This article presents a bidirectional soft-switching push-pull resonant converter that is highly efficient over wide range of battery voltages. It derived by integrating current-fed circuit and an active voltage doubler with switch. The operates as pulsewidth modulation (PWM) resonant-boost in the forward direction, but PWM half-bridge backward direction. most attractive feature proposed that, employing switch corresponding switching modulation, it can achieve almost ZVS at turn-off instants...

We report the characteristics of InGaAs-based independent double-gate FinFETs with Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /LaAlO as gate dielectric. The device can be operated in three different modes ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">i.e.,</i> single-, double-, and double-gate) made possible by physically separated two sidewall gates. When is mode, it...

This article presents a highly reliable push–pull resonant dc/dc converter for medium-power applications. At medium power, conventional experiences very high current spike at the secondary-side switches, and this can destroy active power components. We eliminate by connecting clamp diodes to capacitors. Moreover, proposed achieves fully zero-voltage-switching (ZVS) turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> switches when...

Abstract The power relay assembly (PRA) is an essential component to ensure the safety of electric vehicle. We propose a semiconductor‐based precharge switch overcome shortcomings conventional mechanical relay, which currently used as in PRA. gate‐driving circuit uses photocoupler instead integrated reduce complexity and cost. Five devices, namely, two insulated‐gate bipolar transistors (IGBTs), silicon carbide metal–oxide–semiconductor field‐effect (SiC MOSFETs), one...

This article proposes a high step-up quasi-resonant converter that minimizes switching loss over wide range of input voltages. By employing bidirectional switch and corresponding modulation, the proposed achieves main with almost zero voltage, therefore incurs very little at all active switches. Moreover, no instantaneous reactive current flows through circuit under variations voltages loads. The duty cycle primary-side switches is fixed to 0.5; then, clamp capacitor become identical,...

Abstract The effects of the parasitic gate capacitance and resistance ( R g ) on radiofrequency (RF) performance are investigated in L G = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When device characteristics compared, difference DC is negligible. RF terms current‐gain cut‐off frequency f T maximum oscillation max substantially depend size. For clarifying dependence, small‐signal modeling conducted extract . reduced μm, increases by...

We present an analysis of microstrip coupled lines (MCLs) used to improve the stability a 60 GHz narrowband amplifier. The circuit has 4-stage structure implementing MCLs instead metal-insulator-metal (MIM) capacitors for unconditional amplifier and yield enhancement. parameter, U, is compare with that MIM capacitors. Experimental results show are more stable than same capacitances as because parasitic parallel resistances lower those Moreover, bandwidth using narrower one series inductances higher

This article proposes a highly efficient current-fed half-bridge resonant converter over wide range of the output voltages. By adding bidirectional switch across center nodes voltage doubler and applying corresponding switching modulation, accomplishes almost zero-voltage at turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> instant under variations. Moreover, circuit experiences very little instantaneous reactive current even when...

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, lattice temperature effects on leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, the self-heating effect, applying single Si3N4 layer. then employed Al2O3 thicknesses top of Si3N4, also investigated across gas channel various to...

We propose a 5/12 ​V dual output DC-DC converter that can achieve high efficiency and small size form factor. Using low temperature co-fired ceramic (LTCC)-based multi-layer circuits, the minimizes power losses caused by ground metal planes reduces size. The lateral dimension of with nine LTCC layers was 35 ​mm ​× ​45 ​mm. proposed compatible outputs typical electric bike batteries, which are 48 36 ​V. At full-load condition 3.1 ​A ​at 5 2 12 output, measured 92.9% 93.6% supply voltage ​V,...

This article proposes a highly efficient quasi-single-stage ac–dc converter that incorporates bidirectional switch at the secondary side of circuit. Its attractiveness is proposed achieves almost ZVS turn-off high instantaneous power and low-voltage low power. Moreover, secondary-side switching reduces loss main switch, thereby more than offsets losses occur clamp in conventional converter. An additional benefit this voltages across primary-side capacitors are well balanced because duty...

We report the ohmic contact formation mechanism for a low resistance PdGe-based system on GaAs sample containing highly and poorly doped layers annealed in temperature range of 380–450°C. The lowest average specific Pd/Ge/Ti/Pt was 2.4×10 -6 Ω·cm 2 after annealing at 400°C. This believed to be due Ga 5 Pd compound. Cross-sectional scanning electron microscopy Auger spectroscopy were utilized this study. thermally stable isothermal 400°C 6 h.

We have grown an AlIn(Ga)N/GaN heterostructure which is a promising alternative to the AlGaN/GaN heterostructure. The mobility and carrier concentration of two‐dimensional electron gas (2DEG) formed at heterointerface were strongly dependent on both growth temperature pressure. Two optimized conditions for with low sheet resistance less than 300 Ω/sq obtained by varying pressure from 750 1070 °C 100 torr, respectively: (i) high 2DEG 2.4 × 10 13 cm −2 1010 2 V −1 s (grown 900 torr); (ii) 1910...

We have invented a novel channel mobility extraction method in the gated region of AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances contact, gated, and access were extracted from Id(Vg) measurements on set HEMTs with various gate-to-drain distances gate lengths. By considering impact contact resistances, an accurate model to describe behavior has been achieved. This employed for different GaN thickness devices study effect device performance. Our systematic revealed that...

We report the ohmic contact formation mechanism for a low-contact resistance PdGe-based system on high-low doped GaAs with and without undoped cap layer annealed in temperature range of 380-450°C. The lowest average specific resistances Pd/Ge/Ti/Pt contacts after annealing at 400°C were 5.3×10-6 Ω cm2 2.4×10-6 cm2, respectively. And Pd/Ge/Ti/Pt/Au 380°C 3.5×10-6 3.4×10-6 For layer, x-ray diffraction, cross-sectional scanning electron microscopy Auger spectroscopy utilized this study. was...

A leadless surface mount package was developed to enhance the switching and heat-dissipation properties of a power semiconductor. The implemented through low-temperature co-fired ceramic (LTCC)-based multilayer circuit substrate that could form embedded cavities. silicon carbide (SiC) Schottky barrier diode (SBD) bare die attached cavity in LTCC substrate. Chip interconnection realized using wide thick copper (Cu) clip with low parasitic inductance electrical resistance compared those...

Abstract Electrostatic discharge (ESD) testing for human body model tests is an essential part of the reliability evaluation electronic/electrical devices and components. However, global environmental concerns have called need to replace mercury‐wetted relay switches, which been used in ESD testers. Therefore, herein, we propose tester using metal oxide semiconductor‐controlled thyristor (MCT) with a significantly higher rising rate anode current (di/dt) characteristics. These MCTs,...

A dielectric resonator antenna with broad bandwidth at millimeter wave band is presented. This fabricated using low temperature cofired ceramics (LTCC) process, which one of the most promising candidates for system-in-package (SiP) technology. The proposed an aperture coupled antenna. central region surrounded by equally spaced metallic vias act as a resonator, and signal feeding located on bottom resonator. simulated wide 11.7 GHz (55.4–67.1 GHz), measured decreases to 9.6 (56.5–66.1 still...

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to Cu agglomeration. To suppress agglomeration on Ta layer, capping layer was structure using or SiO2 as suppressor. In case of suppressor, observed between two distorted films difference in thermal expansion filmand film high temperature. On other hand, found be suitable and did not occur even after annealing suppression diffusion.

Abstract In this article, 60 GHz MMIC down‐conversion mixers for a communication system are designed and fabricated on‐chip using 0.12 μm GaAs PHEMT process technology with an f T of 78 max 190 GHz.The characteristics monolithic cascode mixer open stub microstrip line compared those without line, which integrated including matching bias circuits. The measured at RF show conversion gain −16 dB, LO to isolation 21.5 IF 40.5 dB. Especially in the case mixer, characteristic is much better than...

We compared to the characteristics of fabricated AlGaN/GaN HEMTs on a Si substrate with conventional ohmic contact and improved contact. In metal scheme Ti/Al/Ni/Au or Ti/Al/Ti/Au, generally resistance is good but, surface topography has bad morphology due ball-up by low Al melting point at high temperature RTA over 800°C. order improve that, we applied encapsulation silicon dioxide thin film in process HEMT better than conventional. As results, was more 50% also low. Besides, T-gate...

This letter introduces a power limiter that limits the input to protect receiver when large enters radio frequency receiver. When receives signal, positive-intrinsic-negative (PIN) diode is turned on limit by lowering impedance. We analyzed characteristics of according method connecting PIN in parallel with and output transmission lines limiter. By embedding into cavity minimizing length wire, was designed implemented minimize parasitic inductance. In S-band, proposed limiter’s insertion...