A5081146532- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Quantum and electron transport phenomena
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Radiation Effects in Electronics
- Advanced Memory and Neural Computing
- Plasma Diagnostics and Applications
- Semiconductor Lasers and Optical Devices
- Neural Networks and Reservoir Computing
- Photonic Crystals and Applications
- 3D IC and TSV technologies
- Advanced Power Amplifier Design
- Fusion materials and technologies
- Photocathodes and Microchannel Plates
- Internet of Things and Social Network Interactions
- Perovskite Materials and Applications
Electronics and Telecommunications Research Institute
2016-2025
Yale University
2003-2016
Shangrao Normal University
2015
Institut de Microélectronique, Electromagnétisme et Photonique
2010-2014
Université Grenoble Alpes
2011-2014
Institut polytechnique de Grenoble
2011-2014
Los Angeles Harbor College
2013
Kyungpook National University
2010
National Cheng Kung University
2004
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, presence or absence of a forming gas anneal can strongly affect NW device hardness. Low-frequency noise measurements are carried out probe near-interfacial oxide-trap (border-trap) densities, TCAD simulations performed assist in understanding the charge...
The operation of advanced planar MOSFET and FinFET transistors on SOI is investigated under high magnetic field. geometrical magnetoresistance observed when the Hall field suppressed thanks to device geometry. This method free from any assumptions (oxide body thickness, effective channel length, etc.) delivers most accurate indisputable value carrier mobility. Our measurements show, for first time, mobility behavior in FinFETs with double- triple-gate ultrathin MOSFETs. reveals electron...
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, only small shifts in operating parameters metal–oxide–semiconductor HEMTs observed at doses up 1 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>2</i></sub> ). Bias-induced electron trapping and radiation-induced-hole can occur...
While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics optoelectronics, its practical implementation into miniaturized integrated circuits has been significantly limited due to difficulties in large-scale growth directly on epitaxial semiconductor wafers. Herein, the realization of a wafer-scale h-BN van der Waals heterostructure with 2 in. AlGaN/GaN high-electron mobility transistor...
Abstract The effects of the parasitic gate capacitance and resistance ( R g ) on radiofrequency (RF) performance are investigated in L G = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When device characteristics compared, difference DC is negligible. RF terms current‐gain cut‐off frequency f T maximum oscillation max substantially depend size. For clarifying dependence, small‐signal modeling conducted extract . reduced μm, increases by...
Abstract We have investigated the channel mobility in gated region of a set high-quality AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances contact, access, and regions were extracted from straightforward I D ( V G ) measurements on sets HEMTs with four different gate-to-drain distances. By correcting for effects contact access resistances, much more accurate effective curves region, compared to those reported past, been obtained. maximum that has found be 1100 cm 2 −1 s...
We report the characteristics of InGaAs-based independent double-gate FinFETs with Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /LaAlO as gate dielectric. The device can be operated in three different modes ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">i.e.,</i> single-, double-, and double-gate) made possible by physically separated two sidewall gates. When is mode, it...
The device performance deterioration mechanism caused by the total ionizing dose effect after γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 gate dielectric layer. radiation hardness according to layer also compared between two different MIS-HEMTs. Although has exhibited strong tolerance Si-based devices, there is no detail report of effects MIS-HEMTs employing pulsed-mode stress...
Modulation of the sub-band electron population in inversion channel 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by bias dependence layer transport parameters. Two distinct inversion-layer species were detected magnetic-field-dependent magnetoresistance measurements and high-resolution mobility spectrum analysis. According to self-consistent Poisson-Schrödinger calculations, these correspond carriers sub-bands within Si region. The peak carrier with highest sheet...
The proton radiation hardness has been investigated in GaN-based MIS-HEMTs with various gate insulating systems. Through the pulsed mode measurements and carrier mobility extraction, we have revealed that Coulomb scattering generated by trapped charges inside of layer is a key device performance degradation factor. We also found out SiN/Al2O3 bi-layer system exhibits stronger immunity to compared SiN single-layer since dielectric quality ALD deposited Al2O3 better than PECVD layer. Our...
The impacts of various layout configuration and device dimensions on performance are examined. geometrical scaling issues including emitter length stripe-number used to shift simultaneously the optimum noise source impedance a point that is close 50 /spl Omega/. Via this method, not only optimal transistor size for low-noise applications obtained, but matching network simplified reduce losses passive networks chip area. Based experimental results, SiGe HBTs bias suitable amplifiers (LNAs)...
The density of traps at the top interface is difficult to assess in advanced SOI MOSFETs with high-K dielectric and ultrathin film. Searching for a characterization strategy, we compare various approaches: front-channel subthreshold slope, back-channel coupling coefficient between front back channels. slope shows largest variation trap density. However, resolution may not be sufficient very thin buried oxide.
The impacts of SiN/Al2O3 bi-layer passivation on the carrier transport characteristics in GaN-based metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) were studied. Various mechanical stresses, as measured by micro-Ramam spectroscopy, introduced GaN channel according to different systems. SiN dielectric layer deposited plasma enhanced chemical vapor deposition top capping resulted compressive stress. On other hand, Al2O3 atomic generated tensile stress, which...
Abstract We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within range of 0.13 μm–0.16 μm to suit intended application. The core processes are a two‐step electron‐beam lithography using three‐layer resist and recess etching citric acid. An was fabricate T‐shaped electrode with fine foot relatively large head. This realized through use three‐layered beam exposure development. Citric acid‐based is wet...
${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}/\mathrm{G}\mathrm{a}\mathrm{N}$ two-dimensional electron gas structures have been grown by molecular-beam epitaxy and exhibited surface roughness defined the faceted morphology of crystal grains or subgrains, with grain size being obvious lateral periodicity. The amplitude varied in a wide range depending on substrate type growth conditions. effect interface correlation length order sizes (0.1--1 \ensuremath{\mu}m) scattering...
We describe a linear-geometry microcavity laser with microloops as end reflectors to achieve single-directional output. Finite-difference time-domain simulation is used optimize the microloop mirror (MLM) performance and simulate operation. show that microlaser cavity length small 25 μm can be realized. A method obtain higher output power from widened gain medium (WGM) discussed. An initial fabrication of MLM-WGM transparent MLM formed by quantum-well intermixing presented. low-lasing...
Various GaN channel thicknesses (0.5, 2.0, 3.5 and 6.3 μm) grown by metal organic vapor chemical deposition (MOCVD) on sapphire substrate were prepared to investigate the effects of thickness transistor characteristics. X-ray diffraction (XRD), pulsed ID(VD), as well gate stress DC measurements employed in this study. The results have revealed that charge trapping AlGaN/GaN hetero-structure is reduced performance improved increased up a certain value (TGaN_Channel = μm); More specifically,...