A5007387685- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Analytical Chemistry and Sensors
- Saffron Plant Research Studies
- Neuroscience and Neural Engineering
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Olfactory and Sensory Function Studies
- Advanced Image Fusion Techniques
- Advanced Materials and Mechanics
- Advanced Sensor and Energy Harvesting Materials
- Gas Sensing Nanomaterials and Sensors
- Advanced MEMS and NEMS Technologies
- Acoustic Wave Resonator Technologies
Kangwon National University
2023
Kyungpook National University
2017-2020
Samsung (South Korea)
1995
In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted periodically carbon-doped (PCD) GaN layer and AlGaN back barrier layer. The PCD was proposed for reducing undesirable trapping effects, which resulted in effective suppression the current collapse compared to that conventional carbon structure. To further improve dynamic performances device increase electron confinement 2-D gas (2-DEG) channel,...
Currently, analog in-memory computing, employing memristors into a crossbar array architecture (CAA), is the leading system among available neuromorphic hardware. This study presents highly tunable synaptic weight update based on multiterminal memtransistor device as solution for nonlinear operations and crosstalk issues in CAA memristors, which are long-standing challenges hardware applications. To explore an effective structure properties, with series parallel functioning by interface type...
To improve the stability and sensitivity of pH sensors based on AlGaN/GaN high electron mobility transistors (HEMTs), we proposed a modified sensing structure by integrating reference HEMT device. This structural sensor exhibits typical Nernstian behavior with 54.38 mV/pH, which is higher than value 49.43mV/pH derived from HEMT-based without HEMTs Furthermore, new enhanced approximately 19.2% in comparison that its traditional counterpart. The improved performances are analyzed using an...
We have grown an AlIn(Ga)N/GaN heterostructure which is a promising alternative to the AlGaN/GaN heterostructure. The mobility and carrier concentration of two‐dimensional electron gas (2DEG) formed at heterointerface were strongly dependent on both growth temperature pressure. Two optimized conditions for with low sheet resistance less than 300 Ω/sq obtained by varying pressure from 750 1070 °C 100 torr, respectively: (i) high 2DEG 2.4 × 10 13 cm −2 1010 2 V −1 s (grown 900 torr); (ii) 1910...
In this work, threshold voltage modulation realized by adjusting fin width and dielectric layer were investigated through MIS-FinFETs. As decreases from 120 to 30 nm, shifts toward positive direction finally becomes value while maintaining SS smaller than 60 mV/dec. The phenomenon of achieving sub-60 mV/dec characteristics illustrated simulation the concept effective channel length. for layer, 20 nm-thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We demonstrate the role of thin Al₂O₃ surface protection layer in improving device performance AlGaN/GaN high electron-mobility transistors (HEMTs) The use also simplifies process steps comparison with conventional SiO₂ or Si₃N₄ layer. is very effective not only protecting AlGaN during ohmic RTP at temperature, but passivating to greatly reduce electron trapping into states which leads improved current collapse. And fabrication gate length 0.15 ㎛ exhibited transconductance 365 mS/㎜ and drain...