Kinetic-energy distributions are presented for ions sampled from 13.56-MHz discharges in argon a capacitively-coupled, parallel-plate, Gaseous Electronics Conference (GEC) radio-frequency reference cell. The cell was modified to allow sampling of through an orifice the grounded electrode. Ar+, Ar++, Ar+2, ArH+, and several trace plasma pressures ranging 1.3 Pa, where ion-atom collisions sheath not important, 33.3 important. Applied peak-to-peak (rf) voltages 50, 100, 200 V were used, current...

Doppler-broadened Hα emission (656.28 nm) detected from a 13.56 MHz, parallel-plate, radio-frequency discharge in hydrogen indicates the presence of fast excited H atoms throughout volume. Time and spatially resolved measurements indicate that are formed primarily at surface powered electrode with kinetic energies exceeding 120 eV.

Excited neutrals and fast ions produced in a 13.56 MHz radio-frequency discharge 90% argon −10% hydrogen gas mixture were investigated, respectively, by spatially temporally resolved optical emission spectroscopy, mass-resolved measurements of ion kinetic energy distributions at the grounded electrode. The electrical characteristics also measured comparisons are made with results obtained for discharges pure H2 under comparable conditions. Measurements Balmer-alpha (Hα) show...

Plasma process control applications require acquisition of diagnostic data at a rate faster than the characteristic timescale perturbations to plasma. Diagnostics based on optical emission spectroscopy intense lines permit rapid noninvasive measurements with low-resolution (∼1 nm), fiber-coupled spectrographs, which are included many plasma tools for semiconductor processing. Here authors report analysis Ar emissions such system obtain electron temperatures, densities, and metastable...

Kinetic-energy distributions have been measured for different mass-selected ions sampled from 13.56 MHz rf glow discharges in argon inside a ‘‘GEC reference cell.’’ The electrode geometry of this cell produces an asymmetric discharge and the is operated pressure regime where ion-molecule collisions sheath region are significant. Ions side plasma perpendicular to interelectrode axis using electrostatic energy analyzer coupled quadrupole mass spectrometer. Ar+, Ar2+, Ar++, ArH+ presented as...

Vacuum ultraviolet (VUV) photons emitted from excited atomic states are ubiquitous in material processing plasmas. The highly energetic can induce surface damage by driving reactions, disordering regions, and affecting bonds the bulk material. In argon plasmas, VUV emissions due to decay of 1s4 1s2 principal resonance levels with emission wavelengths 104.8 106.7 nm, respectively. authors have measured number densities atoms two using both white light optical absorption spectroscopy...

In this paper we present experimental results obtained for a rf discharge in SF6 and with Ar and/or N2. The data power dependence of some emission lines usually used actinometry are acquired their applicability excitation kinetics discussed. We also the spatial (time averaged) variations lines. From such high-energy tail electron energy distribution function may be obtained.

A review is presented of kinetic-energy distribution measurements for ions striking grounded surfaces in a Gaseous Electronics Conference (GEC) rf Reference Cell.Two experimental arrangements that have been used to measure ion energies the GEC Cell are described, and comparison their performance under different operating conditions presented.Significant results from ion-energy analysis highlighted, including evidence effects due surface on sampling, verification electrical behavior cell,...

Vacuum ultraviolet (VUV) emissions from excited plasma species can play a variety of roles in processing plasmas, including damaging the surface properties materials used semiconductor processing. Depending on their wavelength, VUV photons easily transmit thin upper dielectric layers and affect electrical characteristics devices. Despite importance, measuring fluxes is complicated by fact that few at wavelengths, both detectors windows are damaged exposure. The authors have previously...

As semiconductor devices continue to shrink in size, demands for the formation of ultra-shallow junctions (USJ) are increasing. Pulsed plasma doping (P/sup 2/LAD) has emerged as a scaleable and cost effective solution dopant delivery, since it is capable high dose rates at ultra-low energies (0.02-20 kV). In P/sup 2/LAD, pulsed generated adjacent silicon wafer using biases. Typical pulse widths range between 5 50 /spl mu/s, repetition 100 10000 Hz. Time-resolved Langmuir probe measurements...

Particulate generation has been studied during reactive-ion etching of oxide wafers in C2F6-CHF3 and CF4-CHF3 plasmas using both a commercial etch tool the GEC reference cell modified to resemble tool. Under certain discharge process conditions, copious amounts submicrometre-sized particles are shown form due plasma interactions with substrate. In tool, were detected only by downstream particle flux monitor, whereas cell, observed situ laser light scattering monitoring. etched end-point...

Discharge parameters in a pulsed dc plasma doping system have been studied using measurements of time-resolved ion energy distributions, relative density, potential, and electron temperature BF3 Ar plasmas during active discharge afterglow periods. Negative potentials are observed when hollow cathode to create while implanting at ultralow energies (<500eV). The kinetics generation decay the pulse on off periods discussed.

For the first time, scaled PMOS MUGFET devices with TiCN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sub> gate stack is doped specific pulsed plasma doping processes. This paper highlights key benefit brought by conformal source/drain extensions, demonstrates how process can be tuned to dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 μA/μm @ I...

Evidence is presented for a significant influence of electrode surface material and condition on the measurement kinetic energies ions sampled from discharges through an orifice in electrode. Significant differences ion energy shifts and/or discrimination low-energy are found using aluminum stainless-steel electrodes radio-frequency (rf) discharge cell. It argued that observed may be attributable part to charging oxide layers around sampling orifice.

Abstract The AlF band spectrum in emission and absorption has been examined. This occured as the result of chemical reactions between Al 2 O 3 C F 4 , taking place an arc plasma. It was used special light source – horizontal DC for estimation this spectra.

Particle "dust" in processing plasmas is of critical concern to the semiconductor industry because threat particles pose device yield. A number important investigations into formation, growth, charging, transport and consequences particulate dust have been made using Gaseous Electronics Conference Reference Cell as reactor test-bed. The greatest amount work date has directed toward a better understanding role that electrostatic, ion drag, neutral fluid drag gravitational forces play...

Translational kinetic-energy distributions of mass-selected ions have been measured in diffuse, low-current Townsend-type discharges at high electric field-to-gas density ratios (E/N) the range 1\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}18}$--2\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}17}$ V ${\mathrm{m}}^{2}$ (1--20 kTd). The were generated Ar and ${\mathrm{N}}_{2}$ under uniform-field conditions ion energies using a cylindrical-mirror energy...

The authors present measurements of the electron energy distribution functions (EEDF) for electrons in argon discharges at moderate and high E/N values (E being electric field N gas density), homogeneous fields a low-current diffuse glow regime. Results were obtained to density ratios (E/N) from 500 Td 50 kTd (1 Td=10-21 V m2). A multigrid analyser with retarding grid potential was used measure sampled through an aperture anode. Experimental data are make comparison two-term Boltzmann...

In traditional beamline implantation, the incident ion mass and energy are well known parameters simulation programs available to predict implant profiles. plasma based all ionized species present in extracted implanted by applying negative voltage pulses wafer. Therefore, prediction of profile is more complicated since it requires knowledge relative abundance each as their distribution prior entering wafer surface. This information not readily using conventional characterization techniques...

In this paper we use experimental data (Radovanov S. and Godet L., J. Phys.: Conf. Ser., 71 (2007) 012014) for time-resolved electron energy distribution function in boron trifluoride (BF3) discharges together with cross-sections excitation processes attachment order to explain dynamics the pulsed plasma doping system. A Monte Carlo simulation (MCS) was used perform calculations of probability (EEPF) DC electric fields as found practical implantation devices. It that afterglow, field is not...

The purpose of this paper is the characterization a plasma-doping system in BF3. Energy distributions (IEDs) boron ions crossing high-voltage sheath (up to 1 kV) are measured BF3 plasma under different experimental conditions. It demonstrated that relative percentages reaching cathode and IED shapes governed by number collisions inside sheath. Heavy molecular , dissociated light (B+, BF+) created. Based on results ab initio calculations ion structures, mechanisms occurring discussed....