Abstract This study demonstrates an integrate and fire (I&F) neuron using threshold switching (TS) devices to implement spike‐based neuromorphic system. An I&F can be realized the hysteric voltage switch characteristics of a TS device. To investigate effects various on behavior, neurons are compared three different types device: NbO 2 ‐based insulator‐to‐metal transition (IMT) device, B–Te‐based ovonic Ag/HfO atomic‐switching The results show that off‐state resistance time determine...

SnSe emerges as a new class of thermoelectric materials since the recent discovery an ultrahigh figure merit in its single crystals. Achieving such performance polycrystalline counterpart is still challenging and requires fundamental understandings electrical thermal transport properties well structural chemistry. Here we demonstrate strategy improving conversion efficiency bulk thermoelectrics. We show that PbSe alloying decreases transition temperature between Pnma Cmcm phases thereby can...

Various kinds of nanostructured materials have been extensively investigated as lithium ion battery electrode derived from their numerous advantageous features including enhanced energy and power density cyclability. However, little is known about the microscopic origin how nanostructures can enhance storage performance. Herein, we identify in anatase TiO2 nanostructure report a reversible stable route to achieve capacity TiO2. We designed hollow composed interconnected ∼5 nm sized...

The transition metal oxide, NbO2, which exhibits an insulator to (IMT) is regarded as a promising selector device be integrated with resistive memory for cross point array application. In this study, we comprehensively investigated the scaling of NbO2 using mushroom structure. A thorough understanding behavior forming voltage (Vf), threshold (Vth), and current (Ith) essential evaluate potential well selectivity selector. Importantly, by analyzing trend current, believed that IMT strongly...

Although sodium ion batteries (NIBs) have gained wide interest, their poor energy density poses a serious challenge for practical applications. Therefore, high-energy-density cathode materials are required NIBs to enable the utilization of large amount reversible Na ions. This study presents P2-type Na0.67Co1–xTixO2 (x < 0.2) with an extended potential range higher than 4.4 V present high specific capacity 166 mAh g–1. A group cathodes containing various amounts Ti is prepared using facile...

NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that IMT behavior follows field-induced nucleation by investigating delay time dependency at various voltages and temperatures. Based on investigation, reveal origin leakage current in NbOx is partly insufficient Schottky barrier height originating from interface defects between electrodes layer. The problem can be...

In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared examined. First, carry out field turn-on process to form Ag filaments created as a consequence of sequential ions from bottom electrode. During filament formation process, it is observed that show time exponential voltage temperature with different...

In this research, we investigate an electroforming and electrically driven insulator-metal transition (E-IMT) characteristic of the NbOx film that follows framework nucleation theory. First, carry out process to form crystalline NbO2 phase, it separated grain-growth according external electric field degree. During process, also study field-induced occurred selectively crystallinity films. We conclude E-IMT was result Peierls between tetragonal rutile phases, experimentally deduce minimum...

In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable reproducible conductance states integer multiples fundamental obtained by optimizing voltage rate Ti-diffusion barrier (DB) at Cu/HfO2 interface. Owing to controlled diffusion Cu ions Ti-DB optimized rate, through which it was possible control time delay ion reduction, more than seven levels discrete were clearly observed....

Abstract The development of selector devices is essential for the implementation dense memory arrays. Ovonic threshold switch (OTS) have gained interest as high‐performance selectors, but their material complexity and low thermal stability remain concerns. effect element compositions its types on binary telluride‐based OTS are investigated to develop selectors that meet simple composition high requirements while ensuring OFF‐state leakage current ( I OFF ). Through a careful control Te in...

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed exhibits outstanding performance such as high ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), fast operating speed of <10 ns (transition time <2 and delay <8 ns), endurance (109), thermal stability (>450 °C). The observed is caused by the relatively small atomic size C, compared Te, which can effectively suppress segregation...

A high-performance optical microscanner with a resonance frequency over 20 kHz and scan angle (peak-to-peak value) 30° in atmospheric ambient, was successfully fabricated by deposit piezoelectric materials at high rate the AD method onto metal scanner structure, which mechanical machining. The is applicable to SVGA high-resolution display of 800×600 or more. This powerful tool for realizing ceramic integration components.

A 3D high-density switching device is realized utilizing titanium oxide, which the most optimum material, but not practically demonstrated yet. The 1S1R (one ReRAM with developed device) exhibits memory characteristics a significantly suppressed sneak current, can be used to realize applications.

AgTe/TiN/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS AgTe top electrode showed the high on-current, since Te allows an extraction of Ag out filament. TiN liner also inserted at AgTe/TiO interface prevent in-diffusion into TiO layer during back-end-of-line process. Finally,...

(K0.44Na0.52Li0.04)(Nb0.86Ta0.10Sb0.04)O3 (LF4) thick films were directly prepared on glass, stainless-steel and Pt/Ti/ZrO2 substrates at room temperature by the aerosol deposition method (ADM). The effects of moisture content in starting powder postdeposition annealing dielectric properties LF4 film investigated. using preheated (moisture 0.006%) has with high stability increasing frequencies, whereas non-preheated powders (0.21%) a constant that decreases abruptly higher frequencies. When...

In this letter, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of transistor. The newly B-Te-based shows excellent characteristics such as low operating voltage, leakage current, abrupt turn-on/off slope, fast switching speed, high endurance, thermal stability. Due to great properties B-Te OTS device, transistor exhibits subthreshold swing less than 10 mV/dec on/off current ratio...

We investigate the effect of Cu concentration On-state resistance retention characteristics W/Cu/Ti/HfO2/Pt memory cell. The development RRAM device for application depends on understanding failure mechanism and key parameters optimization. In this study, we develop analytical expression cations (Cu+) diffusion model using Gaussian distribution detailed analysis data time at high temperature. It is found that improvement not only conductive filament (CF) size but also atoms density in CF....

This study was undertaken to investigate crop productivity, nitrogen use efficiency (AE_N, agronomic of N; ARF_N, apparent recovery fraction N), and nitrous oxide (N2O) emission after biochar (BB, bamboo biochar) fertilizer (N) application in paddy upland agricultural soils. The selected rice Chinese cabbage were grown the soil soil, respectively. Each treatment group, comprising N100% (N, 90 kg ha−1 for rice; 320 cabbage), BB + N35%, N70%, N100%, separated by a Control treatment. Overall,...

In this article, we investigate dynamics of electrically driven abrupt and volatile resistive switching characteristics, which are called threshold (TS) in insulator-to-metal transition NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> switch, BTe -based ovonic Ag-based atomic switch by adopting field-induced nucleation theory. To verify phenomena the initial electroforming TS processes devices, apply constant square voltage pulses...