A5007888774- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
Hanyang University
2023-2024
Inha University
2022-2023
In this letter, we investigated the ferroelectric characteristics of Hf <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_\text{0.5}$</tex-math> </inline-formula> Zr O notation="LaTeX">$_\text{2}$</tex-math> (HZO) deposited by radio frequency (RF) sputtering at various deposition powers and impact additional long-term furnace annealing (FA) after formation annealing. Significant improvements in properties...
Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> -IGZO) channel is demonstrated. DG-FeTFT composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFT notation="LaTeX">$_{\text {bottom}}{)}$ top conventional TFT (TFT {top}}{)}$ are combined into a single...
A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide layer and silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET SiO2 IL, the proposed confirmed have faster program/erase operations, wider memory window, improved endurance/retention characteristics due higher dielectric constant of HfSiOx superior interfacial state between HfxZr(1-x)O2 IL. The demonstrates power spectral density that approximately two times smaller than conventional FeFETs...
The ferroelectric (FE) properties of HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> were studied by modulating the rapid thermal annealing (RTA) rising time ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{r}$ </tex-math></inline-formula> ). As becomes shorter, polarization is clearly observed to increase prior becoming saturated. On contrary, leakage current that flowing through FE...