In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted periodically carbon-doped (PCD) GaN layer and AlGaN back barrier layer. The PCD was proposed for reducing undesirable trapping effects, which resulted in effective suppression the current collapse compared to that conventional carbon structure. To further improve dynamic performances device increase electron confinement 2-D gas (2-DEG) channel,...

This letter reports on the performance improvement of phase-change memory (PCM) cells by applying silicon-germanium (SiGe) alloys as resistive heating layers. The in situ doped polycrystalline Si0.75Ge0.25 films, lying under holes filled with a Ge2Sb2Te5 (GST) material pore-style configuration, promoted temperature rise and phase transition GST. SiGe layer caused drastic reduction both set reset currents compared to conventional TiN heater material. threshold voltages PCM were almost uniform...

In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior the IFP structure analysis, we compared measured and simulated direct current characteristics of fabricated two-finger conventional T-shaped gate HEMTs. Then, HEMT with drain-side field plate (FP) was suggested enhance breakdown voltage characteristics. The maximum recorded 0.8 μm stretched FP 669 V....

A 28.5-32-GHz fast settling multichannel frequency synthesizer is implemented in 0.25-mum SiGe : C BiCMOS process technology for 60-GHz wireless personal area network (WPAN) applications. The phase-locked loop (PLL) synthesizes carrier frequencies between 28.5-32 GHz step of 500 MHz, and settles approximately 327 ns. proposed PLL can be employed as a source providing eight channels hopping carriers WPAN radio. To generate carriers, an integer- <i...

In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying copper-filled trench and via structures for improved heat dissipation. Therefore, used a basic T-gate HEMT device to construct thermal structures. To identify flow across structure, conductivity model transfer properties corresponding GaN, SiC, Cu materials were applied. Initially, simulated direct current (DC) GaN on SiC confirm self-heating effect HEMT. Then,...

The switching speed and the reliability of phase-change memory (PCM) device employing a SiGe film as heating layer were compared with those control conventional TiN layer. influence semiconducting nature on PCM operation was investigated. critical pulse width for onset set process reduced to less than about 50% by substitution TiN. cycling endurance value comparable that device, which indicated introduction did not induce degradation. heterojunction between GeSbTe layers so leaky effect...

The device performance deterioration mechanism caused by the total ionizing dose effect after γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 gate dielectric layer. radiation hardness according to layer also compared between two different MIS-HEMTs. Although has exhibited strong tolerance Si-based devices, there is no detail report of effects MIS-HEMTs employing pulsed-mode stress...

Abstract The effects of the parasitic gate capacitance and resistance ( R g ) on radiofrequency (RF) performance are investigated in L G = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When device characteristics compared, difference DC is negligible. RF terms current‐gain cut‐off frequency f T maximum oscillation max substantially depend size. For clarifying dependence, small‐signal modeling conducted extract . reduced μm, increases by...

In this letter, a new burst-mode optical receiver with burst detection function is proposed and single-chip 2.5-Gb/s has been fabricated using 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The high sensitivity wide dynamic range for various classes of power budges required in 10-Gigabit-capable passive network (XG-PON1) (2.5-Gb/s upstream 10-Gb/s downstream data rates). For the streams, overload were -32 -4 dBm at bit-error rate 10 <sup...

A 9.7-12.9 GHz monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. The LNA shows a noise figure of 1.7-2.1 dB with small-signal gain 20-26 across the frequency range. In continuous wave (CW) conditions, saturated output power 34 dBm showed at 11.2 third-order intercept point (OIP3) 42 also achieved 11.4 GHz.

We investigate DC characteristics of AlGaN/GaN high-electron mobility transistors by using a source-bridged field plate and additional bottom (BP) structure. The analysis experimental data was performed with two-dimensional simulator. Source connected BP structure stabilized threshold voltage transconductance regardless various drain voltages. effect location also analyzed, which had optimal values because the dependence breakdown current device on position between gate drain. Finally,...

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, lattice temperature effects on leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, the self-heating effect, applying single Si3N4 layer. then employed Al2O3 thicknesses top of Si3N4, also investigated across gas channel various to...

In this paper, a 9.1 to 11.5 GHz four-band PLL is presented. the proposed PLL, both an improved multi-modulus (MM) divider and adaptive LC VCO are depicted. The MM provides division ratios of 6 455 depending on mode six-mode prescaler. generates four bands oscillation frequencies covering - 11.6 GHz, including cross-coupled MOS array. array was devised reduce area capacitor compensate for power. achieves phase noises 98 dBc/Hz from 11.4 102 9.61 at offset 980 kHz. consumes 32mA 1.2V. It...

A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 μm SiG:C BiCMOS process technology whose f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> greater than 200 GHz. The provides tuning ranges of 44.9 48.9 GHz when its bias current 13 mA 58 60.4 a 7 draws into the VCO. phase noises are measured as 99 dBc/Hz from 48.86 93 60.32 GHz, at 10 MHz offset, respectively. shows moderate FOMs 156 dBc 158

This paper demonstrates the effect of fluoride-based plasma treatment on performance Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructure field transistors (MISHFETs) with a T-shaped gate length 0.20 μm. For fabrication MISHFET, an Al2O3 layer as dielectric was deposited using atomic deposition, which greatly decreases leakage current, followed by deposition silicon nitride layer. The foot region then selectively removed through reactive ion etching technique CF4 plasma. process...

DSRC provides high speed radio link between Road Side Equipment and On-Board within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for system is designed fabricated using 0.8 μm SiGe HBT process technology RF/LO matching circuits, input balun circuits IF output circuit are all integrated on chip. The measured performance 7.5 dB conversion gain, -2.5 dBm IP3, 46 LO to RF isolation, 56 current consumption of 21 mA 3.0 V supply voltage chip size 1.9 mm × 1.3 mm.

In this paper, we present the design of 15-GHz frequency synthesizer for 60-GHz WPAN. The PLL generates 7 channels output signals with 250 MHz step by using highspeed programmable divider operating up to 10 GHz. A double cross-coupled LC VCO is used achieving higher oscillation and shows about 20 % tuning range. represents phase noise -88 dBc/Hz at 1 offset from 15.75 GHz consumes 115 mA 2.5 V supply voltage. occupies 0.7 × 0.8 mm2 area fabricated 0.25 <i...

The unmanned swarm cyber-physical system (USCPS) is composed of a number aerial vehicles (UAVs), ground (UGVs), and control station (GCS) to perform cooperative missions. USCPS has dynamic topology because (UVs) move, enter, or withdraw from the field for missions, UVs are likely be dropped due defects external attacks. In this paper, we propose self-recovery scheme that responds UV causing isolated clusters. device not only unable but also able carry out conventional recovery process....