A5089552791- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Advanced Semiconductor Detectors and Materials
- Advanced Sensor and Energy Harvesting Materials
- 2D Materials and Applications
- Nanomaterials and Printing Technologies
- Gas Sensing Nanomaterials and Sensors
- Gold and Silver Nanoparticles Synthesis and Applications
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Graphene research and applications
- Electromagnetic wave absorption materials
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Copper-based nanomaterials and applications
- Magnetic Properties and Synthesis of Ferrites
- Advanced Measurement and Metrology Techniques
- Silicon Carbide Semiconductor Technologies
- Electronic and Structural Properties of Oxides
- Antenna Design and Optimization
- Advanced Surface Polishing Techniques
- Multiferroics and related materials
- Advanced machining processes and optimization
Xi'an Technological University
2020-2024
Tianjin University of Technology
2016-2019
Abstract PbS colloidal quantum dot (CQD) photodiodes are becoming increasingly significant for their utility in short-wave infrared (SWIR) detection and imaging. Despite promise, challenges persist synthesizing large dots that extend response wavelength beyond 1500 nm. The usual hot-injection method has problems because of changes temperature, solution ratios, the Ostwald ripening process, all which make it harder to same size as temperature rises. In this study, we introduced small-sized...
Lead sulfide quantum dots (PbS QDs) are used in broadband photodetectors due to their excellent size tunability, photosensitivity, and solution processability. However, the risk of Ostwald ripening, synthesizing high-quality PbS QDs with absorption peaks over 2000 nm high monodispersity is a challenge. In this study, by controlling molar ratio Pb S number injections precursor, we successfully prepared large an peak at 2122 nm, corresponding average diameter 11.42 super-mono-dispersity 5.50%....
Light loss is one of the main factors affecting quantum efficiency photodetectors. Many researchers have attempted to use various methods improve silicon-based Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene construct high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes weak light absorption and severe surface recombination traditional At same time, can be...
Silver nanowires (AgNWs) are used as transparent electrodes (TE) in many devices. However, the contact mode between is biggest reason why sheet resistance of silver limited. Here, simple and effective ultraviolet (UV) irradiation welding chosen to solve this problem. The influence power density UV on studied fixed time one minute. range (380 nm) from 30 mW/cm2 150 mW/cm2. First all, transmittance nanowire film not found be affected by (400-11,000 nm). decreases 73.9% at 60 increases 127.6%...
First-principles DFT calculations reveal enhanced interaction between non-polar facets of PbS QDs and graphene. External electric fields can modulate energy levels charge transfer, offering insights for optimizing QD/graphene systems.
The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different fields were utilizing three types precursor affected local significantly. experiment results showed that appropriate concentration could be achieved conditioning, resulting single 2D crystals large size high coating rate crystal on target substrate surface. also contributed to growth when it flew towards...
Lead sulfide (PbS) quantum dots (QDs) have attracted a great deal of attention in recent decades, due to their value for applications optoelectronic devices. However, optimizing the performance devices through ligand engineering has become major challenge, as surfactants that surround impede transport electrons. In this paper, we prepared PbS QD films and photoconductive with four different ligands: 1,2-ethylenedithiol (EDT), tetrabutylammonium iodide (TBAI), hexadecyl trimethyl ammonium...
Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to atomic thickness those materials. In this work, direct chemical vapor deposition (CVD) process was applied achieve 2D MoS2 encapsulation onto silicon nanopillar array substrate (NPAS). Single-layer monocrystal sheets were obtained, and percentage encapsulated surface NPAS up 80%. The reflection transmittance incident light our MoS2-encapsulated within visible shortwave infrared...
We have successfully developed a high-performance, wide-spectrum TCFs composed of AgNWs and graphene, which undergoes post-treatment through UV welding.
Dual-band infrared detection offers enhanced spectral information crucial for improved target identification. Traditional dual-band photodetectors have often relied on expensive epitaxial growth bulk materials, limiting their widespread use in civilian applications. Colloidal quantum dots present an affordable alternative detection, owing to tunability and solution processability. In this study, we developed approach utilizing mixed lead sulfide dot films achieve spanning the NIR (Near...
Recently, lead sulfide colloidal quantum dots (PbS CQDs) have demonstrated great potential in becoming one of the promising material candidates for next-generation photodetectors. PbS CQDs provide outstanding properties including size dependent bandgap tunability, high absorption coefficient, solution processability, and multiple exciton generation effects. However, a crucial criterion fabrication high-performance photodetectors is effective surface passivation dots,which can facilitate...
Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of in machine vision, autonomous vehicles, night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) promising materials. Because adjustable bandgap, it responds over a wide spectral range. construction high-quality junction between Si CQDs continues to be difficult, thus restricting scope...
Light loss is one of the main factors affecting quantum efficiency photodetectors. Several approaches have been proposed to mitigate light and improve silicon-based Here, we demonstrate high-sensitivity photodetectors based on highly antireflective silicon nanopillar arrays (Si-NPAs) as a trapping layer combined with thin film silver nanowires (Ag-NWs) in mesh configuration. This composite structure overcomes weak absorption severe surface complexation conventional Introduction Ag-NWs...