly deposit a Ni film, directly after removing the native oxide, by atomic layer deposition (ALD) using N2-hydroxyhexafluoroisopropyl-N1 (Bis-Ni) precursor, H2 as reactant gas and Ar purging at 220 °C rate of 1.25 Å/cycle. The as-deposited Ni3C films exhibited sheet resistances 5 Ω/□ (sample B) 18 A), respectively. formation phase was easily controlled varying flow above gas. A rapid thermal process (RTP) then performed in nitrogen ambient to form NiSi different temperatures from 400...

The fabrication of a single pixel sensor, which is fundamental element device for the an array-type requires integration technique photodetector and transistor on wafer. In conventional GaN-based ultraviolet (UV) imaging devices, hybrid-type process typically utilized, involves backside substrate etching wafer-to-wafer bonding process. this work, we developed UV passive sensor (PPS) by integrating GaN metal-semiconductor-metal (MSM) Schottky-barrier (SB) metal-oxide-semiconductor...

The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was investigated using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal space map. electron mobility measured at 300 (150) K a measurement significantly increased from 170 (185) cm2/V s the undoped sample to 524 (744) Al-doped with molar flow rate ratio Al/(Al+Ga) 0.056. When increasing incorporation GaN, band edge emission intensity enhanced about one order magnitude compared GaN....

We present the electrical characteristics of an AlGaN/GaN/p-GaN heterostructure field-effect transistor (HFET) with a Si delta-doped layer. The p-GaN layer greatly improves buffer isolation (between neighboring mesas) in AlGaN/GaN HFET and leads to effective carrier confinement. compensates not only depletion caused by formation pn junction, but also even causes increase two-dimensional electron gas (2DEG) density. proposed shows improved such as high drain current density transconductance...

A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal- semiconductor-metal (MSM)-type GaN UV and standard Si CMOS APS controller. The photodetector region of the circuit replaced MSM sensor, it connected together on printed board with chip. dark photoresponsive current densities fabricated were 2.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> 1.6...

Semi-insulating undoped GaN films were grown based on controlling the size of nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950 ° with ramping time 4 min, then this temperature for 1 min. Second, increased to 1020° 2 min and layer finally 1020 40 The film by sequence exhibited sheet resistance up 10 9 Ω/sq mirror-like surface morphology. By slow 950° in initial phase growth, smaller grain sizes higher nuclei densities formed columnar mode...

We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated MISIM sensor showed two distinguishable sensing windows, namely, UV-A and UV-B region with sharp cutoff characteristic. graphene-electrode had lower dark current density better UV-to-visible rejection ratio than that of Ni-electrode

GaN-based metal-insulator-semiconductor- insulator-metal (MISIM) photodiodes using three kinds of high-k dielectrics (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , HfO and ZrO ) were fabricated, their electrical, photo response, noise properties characterized. The GaN MISIM photodiode showed the lowest dark current density 5.43 x 10 <sup...

This is a first time report of ruthenium oxide (RuO/sub 2/) Schottky contact on GaN. RuO/sub 2/ and Pt diodes were fabricated their characteristics compared. When the was annealed at 500/spl deg/C for 30 min, current-voltage (I-V) capacitance-voltage (C-V) dramatically improved. The 2//GaN exhibited reverse leakage current that least two or three orders lower in magnitude than Pt/GaN along with very large barrier height 1.46 eV, which highest value ever reported GaN system.

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying thickness (0 10 nm) of Al₂O₃ insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance unprotected TLM pattern after RTP was rapidly increased 1323 Ω/□ from value 400 as-grown sample due thermal damage high temperature On other hand, resistances protected thin (when its is larger than 5 were slightly decreased...

Schotty-type solar-blind ultra-violet photodetectors were designed and fabricated by employing an unintentionally doped AlGaN layer, grown on a sapphire substrate metal-organic chemical vapor deposition (MOCVD). When low-temperature interlayer was inserted between the GaN active layers, it found to play important role in decreasing thermal lattice mismatch-induced crack density layer. The Schottky-type crack-free layer then exhibited excellent electrical characteristics UV sensing behavior....

We proposed and fabricated normally off GaN MOSFETs with an epitaxially regrown n + source/drain after a short period of dry etching on sapphire substrate. The S/D MOSFET (MOSFET A) exhibited enhanced performance in terms current drivability access resistance compared the same without surface before regrowth B). While A has saturation drain 10 mA/mm at V G = 8 V, field-effect mobility 22 cm 2 -1 s , series R SD 0.57 kΩ, B 3 mA/mm, 12 0.93 respectively. electrical characteristic was also much...

We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for electronic cooling devices by atomically depositing ultrathin Al2O3 films onto indium-tin-oxide-coated glass. A diode-type test indicated prominent behaviors, such as a low threshold field 3–5V∕μm nonuniform luminescence intensity with localized distribution spots. propose resonant Fowler–Nordheim tunneling electrons transported via Frenkel traps well depth ϕB=0.8–0.9eV in...