A. Salahouelhadj

ORCID: 0000-0002-3795-1446
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About
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Research Areas
  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Metallurgy and Material Forming
  • Additive Manufacturing and 3D Printing Technologies
  • Advanced Surface Polishing Techniques
  • Metal Forming Simulation Techniques
  • Composite Material Mechanics
  • Advanced Materials and Mechanics
  • Microstructure and mechanical properties
  • Semiconductor materials and devices
  • Numerical methods in engineering
  • Thermal properties of materials
  • Copper Interconnects and Reliability
  • Structural Load-Bearing Analysis
  • Metal and Thin Film Mechanics
  • Innovations in Concrete and Construction Materials
  • Advanced ceramic materials synthesis
  • Low-power high-performance VLSI design
  • Aluminum Alloys Composites Properties
  • Adhesion, Friction, and Surface Interactions
  • VLSI and FPGA Design Techniques
  • Laser and Thermal Forming Techniques
  • High-Velocity Impact and Material Behavior
  • Integrated Circuits and Semiconductor Failure Analysis
  • Surface Roughness and Optical Measurements

IMEC
2015-2024

KU Leuven
2015

Laboratoire d'Étude des Microstructures et de Mécanique des Matériaux
2011-2014

Imec the Netherlands
2014

Centre National de la Recherche Scientifique
2007-2010

Université Sorbonne Paris Nord
2007-2010

Université Paris Cité
2007

The rapid growth of data bandwidth required between logic and memory chips for next generation device nodes is progressively pushing low I/O count serial busses to their limits. To further satisfy this increasing need high rates, wider are now being developed established. Over the past years, various Fan-Out Wafer-Level-Packaging (FOWLP) approaches have been answer needs mentioned above increasingly demanding function integration on package. Imec has working a novel 300mm concept that...

10.1109/ectc.2018.00063 article EN 2018-05-01

In this work the mechanical stress induced in 3D stacks by different packaging process steps is studied. The used are assembled using two identical dies containing a number of sensors which designed and manufactured 65nm technology. It observed that contribution package substrate die-attach to redistribution inside stacked IC more significant than one EMC influence on shape amplitude local around inter-die interconnects (micro-bumps) not significant. These observations supported measurements...

10.1109/ectc.2015.7159617 article EN 2015-05-01

3D stacked IC (SIC) vs. Interposer wafer processing and assembly challenges are discussed in this paper. We report on the key enabling technologies like thinning, thin handling, TSV, micro bumping, package stacking packaging. The limited bump yield loss SIC case is explained by modeling of bonding force distribution. It also shown that for sequential a NiB cap Cu bumps heavily increasing yield.

10.1109/3dic.2014.7152146 article EN 2014-12-01

In this paper, we present the design of a passive test chip with thermal structures in Metal 1 layer back-end Line (BEOL) for experimental characterization inter-die resistance wafer-pairs fabricated by hybrid Cu/dielectric wafer-to-wafer bonding. The include heater elements and temperature sensors. measurement data is combined modeling study to extract bonded interface wafer pair. extracted die-die created bonding compared literature on µbump stacking. low thin dielectric indicates that...

10.1109/itherm.2016.7517703 article EN 2016-05-01

In this paper, we present the design of a passive test chip with thermal structures in Metal 1 layer back-end line (BEOL) for experimental characterization intertier resistance wafer-pairs fabricated by three-dimensional (3D) hybrid Cu/dielectric wafer-to-wafer (W2W) bonding. The include heater elements and temperature sensors. steady-state or transient measurement data are combined modeling study to extract bonded interface wafer pair. extracted die–die created bonding is compared...

10.1115/1.4035597 article EN Journal of Electronic Packaging 2016-12-31

A temporary carrier system is evaluated during several backside processing steps on ultra-thin wafers, down to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$20\ \mu\mathrm{m}$</tex> , with the main focus centered chemical vapor deposited (CVD) oxides. Such wafers hold risk of deformation and even delamination deposition step. step-by-step investigation reveals deformation/delamination mechanism be highly dependent oxide conditions rather than...

10.1109/ectc51909.2023.00269 article EN 2023-05-01

In this study, Finite Element Modeling (FEM) is used to predict the stress and deformation induced by packaging temperature hot spots for 3D-IC packages. The studied packages consist of a stack two Si dies attached with flip chip technology laminate in ball grid array (BGA) configuration. Three were considered paper: molded different epoxy mold compounds (EMCs) one bare die package without EMC. impact bottom thickness on investigated. finite element simulation results indicate that thinning...

10.1109/eurosime.2015.7103104 article EN 2015-04-01

Thermo-mechanical stresses are often induced during processing of IC-packages. This is mainly due the Coefficient Thermal Expansion (CTE) mismatch between materials used to make these packages. Therefore, accurate CTE measurements great importance. In this study in-plane were conducted for thin film samples using Digital Image Correlation (DIC). The methodology was validated copper test samples. Two different package substrates characterized. DIC technique compared Mechanical Analysis (TMA)...

10.1109/eurosime.2016.7463338 article EN 2016-04-01

Fan-out wafer level packaging (FO-WLP) has increased interest for a wide range of applicationsHowever, warpage is one big challenge during process, which needs to be addressed successful process integration. In this study, the molded with and without temporary bonding material (TBM) investigated. Finite Element (FE) modeling was used identify key parameters influencing using virtual experiments. Design Experiments (DOE) were performed different geometrical (such as mold compound (MC) die...

10.1109/estc.2018.8546433 article EN 2018 7th Electronic System-Integration Technology Conference (ESTC) 2018-09-01

Wafer warpage is a big challenge during wafer process in Fan-Out Wafer-Level-Packaging (FOWLP). It crucial to keep low as much possible for successful integration. The mainly due the Coefficient of Thermal Expansion (CTE) mismatch between involved materials temperature changes. Furthermore, molded wafers depends on material properties. Therefore, accurate characterization has great importance. In this paper, thermal-mechanical properties used polymeric were measured using nanoindentation and...

10.1109/eurosime.2019.8724578 article EN 2019-03-01

Fan-Out Wafer-Level-Packaging (FOWLP) has an increased interest because of its lower cost substrate-less and footprint driven by the need for higher-density, higher-bandwidth chip-to-chip connections. However, many challenges are faced during process steps, such as reconstructed wafer warpage. It occurs mainly polymers curing when temperature changes process, due to mismatch in coefficient thermal expansion (CTE) constituent materials. Furthermore, moisture diffuses into polymeric materials,...

10.1109/ectc51906.2022.00268 article EN 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) 2022-05-01

In the broad-spectrum of 3D system integration technologies, stacking die at wafer level is considered a promising and cost effective platform solution for device 2.5D interposer assembly. The die-to-wafer (D2W) approach consists sequence processes: D2W stacking, wafer-level encapsulation ("wafer reconstruction") using e.g. molding, Wafer thinning, Through Silicon Via (TSV) reveal backside passivation, finally addition redistribution layer (RDL) bumping or solder ball attach. area explored...

10.1109/ectc.2016.194 article EN 2016-05-01

Fan-Out Wafer-Level-Packaging (FOWLP) has an increased interest because of its lower cost substrate-less and footprint driven by the need for higher-density, higher-bandwidth chip-to-chip connections. However, FOWLP process is facing many challenges such as wafer warpage die shift. Wafer occurs mainly when temperature changes during processes, due to mismatch in coefficient thermal expansion (CTE) constituent materials. Large reconstructed wafers leads difficulties handling tool...

10.1109/estc48849.2020.9229783 article EN 2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC) 2020-09-15

With the continuous development of 3D technology, il enables different variety in advanced packaging. One oi package type which is currently being explored die-to-wafer (D2W) configuration. The D2W assembly can be packaged using a standard flip chip with laminate or BGA substrate but it has certain limitation terms oí deformation induced during processing due to temperature changes as composed materials mainly substrates, silicon-die and mold compound coefficient thermal expansions (CTE)....

10.1109/eptc.2015.7412349 article EN 2015-12-01

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation A. Salahouelhadj, F. Abed‐Meraim, H. Chalal, T. Balan; On the implementation of continuum shell finite element SHB8PS application to sheet forming simulation. AIP Conf. Proc. 4 May 2011; 1353 (1): 1203–1208. https://doi.org/10.1063/1.3589680 Download citation file: Ris (Zotero) Reference Manager EasyBib...

10.1063/1.3589680 article EN AIP conference proceedings 2011-01-01
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