A5101966834- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- Gas Sensing Nanomaterials and Sensors
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Electronic and Structural Properties of Oxides
- Metal-Organic Frameworks: Synthesis and Applications
- Quantum Dots Synthesis And Properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Plasmonic and Surface Plasmon Research
- Covalent Organic Framework Applications
- Perovskite Materials and Applications
- Polymer crystallization and properties
- Therapeutic Uses of Natural Elements
- Advanced NMR Techniques and Applications
- Mercury impact and mitigation studies
- Semiconductor Lasers and Optical Devices
- Advanced Sensor and Energy Harvesting Materials
- Iron oxide chemistry and applications
- Magnetism in coordination complexes
- Catalytic Processes in Materials Science
- Solid-state spectroscopy and crystallography
- Thermal Radiation and Cooling Technologies
Yancheng Teachers University
2019-2023
Yangzhou University
2016-2021
National Taiwan University
2012-2019
Taizhou University
2019
United States Air Force Research Laboratory
2016
U.S. Air Force Research Laboratory Sensors Directorate
2016
U.S. Air Force Research Laboratory Materials and Manufacturing Directorate
2016
The Ohio State University
2016
Wyle (United States)
2016
Wright State University
2016
The efficiency enhancement of light color conversion from blue quantum well (QW) emission into red dot (QD) through surface plasmon (SP) coupling by coating CdSe/ZnS QDs on the top an InGaN/GaN QW light-emitting diode (LED) is demonstrated. Ag nanoparticles (NPs) are fabricated within a transparent conductive Ga-doped ZnO interlayer to induce localized (LSP) resonance for simultaneously with QWs and QDs. Such process generates three effects, including emission, QD absorption at wavelength,...
The molecular beam epitaxy growth of highly degenerate Ga-doped ZnO (GaZnO) nanoneedles (NNs) based on the vapor-liquid-solid (VLS) mode using Ag nanoparticles (NPs) as catalyst is demonstrated. It shown that when substrate temperature sufficiently high, a portion NP can be melted for serving to precipitate GaZnO residual and form NN. Record-low turn-on threshold electric fields in field emission test grown NNs are observed. Also, record-high enhancement factor calibrated. Such superior...
The combination of high optical transparency and low electrical resistivity has made transparent conductive oxides (TCOs) a key technology in many optoelectronic applications. Furthermore, the study TCOs yields insight into fundamental parameters semiconductors. For example, charge carrier concentration results an apparent shift band gap, so-called Burstein-Moss shift, addition to plasmonic resonances near infrared regime. While both effects are related structure, their lateral distribution...
A series of BiOCOOH and Bi/BiOCOOH heterojunction photocatalysts have been facilely synthesized by a one-step reaction with the assistance formamide.
p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained is due the high hole mobility in u-GaN layers, which serve as effective transport channels holes diffused from neighboring p-GaN layers. Mg doping thin layer can lead Mg-doping concentration for supplying Simulations based on 1-D drift diffusion charge control model and Brooks-Herring theory ionized impurity scattering undertaken first obtain...
To identify the individually optimized thermal annealing conditions for reducing contact resistivity between highly Ga-doped ZnO (GaZnO) and doped-GaN improving electrical optical properties of GaZnO, results one-step two-step growth/annealing processes GaZnO at various growth temperatures are compared. The (two-step) process corresponds to condition whole layer (only a 10-nm first-step growth). always in lower on either p-GaN or n-GaN any temperature. Lateral vertical light-emitting diodes...
Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH 64.1, 43.4, 37.0, 34.2 cm2/V-s, respectively. This extremely unusual ordering vs is explained the existence a very high-mobility Debye tail in ZnO, arising from large Fermi-level mismatch between GZO ZnO. Scattering theory conjunction with Poisson analysis predicts Debye-tail mobility 206 cm2/V-s at interface (z d), falling to...
Surface behavior modification by forming surface-transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of NWs can be controlled. The Ga-doped ZnO (GaZnO) grown on templates different under growth conditions are studied exploring a polarity control technique. formed Ga- and N-face GaN through vapor-liquid-solid (VLS) process using Ag nanoparticles as catalyst. Zn- (O-) rich always Zn (O) polar. During early stage NW growth,...
The void structures and related optical properties after thermal annealing with ambient oxygen in regularly patterned ZnO nanrorod (NR) arrays grown the hydrothermal method are studied. In increasing temperature, distribution starts from bottom extends to top of an NR vertical ( c ‐axis) growth region. When temperature is higher than 400°C, spreads into lateral m Photoluminescence measurement shows that band‐edge emission, contrast defect emission yellow‐red range, strongest under n ‐ZnO...
A CdZnO/n-ZnO multiple-quantum-well (QW) light-emitting diode (LED), with the QWs and <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm n}^{+}$</tex></formula> -ZnO capping layer grown molecular beam epitaxy on p-GaN, which is metal–organic chemical vapor deposition, fabricated characterized. Because of weak carrier localization mechanism in ZnO-based LED, its defect emission quite strong...
The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth transparent conductor layer Ga-doped ZnO (GaZnO) on surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst forming nanoneedles (NNs) through vapor-liquid-solid mode...
Due to a strong Fermi-level mismatch, about 10% of the electrons in 5-nm-thick highly Ga-doped ZnO (GZO) layer grown by molecular beam epitaxy at 250 °C on an undoped buffer transfer (Debye leakage), causing measured Hall-effect mobility (μH) GZO/ZnO combination remarkably increase from 34 cm2/V s, thick GZO, 64 s. From previous characterization it is known that ND = [Ga] 1.04 × 1021 and NA [VZn] 1.03 1020 cm−3, where ND, NA, are donor, acceptor, Zn-vacancy concentrations, respectively. In...
HRCA not only acts as a reducing agent, but also plays role in morphology regulation the synthesis of ZnO–Au micro–nano materials. Gold particles deposited on formed ZnO sheets and prevented sheet-like from accumulating.
A series of new organic–inorganic nanohybrids were successfully prepared by using Congo red and heat-treated halloysite clays. The results show that an increase in calcination temperature leads to the reduction lightness ([Formula: see text]*) color hue text]*, [Formula: text]*). hybrids prepared, respectively, with 400 ∘ C treated 500 halloysites have same order HNO[Formula: text] respect acid resistance. hybrid a light can be obtained alkali treatment when calcined at higher was used as...
A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -ZnO capping layer grown molecular beam epitaxy p-GaN metalorganic chemical vapor deposition, is fabricated characterized. Its performances are compared those of a lateral LED based on same epitaxial structure to show significantly lower device resistance, smaller leakage current, weaker output intensity...
CdZnO/ZnO quantum well (QW) samples are grown on GaN and ZnO templates with plasma-assisted molecular beam epitaxy under different conditions of substrate temperature, Cd effusion cell O(2) flow rate for emission characteristics comparison. It is found that the incorporation template generally lower, when compared template, such needs to be reduced stoichiometric QW growth template. Besides wurtzite (wt) CdZnO structure, rock-salt (rs) structure exists in layers total content high. The rs...
The effects of the tilt crystallographic orientation with respect to an incident electron probe on high-angle annular dark field (HAADF) imaging in aberration-corrected scanning transmission microscopy (STEM) have been investigated experiments and simulations. A small specimen can lead unequal deviations different atom species HAADF image result further relative displacement between anions cations. Simulated images also confirm that crystal causes artifact polarization as well. effect is...