Few-layer MoS2 films have garnered significant attention as promising materials for electronic devices and sensors due to their exceptional carrier mobility tunable bandgap. Although various chemical vapor deposition (CVD) techniques been employed fabricate few-layer films, there remains a need film homogeneity, continuity, crystalline quality improvements. This research used the TVS method large-scale few-layered films. The metal Mo were sulfurized under high vacuum conditions using both in...

Lead sulfide quantum dots (PbS QDs) are used in broadband photodetectors due to their excellent size tunability, photosensitivity, and solution processability. However, the risk of Ostwald ripening, synthesizing high-quality PbS QDs with absorption peaks over 2000 nm high monodispersity is a challenge. In this study, by controlling molar ratio Pb S number injections precursor, we successfully prepared large an peak at 2122 nm, corresponding average diameter 11.42 super-mono-dispersity 5.50%....

Light loss is one of the main factors affecting quantum efficiency photodetectors. Many researchers have attempted to use various methods improve silicon-based Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene construct high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes weak light absorption and severe surface recombination traditional At same time, can be...

Silver nanowires (AgNWs) are used as transparent electrodes (TE) in many devices. However, the contact mode between is biggest reason why sheet resistance of silver limited. Here, simple and effective ultraviolet (UV) irradiation welding chosen to solve this problem. The influence power density UV on studied fixed time one minute. range (380 nm) from 30 mW/cm2 150 mW/cm2. First all, transmittance nanowire film not found be affected by (400-11,000 nm). decreases 73.9% at 60 increases 127.6%...

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of is determined the X-ray photoelectron spectroscopy (XPS), optical constant n k obtained variable angle spectroscopic ellipsometer (VASE) in spectral range 380–1600 nm. refractive index extinction coefficient at 500 nm 1.464 0.0069, respectively. rate controlled changing reaction pressure. effects rate, film thickness,...

First-principles DFT calculations reveal enhanced interaction between non-polar facets of PbS QDs and graphene. External electric fields can modulate energy levels charge transfer, offering insights for optimizing QD/graphene systems.

The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different fields were utilizing three types precursor affected local significantly. experiment results showed that appropriate concentration could be achieved conditioning, resulting single 2D crystals large size high coating rate crystal on target substrate surface. also contributed to growth when it flew towards...

Light trapping is of great importance in many applications including photodetectors and solar cells. Silicon-based structures hybrid devices were designed studied to reduce reflection, thus enhance light trapping. The typical pillar array was analyzed concerning the radius distance between pillars first. result showed that reflection could be reduced from range 0.35–0.45 0–0.3 with wavelength 400 700 nm. What should noted optimal size for changed when varied. Furthermore, structure increase...

The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due quantum effects and confinement the existing semiconductor nanocrystal. In order explore influence diameters distribution density nanowires on light absorption in visible near infrared band, we report highly efficient method multiple replication versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; monocrystalline is etched...

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to atomic thickness those materials. In this work, direct chemical vapor deposition (CVD) process was applied achieve 2D MoS2 encapsulation onto silicon nanopillar array substrate (NPAS). Single-layer monocrystal sheets were obtained, and percentage encapsulated surface NPAS up 80%. The reflection transmittance incident light our MoS2-encapsulated within visible shortwave infrared...

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We have successfully developed a high-performance, wide-spectrum TCFs composed of AgNWs and graphene, which undergoes post-treatment through UV welding.

Dual-band infrared detection offers enhanced spectral information crucial for improved target identification. Traditional dual-band photodetectors have often relied on expensive epitaxial growth bulk materials, limiting their widespread use in civilian applications. Colloidal quantum dots present an affordable alternative detection, owing to tunability and solution processability. In this study, we developed approach utilizing mixed lead sulfide dot films achieve spanning the NIR (Near...

Recently, lead sulfide colloidal quantum dots (PbS CQDs) have demonstrated great potential in becoming one of the promising material candidates for next-generation photodetectors. PbS CQDs provide outstanding properties including size dependent bandgap tunability, high absorption coefficient, solution processability, and multiple exciton generation effects. However, a crucial criterion fabrication high-performance photodetectors is effective surface passivation dots,which can facilitate...

Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of in machine vision, autonomous vehicles, night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) promising materials. Because adjustable bandgap, it responds over a wide spectral range. construction high-quality junction between Si CQDs continues to be difficult, thus restricting scope...

Light loss is one of the main factors affecting quantum efficiency photodetectors. Several approaches have been proposed to mitigate light and improve silicon-based Here, we demonstrate high-sensitivity photodetectors based on highly antireflective silicon nanopillar arrays (Si-NPAs) as a trapping layer combined with thin film silver nanowires (Ag-NWs) in mesh configuration. This composite structure overcomes weak absorption severe surface complexation conventional Introduction Ag-NWs...