We demonstrated a proton-based 3-terminal synapse device which shows symmetric conductance change characteristics. Using the optimized device, we successfully confirmed improved classification accuracy of neural networks for on-chip training.

Multiphase (more than three phases) drives possess several advantages over conventional three-phase drives, such as reducing the amplitude and increasing frequency of torque pulsations, rotor harmonic currents, current per phase without voltage phase, lowering dc-link harmonics, higher reliability. By number phases it is also possible to increase power /torque rms ampere for same volume machine. This paper, therefore, presents a simple straightforward approach develop an indirect...

Abstract This study demonstrates an integrate and fire (I&F) neuron using threshold switching (TS) devices to implement spike‐based neuromorphic system. An I&F can be realized the hysteric voltage switch characteristics of a TS device. To investigate effects various on behavior, neurons are compared three different types device: NbO 2 ‐based insulator‐to‐metal transition (IMT) device, B–Te‐based ovonic Ag/HfO atomic‐switching The results show that off‐state resistance time determine...

Minimisation of the loss in induction motor is directly related to choice flux level. The higher level, larger iron loss. But extreme minimisation causes a high copper There an optimal level that guarantees minimisation, and loss-minimisation algorithm (LMA) was derived by many researchers. However, technical problem deriving LMA lies model simplification. A simplification made with voltage dependent source resistance. method extends field-weakening region where current constraints...

In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared examined. First, carry out field turn-on process to form Ag filaments created as a consequence of sequential ions from bottom electrode. During filament formation process, it is observed that show time exponential voltage temperature with different...

In this letter, we demonstrate the conductive-bridging RAM (CBRAM) with excellent multi-level cell (MLC) and linear conductance characteristics for an artificial synaptic device of neuromorphic systems. Our findings show that inherent CBRAM can achieve MLC as a product integer unit conductance. However, uncontrolled metal-ion injection into switching layer results in significant degradation uniformity, leading to classification accuracy. Thus, introduce multi-layer configuration (Cu/HfO <sub...

Abstract Neuromorphic hardware systems emulate the parallel neural networks of human brain, and synaptic weight storage elements are crucial for enabling energy-efficient information processing. They must represent multiple data states be able to updated analogously. In order realize highly controllable devices, replacing high-k gate dielectric in conventional transistor structures with either solid-electrolytes that facilitate bulk ionic motion or ferroelectric oxide allows steady...

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. doped samples shows excellent electrical characteristics such as small variability for 3-bit multilevel per cell (MLC), low power operation good retention properties. Compared control sample, improved can be explained by induced filament confinement.

To improve the classification accuracy of an image data set (CIFAR-10) by using analog input voltage, synapse devices with excellent conductance linearity (CL) and multi-level cell (MLC) characteristics are required. We analyze CL MLC TaOx-based filamentary resistive random access memory (RRAM) to implement device in neural network hardware. Our findings show that number oxygen vacancies filament constriction region RRAM directly controls characteristics. By adopting a Ta electrode (instead...

In this paper, we demonstrate the linear conductance-change characteristics of a conductive-bridging RAM (CBRAM) to be employed as an artificial synapse device in neuromorphic systems. The CBRAM with bilayer electrolyte structure (Cu/Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</sub> S/WO xmlns:xlink="http://www.w3.org/1999/xlink">3-x</sub> /W) exhibits analog switching behavior during depression process due well-controlled dissolution...

In this study, we introduce a lithium (Li) ion-based three-terminal (3-T) synapse device using WO x as channel. Our study reveals key stoichiometry of WO2.7 for excellent synaptic characteristics that is related to Li-ion diffusivity. The open-lattice structure formed by oxygen deficiency promoted injection and diffusion. optimized improved diffusivity were confirmed x-ray photoelectron spectroscopy analysis cyclic voltammetry, respectively. Furthermore, the transient conductance change...

In this letter, we demonstrate a self-limited conductive-bridging random access memory (CBRAM) that removes the necessity for external current compliance in one selector-one resistor (1S1R) architecture. The standard Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (GST) is used as CBRAM switching layer. addition, Te-rich GST also considered. Their performance then compared. Both...

Abstract Conductive bridge random access memory (CBRAM) is a possible replacement for static field‐programmable gate arrays (FPGAs) based on random‐access memory. Ge 2 Sb Te 5 (GST) used in CBRAMs as solid electrolyte due to its high diffusion properties of active ions and scalability obtain high‐density devices. Here, the trade‐off between window uniformity CBRAM GST solved by introducing N atoms into SE. Nitrogen‐incorporated film (N‐GST) proposed current GST‐based with improved...

In this study, we investigate a proton-based three-terminal (3-T) synapse device to realize linear weight-update and I-V linearity characteristics for neuromorphic systems. The conductance states of the 3-T can be controlled by modulating proton concentration in WOx channel. Therefore, estimate dynamic change channel region, which directly affects synaptic behaviors. Our findings indicate that supply an excess number protons from SiO2-H electrolyte low diffusivity result asymmetric...

AgTe/TiN/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS AgTe top electrode showed the high on-current, since Te allows an extraction of Ag out filament. TiN liner also inserted at AgTe/TiO interface prevent in-diffusion into TiO layer during back-end-of-line process. Finally,...

Many advances made in recent years have highlighted Ni-enriched nickel, cobalt, manganese (NCM) material as a prospective positive electrode for lithium-ion batteries. However, prolonged cycling is limited by several critical issues, including surface instability, gas generation, and transitional metal dissolution upon cycling. Here, we propose simple interfacial modification approach that uses 1H,1H,2H,2H-perfluorooctyltriethoxysilane (POS) coating precursor to improve stability. A one-step...

The effects of liner thickness on the reliability AgTe/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based threshold switching (TS) devices were investigated. off-state current an /Pt TS device was found to be significantly increased by in-diffusion Ag into TiO layer during annealing process. Therefore, 3-, 5- and 7-nm TiN liners introduced compared prevent Ag. While 3-nm shown incapable blocking layer, effectively suppressed...

The origins of the nonlinear and asymmetric synaptic characteristics TiO x -based synapse devices were investigated. Based on origins, a microstructural electrode was utilized to improve characteristics. Under an identical pulse bias, device exhibited saturated conductance changes, which led formation interfacial layer between layer, can limit consecutive oxygen migration chemical reactions, considered as main origin saturation behavior. To achieve structural engineering utilized. resultant...

We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity TaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> -based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization simulations, we link characteristics (linear or nonlinear I-V) microscopic properties conductive filament (CF). Our findings indicate that...

The effect of the interfacial layer on reliability and off-current a C-Te-based Ovonic threshold switching (OTS) device is investigated. By introducing an amorphous Ge (a-Ge) between both top bottom electrodes OTS film, nearly 2-order reduction confirmed. This could be attributed to formation virtual electrode in a-Ge that can scale down effective area localize electric field specific region. Area independent current-voltage characteristics were observed introduced while without barrier...

Hardware neural networks (HNNs) which use synapse device (SD) arrays show promise as an approach to energy efficient parallel computation of massive vector-matrix multiplication. To maximize the inference accuracy application-specific HNNs, we propose a highly reliable 2-terminal SD with fixed resistance based on WOx films. First, investigate requirements array-based HNN through MATLAB and SPICE simulations taking into account parasitic effects in array. On top that, fabricate utilize...

To realize a steep-slope-FET with low leakage current and operating bias, we engineered two types of atom-switch devices integrated them silicon MOSFET. The atom-switch-FET exhibits extremely (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> μA/μm), high I <sub xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratio (> 10 xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ),...

In this paper, we propose a one transistor-two resistive RAM (RRAM) (1T2R) device to overcome the non-ideal switching behavior of artificial synapse devices, such as unidirectional and abrupt change in conductance. Our findings reveal that 1T2R can exhibit bidirectional conductance changes using RRAMs. Thus, introduce but analog Cu-based RRAM (Cu/Cu2-X S/WO3-X /W) having an internal voltage suppressor (Cu2-X S) realize device. The synaptic behaviors are calculated subthreshold region...

In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The induced limited Cu ion injection during set process due to Cu-Te bonding and N-doping in layer. addition, joule heating confinement resulting from low-thermal-conductivity led low-residual conductive filament after reset process. As result, on/off ratio device increased 102 105. Furthermore, variability switching parameters such as...