We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated MISIM sensor showed two distinguishable sensing windows, namely, UV-A and UV-B region with sharp cutoff characteristic. graphene-electrode had lower dark current density better UV-to-visible rejection ratio than that of Ni-electrode

GaN-based metal-insulator-semiconductor- insulator-metal (MISIM) photodiodes using three kinds of high-k dielectrics (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , HfO and ZrO ) were fabricated, their electrical, photo response, noise properties characterized. The GaN MISIM photodiode showed the lowest dark current density 5.43 x 10 <sup...

Local annealing method was developed to change the Ni-AlGaN/GaN and Ni-GaN rectifying contacts into ohmic by using dielectric breakdown of a sacrificial insulator. The current increased 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> times in an AlGaN/GaN Schottky diode as result step. An interdigitated metal-semiconductor-metal ultraviolet (UV) sensor fabricated locally annealed electrodes. UV visible rejection ratio GaN-based 5.2 at...

Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved ohmic behavior performance compared to non-annealed sensor. Its at bias of −2.0 V UV-to-visible rejection ratio (UVRR) −7.0 8.5 × 10−10 A/cm2 672, respectively, which are significant improvements over sensor 1.3 10−7 UVRR 84, respectively. The results transmission electron...

We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO 2 and Al O 3 . The showed better photo-electronic properties than that dark photo-responsive current density ratios the device with were 250 196 at 10 V bias. Their UV/visible rejection (UVRRs) 1.65 × 1.34 for 365 nm wavelength 1 bias, respectively. noise spectral was 1.3 A /Hz Hz bias which has lower value over 20 % improved

We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing spectral photo-responsive drain current. The photons of 2.25 eV were most effective photon energy to excite electrons trapped deep levels, and was attributed induced bias. This trap might be related Ga vacancy GaN bulk layer. MISHFET more significant for wider gate-drain spacing.

Introduction: Balloon sinuplasty (BSP) is a newly developed catheter-based technique for dilating sinus ostia to improve ventilation and drainage.BSP has been in clinical use since 2005, but there many debates criticisms between rhinologists.The aim of this study evaluate the feasibility efficacy BSP mostly under local anesthesia Korean population.Method: We performed 77 patients with chronic rhinosinusitis refractory medical therapy from December 2013.Balloon procedures were with/without...

GaN-based heterostructure field-effect transistors (HFETs) have been attracted considerably as candidates for next-generation devices both high-power and high frequency applications, because of its excellent material properties such breakdown field, polarization-induced two dimensional electron gas (2DEG) saturated velocity [1-3]. Despite the advantages, current collapse has concerned reliability AlGaN/GaN HFETs. In this work, we investigated origins in MISHFETs after negative gate bias by...

AlGaN ternary compound material has been actively studied for application of UV photodiode. Schottky type metal-insulator-semiconductor-insulator-metal (MISIM) diode structure an advantage low dark current that the could show highly selective property.[1] In this work, we fabricated a GaN MISIM two high-k dielectrics ZrO 2 and Al O 3 as insulation layer. The were deposited by using atomic layer deposition (ALD),[2,3] compared them photo-electronic properties. As result, photodiode with have...

The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and tunneling from source to channel. dependent on height, but barely affected doping concentration. For depletion type gallium nitride SB with an ITO electrodes, threshold voltage calculated be 3.5 V, which similar measured value 3.75 1.2 times higher than value.

We proposed and fabricated AlGaN/GaN-based asymmetric Schottky-type metal-semiconductor-metal (MSM) ultraviolet (UV) photodiode with as-deposited Ti/Al/Ni/Au Ni/Au as Schottky contact metal schemes. electrode was annealed locally by using the electrical breakdown of a sacrificial insulator. investigated optical characteristics devices before after local annealing. After selective annealing, dark current at -1.7 V bias UV to visible rejection ratio (UVRR) -5 were 2.4×10-12 A/cm2 527, which...

We proposed and fabricated AlGaN asymmetric Schottky-type metal-semiconductor-metal (MSM) ultraviolet (UV) photodiode with as-deposited Ti/Al/Ni/Au Ni/Au as Schottky contact metal schemes. III-nitride UV sensors have been studied for solar monitoring, fire alarm, missile detection [1, 2]. While GaN based MSM type photodiodes were widely reported showing high responsivity attributable to low dark current noise [3, 4], has not well. Despite the higher bandgap energy, relatively poor UVRR...

Asymmetric metal-semiconductor-metal (MSM) AlGaN ultraviolet (UV) sensors with 33 % and 39 Al composition were fabricated using the selective annealing method. Diodes lower compositions exhibited dark current densities improved UV sensing properties. TEM-EDS analysis showed that caused interdiffusion between metals; interface was modified by N penetration into Ti layer. For of %, density UV-to-visible rejection ratio (UVRR) after 7.7×10SUP-10/SUP A/cm² 135, respectively, which significant...