A5100745976- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- Radio Frequency Integrated Circuit Design
- Magnetic properties of thin films
- Semiconductor Quantum Structures and Devices
- Microwave Engineering and Waveguides
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Advanced Materials and Semiconductor Technologies
- Structural Engineering and Vibration Analysis
- Nuclear Materials and Properties
- Seismic Performance and Analysis
- Advanced Energy Technologies and Civil Engineering Innovations
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear reactor physics and engineering
- Advanced Combinatorial Mathematics
- Advancements in Photolithography Techniques
- Advanced Memory and Neural Computing
- Vibration Control and Rheological Fluids
Korea Atomic Energy Research Institute
2017-2025
Sungkyunkwan University
2025
University of Cambridge
2025
Chungnam National University
2020
Government of the Republic of Korea
2020
Korea Telecom (South Korea)
2020
Kyungpook National University
2005-2015
Korea University
2014-2015
SK Group (United States)
2014
LG (South Korea)
2013
Normally off Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /GaN MOSFETs are fabricated by utilizing a simple tetramethylammonium hydroxide (TMAH) treatment as postgate-recess process. The TMAH-treated device with gate length of 2.5 μm exhibited excellent performances, such threshold voltage 3.5 V, maximum drain current 336 mA/mm, and breakdown 725 along extremely small leakage...
A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> / cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) at AlGaN/GaN heterostructure as source and drain, which can be obtained controlling the tensile stress accompanied with growth of on silicon substrate. The fabricated Al <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...
The electrical characteristics of the Al2O3/GaN metal–insulator–semiconductor capacitors are investigated focusing on effect post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaOx Ny) interfacial layer is formed at interface even non-annealed sample due to incorporation released oxygen from Al2O3. After PDA ambient, GaOx Ny becomes oxygen-rich which plays a role increasing negative effective oxide charge and hence...
High-quality SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is deposited on GaN by radio frequency (RF) magnetron sputtering at room temperature. Adding oxygen to the gas effectively compensated for vacancies and resulted in a breakdown field of 9.6 MV/cm sputtered- film GaN. The reduced electron concentration mobility 2-D due sputtering-induced surface damage were removed an optimized postannealing treatment. A sputtered-SiO /...
TID effects occur in MOS-gated transistors radiation environments where proton and gamma-rays irradiate the devices. seriously affect electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result malfunction power systems when exposed to long-term conditions. We irradiated protons into 1.2 kV SiC MOSFETs evaluated change properties analyze TID’s effects. As a experiment, threshold voltage (VT) on-resistance (Ron) decreased because...
The efficient and stable production of therapeutic proteins in Chinese hamster ovary (CHO) cells hinges on robust cell line development (CLD). Traditional methods relying random transgene integration often result clonal variability, requiring extensive resource-intensive screening. To address this limitation, we established a systematic, multiomics-driven framework that integrates 202 RNA-sequencing datasets whole-genome sequencing data to identify genomic "hotspot" loci for precise...
We present a new semi‐insulating carbon‐doped GaN/undoped GaN multi‐layered buffer structure for AlGaN/GaN heterojunction field effect transistors, which drastically suppresses current collapse in MISHFET with improving the on‐current performance of device but without degrading breakdown characteristic. It is believed that spatial compensation between layers not only makes layer very highly resistive, also prevents electrons from 2DEG channel being captured into deep traps layer, maintains...
SiO2Al2O3 double dielectric stack layer was deposited on the surface of GaN-based light-emitting diode (LED). The enhances both electrical characteristics and optical output power LED because first Al2O3 plays a role effectively passivating p-GaN second lower index SiO2 increases critical angle light emitted from surface. In addition, effect Fresnel reflection is also responsible for enhancement in passivated LED. leakage current with -3.46 × 10-11 A at -5 V, least two three orders magnitude...
A <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> double dielectric stack layer was deposited on the surface of a GaN-based light-emitting diode (LED). The increases optical output power LED because first Notation="TeX">$ \hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> plays role as an effective passivation and second...
A crack-free AlGaN/GaN heterostrucure is grown on 4-in Si (111) substrate with AlSiC precoverage layer. Covering the surface layer, until growth of AlN wetting buffer found to be effective in compensating strong tensile stress GaN layer substrate. The metal-oxide-semiconductor field-effect transistor, fabricated this heterostructure, exhibits excellent normally-off characteristics threshold voltage 7.2 V, maximum drain current 120 mA/mm, ON/OFF ratio <formula formulatype="inline"...
We evaluated the electrical characteristics of two different AlGaN/GaN high-electron mobility transistors (HEMTs) for 5-MeV proton irradiation effects. The difference HEMTs originates from isolation methods, such as mesa etching and nitrogen ion implantation. At a fluence 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> p/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , saturation drain currents devices are reduced by 50%...
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped layer. The layer showed sufficiently good characteristics, attributed to the depletion effect between layers, even though thickness in periodic structure was designed be very thin minimize total carbon incorporation into AlGaN/AlN/GaN heterostructure grown on exhibited much better electrical structural properties than that conventional thick confirmed by Hall measurement, x-ray...
The effects of high energy (57 MeV) proton irradiation on the electrical characteristics AlGaN/GaN MISHEMTs were investigated. fabricated with two different types gate dielectrics, atomic layer deposited (ALD)-Al2O3 and plasma enhanced chemical vapor (PECVD)-SiNx. It was found that induces negative charges in dielectric layers, which would degrade performances MISHEMTs, such as threshold voltage shift reduction drain current. After irradiation, increase induced charge density MISHEMT Al2O3...
While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics optoelectronics, its practical implementation into miniaturized integrated circuits has been significantly limited due to difficulties in large-scale growth directly on epitaxial semiconductor wafers. Herein, the realization of a wafer-scale h-BN van der Waals heterostructure with 2 in. AlGaN/GaN high-electron mobility transistor...
The recessed-gate AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs) with a p-GaN back-barrier studied in this work exhibited much lower buffer leakage current than those without the back-barrier. threshold voltage of device was controlled by varying depth gate recess etching, and value as high 2.9 V obtained deep gate-recess etching into channel layer. structure has advantage both low voltage, which is important for power-switching applications. In...
This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on gate-all-around junction-less field-effect transistor (GAA-JLFET) with Si/SiGe heterostructure for high-density applications. The proposed 1T-DRAM achieves the sensing margin using difference in hole density body region between ‘1’ and ‘0’ states. forms quantum well reduces band-to-band tunneling (BTBT) barrier drain. Compared performances of Si homo-structure, improves retention time because its...