A5047929835- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Optical Sensing Technologies
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Photonic and Optical Devices
- Atomic and Subatomic Physics Research
- Thin-Film Transistor Technologies
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- Neutrino Physics Research
- Advanced Semiconductor Detectors and Materials
- Dark Matter and Cosmic Phenomena
- Radiation Detection and Scintillator Technologies
- ZnO doping and properties
- Advanced Fluorescence Microscopy Techniques
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Quantum Information and Cryptography
- Optical Imaging and Spectroscopy Techniques
- Geoscience and Mining Technology
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
University of California, San Diego
2022-2025
National University of Singapore
2019-2025
Guangdong University of Technology
2022
Peking University
2014
Hunan University
2007
Hunan Communications Research Institute
2007
We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula> -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our -IGZO FeTFTs have metal–ferroelectric–metal–insulator–semiconductor (MFMIS) stru- cture Zr-doped HfO...
We demonstrate nonvolatile and area-efficient ternary content-addressable memories (TCAMs) featuring amorphous indium–gallium–zinc–oxide (a-IGZO) ferroelectric field-effect transistors (FeFETs) with excellent electrical characteristics. An extremely large sensing margin of the TCAM array is achieved due to current ON/OFF ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{ \mathrm{\scriptscriptstyle...
In this work, the influence of fin-slanted angles (α) on electrical performance lateral β-Ga2O3 MOSFETs was investigated through a combination experiments and Sentaurus TCAD simulations. The devices demonstrated enhancement-mode characteristics with an on/off ratio around 107. increment in α resulted improved drain-to-source current (IDS) extrinsic transconductance (Gm). voltage-blocking also showed significant enhancement increasing due to mitigation edge crowding, achieving 40% increase...
Liquid xenon (LXe) is a well-studied detector medium to search for rare events in dark matter and neutrino physics. Two-phase time projection chambers (TPCs) can detect electronic nuclear recoils with energy down kilo-electron volts (keV). In this paper, we characterize the response of single-phase liquid proportional scintillation counter (LXePSC), which produces electroluminescence directly liquid, at low energies. Our design uses thin (10 - 25 $\mu$m diameter), central anode wire...
We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> -IGZO NW-FETs) featuring an ultrascaled width notation="LaTeX">${W}_{{\mathrm {NW}}}$ ) down to ~20 nm. The device with 100 nm channel length notation="LaTeX">${L}_{{\mathrm {CH}}}$ and ~25 achieves a decent subthreshold...
In this work, we report bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) transistors with extremely scaled channel length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CH</inf> ) down to 12.3 nm enabled by a novel Al xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /HSQ dual-layer lift-off technique. Thanks the smallest L of among all IGZO transistors, record high peak extrinsic...
We report the back-end-of-line (BEOL)-compatible 3-D oxide semiconductor (OS) fin-gate ferroelectric field-effect transistors (Fe-FETs) featuring atomic layer deposition (ALD)-grown zinc (ZnO) channel and Zr-doped HfO2 (HZO) dielectric. Both ZnO HZO are able to conformally cover fin-shaped tungsten (W) metal gate with uniform thickness on all surfaces. With optimization of ALD for growth film extensive gate-stack engineering, our Fe-FETs show excellent electrical characteristics, including...
For the first time, a novel amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) anti-ferroelectric field-effect transistor (AFeFET)-based leaky integrate-and-fire (LIF) neuron is experimentally demonstrated, emulating both excitatory and inhibitory input connections with capacitor-free design. By co-integrating a-IGZO ferroelectric transistors (FeFETs) as synapses, spiking neural networks (SNNs) high biomimetic low hardware costs could be implemented. The highlights of this work include: (1)...
The dual-phase xenon time projection chamber (TPC) is a leading detector technology in rare event searches for dark matter and neutrino physics. success of this type relies on its capability to detect both primary scintillation ionization signals from particle interactions liquid (LXe). electrons are converted into electroluminescence the gas (GXe), where single electron can be amplified by more than 100 times number photons strong electric field. Maintaining uniform field small gap large...
We present a novel, to the best of our knowledge, InGaAs/InAlAs single-photon avalanche diode (SPAD) with triple-mesa structure. Compared traditional mesa structures, horizontal distribution electric field decreases dramatically, while peaks at edges are well eliminated in structure, leading an excellent suppression surface leakage current and premature breakdown. Furthermore, temperature coefficient breakdown voltage was measured be as small 37.4 mV/K within range from 150 270 K....
Abstract We have demonstrated the integrated indium gallium arsenide/indium aluminum arsenide (InGaAs/InAlAs) single-photon avalanche diodes (SPAD) with silicon (Si) waveguides and grating couplers on Silicon-on-insulator substrate. A vertical coupling scheme is adopted which allows use of a thick bonding interlayer for high yield. The epoxy ‘SU-8’ selected to be adhesion layer low transmission loss, volumetric shrinkage, curing temperature. In addition, both hybrid heterogeneous integration...
A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from extraction of specific contact resistivity Pc in metal/semiconductor contact. The proposed MRA-TLM verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior accuracy as compared conventional TLM-based method achieved. experimentally demonstrated metal/p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A ladder transmission line model (LTLM) that features capability to eliminate parasitic metal resistance from contact and access electrodes, a simple fabrication process, sub-10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> Ω·cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> resolution is demonstrated for accurate extraction of the specific resistivity ρ <sub xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> . The proposed LTLM...
Abstract 3D NAND has been enabling continuous density and cost scaling beyond conventional 2D since sub‐20‐nm nodes. However, its poly‐Si channel suffers from low mobility, instability caused by grain boundaries, large device‐to‐device variations in electrical characteristics at highly scaled device dimensions. These drawbacks can be overcome introducing an amorphous indium‐gallium‐zinc‐oxide ( a ‐IGZO) channel, which the advantages of ultralow OFF current, back‐end‐of‐line compatibility,...
For the first time, complementary FinFETs and tunneling (TFFETs), with fin width (WFin) of 20 nm height (Hfin) 50 nm, were co-integrated on same substrate, enabled by formation high-quality GeSn-on-insulator (GeSnOI) substrate 200 mm wafer size. Decent electrical characteristics realized for both GeSn n-and p-channel TFFETs. We also performed simulation studies to show promise GeSnOI platform, which is not only able suppress off-state leakage current improve Ion/Ioff ratio FETs, but can...
For the first time, we report back-end-of-line (BEOL)-compatible 3D fin-gate oxide semiconductor (OS) ferroelectric field-effect-transistors (Fe-FETs) featuring ALD-deposited ZnO channel and Zr-doped HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) dielectric with a length (L xmlns:xlink="http://www.w3.org/1999/xlink">ch</inf> ) as small 50 nm. Both HZO are able to conformally cover fin-shaped W metal gate uniform thickness on...
Tackling the key challenge of weak erase in oxide semiconductor (OS) FeFETs, for first time, we experimentally demonstrate a back-end-of-line (BEOL)-compatible IGZO-based ferroelectric-modulated diode (FMD), which effectively doubles memory window (MW) FeFET fabricated under same process conditions. To provide clear understanding MW enhancement, develop and establish comprehensive simulation framework that reveals interplay between ferroelectric polarization current rectified by metal-...
The thermal stability and contact property of Ti/p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Ge <sub xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> are investigated for the first time. segregation is observed under Ti/GeSn interface after post-metal anneal (PMA). specific resistivity Pc decreases significantly PMA. Ultra-low 9.3 x 10...
We report the first demonstration of active boron (B) doping concentration $\left(N_{A}\right)$ higher than $2.50 \times 10^{21} \mathrm{~cm}^{-3}$ in high Ge content (> 65%) Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> using In-situ growth technique with a low temperature below 500 °C. achieve excellent uniformities thickness and resistivity across entire 300 mm wafer obtain an...
We report a monolithic waveguide integrated Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.92</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.08</sub> /Ge multiple-quantum-well (MQW) photodetector (PD) on the 300-mm Si wafer for <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2 \mu \text{m}$ </tex-math></inline-formula> wavelength detection and optoelectronic circuits. take advantage of layer...