A5109244221- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Gastrointestinal Bleeding Diagnosis and Treatment
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors
- Energy Efficient Wireless Sensor Networks
- Wireless Body Area Networks
- Analytical Chemistry and Sensors
- Energy Harvesting in Wireless Networks
- Transcranial Magnetic Stimulation Studies
- Gastrointestinal motility and disorders
- Mobile Ad Hoc Networks
- Opportunistic and Delay-Tolerant Networks
- ZnO doping and properties
- Advanced MRI Techniques and Applications
- Engineering and Technology Innovations
- EEG and Brain-Computer Interfaces
- Speech and Audio Processing
- IoT-based Smart Home Systems
- Nanowire Synthesis and Applications
- Advanced Image and Video Retrieval Techniques
- Semiconductor Quantum Structures and Devices
- Infant Health and Development
Kyungpook National University
2012-2025
Kangwon National University
2025
California State University, Fresno
2009-2012
Kyungil University
2005-2012
University of Nebraska at Omaha
2005-2007
University of Nebraska–Lincoln
2005-2006
Two types of fin-shaped field-effect transistors (FinFETs), one with AlGaN/GaN heterojunction and the other heavily doped heterojunction-free GaN layer operating in junctionless mode, have been fabricated characterized. The threshold voltages both devices shift toward positive direction from large negative value as fin width decreases. Both exhibit high ON-state performance. FinFETs show superior OFF-state performance because current flows through volume channel layer, which can be fully...
As the explosive growth of ISM band usage continues, there are many scenarios where different systems operate in same place at time. One growing concerns is coexistence wireless [18]. For successful deployment mission-critical such as sensor networks, it required to provide a solution for coexistence. In this paper, we propose new scheme using multiple radio channels 802.15.4 LRWPAN and 802.11b WLAN. To evaluate effectiveness proposed scheme, measurement simulation study conducted. The...
AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic wet etch in tetramethyl ammonium hydroxide solution. The investigate device demonstrated extremely broad transconductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ) ranging from ~0 to ~8 V at xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> = 10 V, which is...
Background: Lee Silverman Voice Treatment-BIG (LB) was developed for Parkinson’s disease patients to improve patients’ movement amplitude and accuracy through large movements enhance self-awareness recalibration. This study aimed review studies on LB neurological diseases other than examine its potential as an intervention tool. Method: The main search databases included Google Scholar, PubMed, ScienceDirect. ‘Neurological disease’, ‘LSVT-BIG’, ‘Treatment or Rehabilitation’, ‘Intervention’...
Background: Lee Silverman Voice Treatment-BIG (LB) was developed for Parkinson’s disease patients to improve patients’ movement amplitude and accuracy through large movements enhance self-awareness recalibration. This study aimed review studies on LB neurological diseases other than examine its potential as an intervention tool. Method: The main search databases included Google Scholar, PubMed, ScienceDirect. ‘Neurological disease’, ‘LSVT-BIG’, ‘Treatment or Rehabilitation’, ‘Intervention’,...
In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A circuit was used to measure output voltage sensor directly. The proposed varied by antigen-antibody interactions on gate surface due CRP charges. HFET-based with applied shows that can be detected in wide range concentrations, varying from 10 ng/mL 1000 ng/mL. X-ray photoelectron spectroscopy carried out verify...
In this paper, a carefully designed conductive shield plate is presented, which helps to improve localization of the electric field distribution induced by transcranial magnetic stimulation for neuron stimulation. The introduced between figure-of-eight coil and head. order accurately predict inside brain examine effects plate, realistic head model constructed from resonance image data with help processing tools finite-element method in three dimensions employed. Finally, show improvements...
Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) fin width (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fin</sub> ) of 120 nm, height (H 250 and gate length (L xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> 200 nm. The proposed achieved very low drain leakage(I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> <; 8×10 <sup...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTStructure-activity relation of chloramphenicolsCorwin Hansch, Kenneth Nakamoto, Michael Gorin, Peter Denisevich, Edward R. Garrett, S. M. Heman-Ackah, and C. H. WonCite this: J. Med. Chem. 1973, 16, 8, 917–922Publication Date (Print):August 1, 1973Publication History Published online1 May 2002Published inissue 1 August 1973https://pubs.acs.org/doi/10.1021/jm00266a011https://doi.org/10.1021/jm00266a011research-articleACS PublicationsRequest reuse...
We present a new semi‐insulating carbon‐doped GaN/undoped GaN multi‐layered buffer structure for AlGaN/GaN heterojunction field effect transistors, which drastically suppresses current collapse in MISHFET with improving the on‐current performance of device but without degrading breakdown characteristic. It is believed that spatial compensation between layers not only makes layer very highly resistive, also prevents electrons from 2DEG channel being captured into deep traps layer, maintains...
Lateral GaN nanowire gate-all-around transistor has been fabricated with top-down process and characterized. A triangle-shaped 56 nm width was implemented on the GaN-on-insulator (GaNOI) wafer by utilizing (i) buried oxide as sacrificial layer (ii) anisotropic lateral wet etching of in tetramethylammonium hydroxide solution. During subsequent AlGaN epitaxy source/drain planar regions, no growth occurred nanowire, due to self-limiting property. Transmission electron microscopy...
The UV-to-visible rejection ratio is one of the important figure merits GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication GaN devices, we tried to grow a epitaxial layer on silicon substrate with complicated buffer layers for stress-release. It known that structure affects performance devices fabricated layers. In this study, show design can make effect photodetector GaN-on-silicon step-graded AlxGa-xN has highly-selective photoresponse at 365-nm wavelength....
In this paper, we present a comparison of four wireless sensor network protocols: MultiHopRouter, TinyAODV(Ad-hoc On-demand Distance-Vector), GF (Greedy Forwarding), and GF-RSSI Forward with Received Signal Strength Indication). Performance measurement was conducted on testbed for medical application research. Based our measurements, performs well in various operating conditions. Especially, it shows high success rate packet delivery moderate energy consumption.
We proposed and fabricated a metal-insulator-semiconductor-insulator-metal type dual-wavelength sensitive UV sensor by using an AlGaN/GaN hetero-structure layer epitaxially grown on sapphire substrate thin Al2O3 inserted between AlGaN Ni Schottky electrodes to reduce dark current improve the UV/visible rejection ratio. The shows high photo-responsive both wavelength regimes with significantly improved ratio under regime of GaN-related response. Cut-off wavelengths can be controlled changing...
We fabricated a GaN-based metal–semiconductor–metal (MSM)-type UV sensor using multilayer graphene as transparent Schottky electrodes. The GaN MSM showed high photo-to-dark current contrast ratio of 3.9 × 105 and UV-to-visible rejection 1.8 103 at 7 V. as-fabricated with electrodes has low bias dependence maximum photoresponsivity noise-like response visible wavelength in the 500 nm region. These problems were successfully solved by treatment buffered oxide etcher (BOE), photoresponse...
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped layer. The layer showed sufficiently good characteristics, attributed to the depletion effect between layers, even though thickness in periodic structure was designed be very thin minimize total carbon incorporation into AlGaN/AlN/GaN heterostructure grown on exhibited much better electrical structural properties than that conventional thick confirmed by Hall measurement, x-ray...
Summary form only given. GaN-based field effect transistors (FETs) are widely used in power switching and amplifier application due to its superior material properties such as wide band-gap energy, high breakdown field, electron saturation velocity, which results output current voltage [1]. On the other hand, nanowire extensively investigated improve device performance fin-shaped FETs (FinFETs), lateral vertical type [2 - 4]. Especially, (VNFETs) currently being evaluated a promising...
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, only small shifts in operating parameters metal–oxide–semiconductor HEMTs observed at doses up 1 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>2</i></sub> ). Bias-induced electron trapping and radiation-induced-hole can occur...
The fabrication of a single pixel sensor, which is fundamental element device for the an array-type requires integration technique photodetector and transistor on wafer. In conventional GaN-based ultraviolet (UV) imaging devices, hybrid-type process typically utilized, involves backside substrate etching wafer-to-wafer bonding process. this work, we developed UV passive sensor (PPS) by integrating GaN metal-semiconductor-metal (MSM) Schottky-barrier (SB) metal-oxide-semiconductor...