A5052273396- Advanced Memory and Neural Computing
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Conducting polymers and applications
- Phase-change materials and chalcogenides
- Photoreceptor and optogenetics research
- Advanced Sensor and Energy Harvesting Materials
- Polydiacetylene-based materials and applications
- Advanced Fiber Optic Sensors
- Magnetic and transport properties of perovskites and related materials
- Plasmonic and Surface Plasmon Research
- Advancements in Solid Oxide Fuel Cells
- Photonic and Optical Devices
- Anodic Oxide Films and Nanostructures
- Advanced Antenna and Metasurface Technologies
- Metamaterials and Metasurfaces Applications
- Elasticity and Material Modeling
- Thermal Expansion and Ionic Conductivity
- Electronic and Structural Properties of Oxides
- Structural Analysis and Optimization
- Electrochemical sensors and biosensors
- Advanced Battery Technologies Research
- ZnO doping and properties
- Electrodeposition and Electroless Coatings
- Neural dynamics and brain function
Imperial College London
2020-2024
Pohang University of Science and Technology
2012-2020
Korea Post
2012
A flexible and transparent resistive switching memory based on a natural organic polymer for future electronics is reported. The device has coplanar structure of Mg/Ag‐doped chitosan/Mg plastic substrate, which shows promising nonvolatile characteristics applications. It can be easily fabricated using solution processes substrates at room temperature indicates reliable operations. elucidated origin the bipolar behavior attributed to trap‐related space‐charge‐limited conduction in high...
A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The shows reproducible and reliable bipolar resistive switching characteristics. based on natural organic material a promising toward the next generation of nonvolatile nanoelectronics. chitosan as solid polymer electrolyte can be switched reproducibly between high low resistance states. In addition, data retention measurement confirmed reliability device....
Abstract Neuromorphic and cognitive computing with a capability of analyzing complicated information is explored as new paradigm intelligent systems. An implementation renewable material an essential building block artificial synaptic device suggested flexible transparent based on collagen extracted from fish skin demonstrated. This exhibits behaviors including analog memory characteristics, excitatory postsynaptic current, paired‐pulse facilitation short‐term plasticity. The brain‐inspired...
Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. also introduce biomolecular device that has starch-chitosan composite layer. The behavior can be controlled by mixing starch with chitosan the Whereas starch-based biomemory which show abrupt changes current level; mixed biopolymers undergoes gradual...
Abstract A tunable Fabry–Pérot resonator is realized using metal–insulator–metal structure, in which the insulator chitosan hydrogel. The swells response to changes relative humidity; this change affects transmissive structural color of multilayer structure. This utilized for a humidity sensor combined with photovoltaic cell. current through cell provides rapid precise measurement humidity, and an approximate, remotely‐readable estimate. requires no power, so device has numerous sensing applications.
Oxidation can strongly influence the performance of Cu nanowires (CuNWs) by decreasing their conductivity. Here, we identify and investigate a way to prevent oxidation process CuNWs maintain high conducting as transparent electrodes. were synthesised using an aqueous method. We prepared several temperature treatments (from 0-300 °C) represent in different environments, study changes morphology detail. Depending on temperature, smooth uniform exposed produced rough Cu2O CuO nanowires. then...
The main requirements for skin-attachable memory devices are flexibility and biocompatibility. We represent a flexible, transparent, biocompatible resistive switching random access (ReRAM) based on gold-decorated chitosan future flexible wearable electronics. device with an Ag/Au–chitosan/Au cross-bar structure shows nonvolatile ReRAM properties. This fabricated Au–chitosan-based (bioReRAM) reliable bipolar performance mechanical flexibility. essential characterizations including long data...
Physically Transient Electronic Devices (PiTEDs) are building blocks of biodissolvable diagnostics and therapeutics. We fabricate a PiTED integrated with data storage brain-inspired computing capable collection decision-making in case an emergency. It is also compatible the physiological environment human body biologically soluble degradable after performing required task. A flexible transparent biomemristor Mg/collagen/ITO structure fabricated using facile solution-assisted process. The...
Abstract Conductive bridge random access memory (CBRAM) is a possible replacement for static field‐programmable gate arrays (FPGAs) based on random‐access memory. Ge 2 Sb Te 5 (GST) used in CBRAMs as solid electrolyte due to its high diffusion properties of active ions and scalability obtain high‐density devices. Here, the trade‐off between window uniformity CBRAM GST solved by introducing N atoms into SE. Nitrogen‐incorporated film (N‐GST) proposed current GST‐based with improved...
Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area research. Designing a unique nanoscale prototype to achieve metasurface reliable resistive switching properties elusive goal. We demonstrate method exploit the advantages phase-change material (PCM) as light absorber data storage device. designed simulated perfect (MPA) that can be reconfigured by adjusting visible chalcogenide-based PCM. The suggested based on Ge2Sb2Te5 (GST) film,...
Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta2O5-x ) using sputtering. We investigated the influence zirconium as active top electrode material in lithographically fabricated ECM devices. A simple capacitor like (Pt/Zr/Ta2O5-x /Pt) structure represented resistive memory. cyclic voltammetry measurement demonstrated electrochemical process device. The I-V characteristics ECMs show stable bipolar...
We introduced tunable Fabry-Pérot resonator using metal-insulator-metal multilayer, in which the insulator is hydrogel foam of chitosan [1]. The chitosan, one polysaccharide, responsive to external humidity, so thickness and refractive index change response relative humidity (RH); this trait can be utilized tune resonance wavelegths resonator. This color filter function as sensor when incorporated with photovoltaic (PV) cell. PV cell transmit input optical spectrum output current, enables...
Ti3O5 films are deposited with the help of an electron beam evaporator for their applications in metasurfaces. The film subwavelength (632 nm) thickness is on a silicon substrate and annealed at 400°C. ellipsometry result shows high refractive index above 2.5 minimum absorption coefficient visible region, which necessary efficiency transparent Atomic force microscopy analysis employed to measure roughness as-deposited films. It seen from micrographs that very smooth prevent scattering losses...
A carbon-based natural nanocomposite material comprising carbon quantum dots (CQDs) is dispersed in a chitosan matrix. The CQD–chitosan serves as solid polymer electrolyte layer of biomemristor with Au/CQD–chitosan/Al structure. active the deposited from its solution on top coplanar asymmetric nanogap (∼15 nm) Al–Au electrodes, patterned via adhesion lithography. presents high on/off ratio (>106) and reproducible reliable bipolar resistive switching behavior. An endurance 160 cycles was...
Ella Gale opened discussion of the introductory lecture by Rainer Waser: At end your talk you introduced complementary resistance switches, which used for binary pattern matching. Do have any insight into how might use these systems to do computation in real number space?
A biocompatible and biodegradable memory device is presented for future medical devices implantable electronics. J.-S. Lee co-workers develop nonvolatile based on natural materials with simple solution processes page 5586. The are decomposed entirely during immersion in water. fabricated fully environmentally benign, good programmable characteristics.
Abstract not Available.
A phase change material (PCM) is implemented in a memristive device as an emerging technology for the next generation of nanoelectronics. In article number 1800360, Junsuk Rho and co-workers develop programmable metallization memristor with simple Ag/phase material/Pt structure using alloy compound Ge, Sb, Te (GST). The performance memory improved by facile nitrogen-dopant method. Reliable reproducible uniform switching characteristics are reported nitrogen-doped GST device.