A5000469631- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Semiconductor materials and devices
- Additive Manufacturing and 3D Printing Technologies
- Smart Agriculture and AI
- Aluminum Alloys Composites Properties
- Remote Sensing in Agriculture
- Microfluidic and Capillary Electrophoresis Applications
- Advanced ceramic materials synthesis
- Ferroelectric and Piezoelectric Materials
- Metal Alloys Wear and Properties
- Advanced Materials Characterization Techniques
- RNA Interference and Gene Delivery
- Extracellular vesicles in disease
- Diamond and Carbon-based Materials Research
- Innovative Microfluidic and Catalytic Techniques Innovation
- Catalytic Processes in Materials Science
- Silicone and Siloxane Chemistry
- Advanced materials and composites
- TiO2 Photocatalysis and Solar Cells
- Microstructure and Mechanical Properties of Steels
- CCD and CMOS Imaging Sensors
- Nuclear materials and radiation effects
- Tribology and Wear Analysis
Pohang University of Science and Technology
2014-2018
Korea Post
2014
We propose TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive switching device for neuromorphic synapse applications. This is capable of 64-levels conductance states because their optimized interface between the metal electrode and TiOx film. To compensate change in power with increasing pulse number, we use fixed voltage current pulses potentiation depression conditions, respectively. By adopting a hybrid scheme,...
Artificial exosomes of ~100 nm diameter, enclosed with lipid bilayers, are fabricated from living cells and transfer biological signal components such as encapsulated RNAs proteins, plasma membrane or both.
In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that MLC relates size conductive filament involved in movement oxygen...
We report on a 1-transisor/2-resistor (1T2R) synapse device with improved conductance linearity and ratio under an identical pulse condition for hardware neural networks high pattern-recognition accuracy. Utilizing additional series-connected resistor, the of was significantly owing to reduced initial voltage drop resistive RAM (RRAM) during depression conditions. Moreover, maximize device, we utilized steep subthreshold region MOSFET by parallel connection RRAM transistor. A small change in...
We investigate the effect of Cu concentration On-state resistance retention characteristics W/Cu/Ti/HfO2/Pt memory cell. The development RRAM device for application depends on understanding failure mechanism and key parameters optimization. In this study, we develop analytical expression cations (Cu+) diffusion model using Gaussian distribution detailed analysis data time at high temperature. It is found that improvement not only conductive filament (CF) size but also atoms density in CF....
We demonstrate a selector device with excellent performances (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> > 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> A/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising characteristics were achieved in fully CMOS compatible stack (W/Ta xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...
We implemented a convolution operation in convolutional neural network by introducing 3-D integrated TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive switching device (RSD) array to act as the kernel. The RSD exhibits gradual SET/RESET behavior, which enables multilevel characteristics. A pair of layers structured is used achieve positive and negative weights. Based on these results, we demonstrated 3 × Laplace kernel...
We investigated the reset breakdown phenomenon of HfOx-based resistive memory for reliable switching operation in a fully CMOS compatible stack. Through understanding on effect electrode materials and device area, our findings show that observed failure is attributed to additional oxygen vacancies close interface, where occurred. Therefore, RuOx serving as an diffusion barrier was introduced suppress generation unwanted by preventing out-diffusion through electrode. As result, significantly...
Mechanical properties of Y2O3-containing tetragonal ZrO2 polycrystals(Y-TZP) were investigated. Several additives used to modify the hardness and fracture toughness Y-TZP. The effects these individual discussed their interactions also analysed. Each additive, such as CoO, Fe2O3, MnO2 was found deteriorate mechanical Y-TZP when it singly. But significantly improved Al2O3 added in combination at a certain ratio. addition Fe2O3 into resulted more complex behavior hardness. specimen with 1.5...