- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Advanced Thermoelectric Materials and Devices
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Graphene and Nanomaterials Applications
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Advanced Photocatalysis Techniques
- Carbon Nanotubes in Composites
- Electronic and Structural Properties of Oxides
- Advanced Sensor and Energy Harvesting Materials
- Advancements in Battery Materials
- Advancements in Photolithography Techniques
- Organic and Molecular Conductors Research
- Analytical Chemistry and Sensors
- Luminescence Properties of Advanced Materials
Sungkyunkwan University
2017-2024
Suwon Research Institute
2018
Abstract In this work, high‐quality 1D van der Waals (vdW) Nb 2 Pd 3 Se 8 is synthesized, showing an excellent scalability from bulk to single‐ribbon due weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that novel a semiconducting material, displaying indirect‐to‐direct bandgap transition with decreasing the number unit‐ribbons single. Field effect transistors (FETs) fabricated on mechanically exfoliated nanowires exhibit n‐type transport...
Chemical vapor transport (CVT) is a commonly used method for growing single crystals. Halogens and their compounds are widely employed as agents owing to low sublimation points. To increase the yield of produce, this study explored species type amount well synthesis temperature time achieve maximum optimization process Ta2Pd3Se8 nanowires. Four agents, namely, PdCl2, PdBr2, I2, Se, were thermodynamically analyzed compared, PdCl2 was deemed most suitable agent field-effect transistor...
Mass production of one-dimensional, V₂Se₉ crystals, was successfully synthesized using the solid-state reaction vanadium and selenium. Through mechanical exfoliation method, bulk crystal easily separated to nanoribbon structure we have confirmed that as-grown crystals consist innumerable single chains linked by van der Waals interaction. The exfoliated flakes can be controlled thickness repeated-peeling method. In addition, atomic thick also obtained on a 300 nm SiO₂/Si substrate. Scanning...
Tailoring the electrical properties of one-dimensional (1D) van der Waals (vdW) materials is desirable for their applications toward electronic devices by exploiting unique characteristics. However, 1D vdW have not been extensively investigated modulation properties. Here we control doping levels and types Nb2Pd3Se8 over a wide energy range immersion in AuCl3 or β-nicotinamide adenine dinucleotide (NADH) solutions, respectively. Through spectroscopic analyses characterizations, confirm that...
A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous chains linked by van der Waals interactions, we confirmed that bundle of can be easily separated mechanical cleavage. The exfoliated flakes exhibit quasi-two-dimensional layered structure, the number layers controlled using repeated-peeling method. work function varied depending thickness as...
Abstract In this study, high‐purity and centimeter‐scale bulk Ta 2 Ni 3 Se 8 crystals are obtained by controlling the growth temperature stoichiometric ratio between tantalum, nickel, selenium. It is demonstrated that could be effectively exfoliated into a few chain‐scale nanowires through simple mechanical exfoliation liquid‐phase exfoliation. Also, calculation of electronic band structures confirms semiconducting material with small bandgap. A field‐effect transistor successfully...
Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) materials, celebrated for their advantageous properties, characterized by reduced dimensionality the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D material, assess its suitability field-effect transistor (FET)...
The fundamental issues related to the formation of mechanical cracks and chemical residue during transfer process large-area CVD graphene by polymeric carrier-films are addressed in this work.
Centimeter‐size single‐crystalline Nb 3 I 8 , a new family of two‐dimensional materials, is first synthesized by vapor transport reaction niobium and iodine. Through the mechanical exfoliation method, bulk crystal cleaved to monolayer multi‐layered flakes. It confirmed consist numerous monolayers bonded weak van der Waals interaction. By utilizing atomic force microscopy (AFM) scanning Kelvin probe (SKPM), information on structure electrical properties obtained at same time. The analysis...
Dangling-bond-free two-dimensional (2D) materials can be isolated from the bulk structures of one-dimensional (1D) van der Waals to produce edge-defect-free 2D materials. Conventional have dangling bonds on their edges, which act as scattering centers that deteriorate transport properties carriers. Highly anisotropic sheets, made 1D Nb2Se9 material, three planar depending cutting direction crystal. To investigate applications these we calculated band sheets and observed two had nearly direct...
Recently, ternary transition metal chalcogenides Ta2X3Se8 (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, Ta2Pd3Se8 has been actively studied owing to its excellent charge transport properties an n-type semiconductor and ultralong ballistic phonon properties. Compared subsequent studies on the Pd-containing material, Ta2Pt3Se8, another member this materials considerably less explored despite promising...
Chemical vapor deposition (CVD) of graphene on catalytic metal substrates is the most common and widely used method for uniform growth graphene. However, this limited to large-scale applications because requirement an additional step transferring CVD required substrates. The direct graphene-based materials arbitrary essential completely realize full potential graphene's exceptional electrical chemical properties. In study, we provide a novel approach metal–organic (MOCVD) three-dimensional...
Needle-like single crystalline wires of TaSe3 were massively synthesized using the chemical vapor transport method. Since wedged-shaped molecular chains stacked along b-axis by weak van der Waals interactions, a few layers flakes could be easily isolated typical mechanical exfoliation The exfoliated had an anisotropic planar structure, and number controlled repeated peeling process until monolayer nanoribbon was obtained. Through atomic force scanning Kelvin probe microscope analyses, it...
In this study, Nb2Se9, a one-dimensional (1D) material with van der Waals (vdWs) bonding, was synthesized by chemical vapor deposition (CVD). A liquid precursor used to overcome the difficulty of controlling length and density Nb2Se9 CVD due high melting point Nb. Growth proceeded horizontally in nano-ribbon shape on substrate [100] direction, which had most stable bonding distance, resulting preferred orientation (010) plane out-of-plane axis. Unlike that grown conventional mechanical or...
We developed a Nb 3 Cl 8 -based photodetector with negative photoconductivity from 400 to 1050 nm, featuring high electron mobility, strong I on /I off ratio, and responsivity, making it ideal for energy-efficient optoelectronic applications.
A one-dimensional (1D) crystal structure was grown in the edge direction to form a nanowire, similar 2D materials an plane with dangling bonds nanosheet. In this study, Nb2Se9, 1D van der Waals (vdW) material, on substrate using linear physical space via liquid-precursor-assisted chemical vapor deposition (CVD) process. Nb2Se9 nanowires millimeter scale along scratch SiO2 showed non-epitaxial growth, and aligned oriented vicinal surface of m-plane sapphire. The density precursor flow rate H2...
Nb 2 Pd 3 Se 8 wires were successfully synthesized using different metal precursors (niobium and palladium) through liquid precursor-intermediated chemical vapor deposition (LPI-CVD).