Abstract Projection micro stereolithography (P μ SL) is a high-resolution (up to 0.6 m) 3D printing technology based on area projection triggered photopolymerization, and capable of fabricating complex architectures covering multiple scales with materials. This paper reviews the recent development P SL technologies, together related applications. It introduces working principle, commercialized products, multiscale, multimaterial capability as well some functional photopolymers that are...

Abstract The first flexible organic‐heterojunction neuromorphic transistor (OHNT) that senses broadband light, including near‐ultraviolet (NUV), visible (vis), and near‐infrared (NIR), processes multiplexed‐neurotransmission signals is demonstrated. For UV perception, electrical energy consumption down to 536 aJ per synaptic event demonstrated, at least one order of magnitude lower than current UV‐sensitive devices. NIR‐ vis‐perception, switchable plasticity by alternating light sources...

Organic field-effect transistors (OFETs) were prepared and analyzed by inserting various thickness of 4,4′,4″-tris[3-methylphenyl(phenyl)amino] triphenylamine (m-MTDATA) between pentacene gold electrodes as a hole injection layer. These OFETs showed significant enhancement mobility comparing to the corresponding single layer device. The interfacial morphologies pentacene/m-MTDATA contact characterized atomic force microscopy. improvement was attributed an intermediate energy level formed...

The ability of artificial synapses to replicate multiplexed-transmission is a significant advancement in emulating complex brain activities. However, it generally required more stringent material requirements intrinsic-ambipolarity and structures P/N dual-channel. Here, we proposed far-gate synaptic transistor (FGST) just using single-channel composed common unipolar semiconductor emulate the cooperation competition between two excitatory neurotransmitters. FGST exhibits unique ion-charge...

This paper studies the short-circuit safe operating area (SCSOA) of conventional field-stop (FS) IGBT and superjunction (SJ) FS IGBT, based on 1200 V-rated samples, with help numerical electrothermal simulations. The results show that peak electric field influences distribution temperature inside devices plays a crucial role in determining their SCSOAs. When doping concentration collector, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

High contrast organic light-emitting devices with low-reflection cathodes are fabricated. The cathode consists of a semitransparent metal layer, phase-changing (PC) and reflective layer. With Al doped tris(8-hydroxyquinoline) aluminum as PC exhibit the average reflectivity ambient light low about 13%. And its electrical characteristics almost identical to that conventional device, although thickness is increased by 70%. improvement in conductivity could be attributed conductive cluster...

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of film small number traps at the interface PMMA∕C60 were obtained with high electron mobility 0.66cm2∕Vs in PMMA transistor. result suggests that semiconductor cooperating is a promising application fabrication n-type because low threshold voltage mobility.

Organic thin film transistors (OTFTs) were fabricated by inserting various thickness of 1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) hole transport layer (HTL) between pentacene and source/drain electrodes. Compared to the OTFTs without a HTL, these devices with optimum TAPC HTL not only showed decrease threshold voltage ( V T ) but also presented an enhancement charge carrier mobility. The performance was ascribed increase bulk properties in continuous which analyzed variation trend...

We report a copper (Cu)-based source/drain (S/D) electrodes organic thin-film transistor (OTFT) with bi-buffer layer structure consisting of firstly CuOx and secondly MoO3 layer. Comparing single Cu s/d OTFTs, devices not only exhibit enhanced mobilities by more than five times, but also show an improvement operation stability. The performance enhancement is attributed to interfacial properties between active electrodes, which was analysed x-ray photoelectron spectroscopy contact resistance.

Poly(3-hexylthiophene) thin-film transistors with anodized high-dielectric constant (κ) tantalum pentoxide (Ta2O5) and spin-coated poly(4-vinylphenol) (PVP) film dual insulator layers were demonstrated. The polymeric PVP layer covering the Ta2O5 can considerably improve transistor performance. mobility was increased up to 3.07×10-2 cm2/(V·s), which is much higher than that obtained by only using a or single dielectric layer. threshold voltage of dual-insulator device as low 1.7 V, because...

In this paper, a novel superjunction (SJ) MOSFET embedded with an ultrasoft reverse-recovery body diode is proposed and studied by simulation. The device has composite assistant layer, which consists of highly doped n-buffer region extended p-pillar region, under the SJ layer. layer provides residual carriers during procedure smoothens current. Simulated results show that soft factor upgraded from 0.04 to over 0.3 when depth increases 0 μm increment specific ON-resistance less than 10% if...

C60 field-effect transistor (OFET) with a mobility as high 5.17 cm2/V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows significant enhancement of electron compared the corresponding device single PMMA insultor Ag electrode. By analysing film atomic force microscopy X-ray diffraction techniques, it shown that can contribute to growth...

Organic thin film transistors (OTFTs) with isotype heterojunction semiconducting layers composed of p-type pentacene and dioctylbenzothienobenzothiophene (C8BTBT) have been fabricated. In our OTFTs, continuous is deposited on top C8BTBT as a secondary layer, which not only can play the role interfacial layer for hole carriers injection from copper (Cu) source/drain (S/D) electrodes to but also provide another transport channel itself. The device performance then effectively improved....

Curve skeleton extraction from unorganized point cloud is a fundamental task of computer vision and three-dimensional data preprocessing visualization. A great amount work has been done to extract cloud. but the lack standard datasets with ground truth makes it difficult evaluate these algorithms. In this paper, we construct brand new tree-structured dataset, including skeletons, models. addition, four types are built on clean cloud: clouds noise, missing data, different density, uneven...

Fullerene (C 60 )-based organic field-effect transistors (OFETs) were fabricated using lithium fluoride (LiF)/silver (Ag) as source/drain electrodes. Field-effect mobility increased from 2.74 to 5.07 cm 2 V -1 s after modifying single Ag electrodes with the proper thickness of LiF layer. Meanwhile, contact resistance could be reduced 25 10 kΩ. The performance improvement OFETs was attributed realignment energy band, which reduce charge carrier injection barrier at C /Ag interface. Moreover,...

Organic field-effect transistors (OFETs) with a pentacene/TPBi/pentacene sandwich structure were realized and characterized. Compared the single pentacene layer transistors, these devices not only showed an obvious reduction of threshold voltage but also presented significant enhancement mobilities. The performance improvement was attributed to high conductivity active layers, which analyzed by applying transfer line method. Meanwhile, morphologies films without TPBi interlayer characterized...

A novel lateral double‐diffusion MOS (LDMOS) with n + floating islands in the substrate (NFI LDMOS) is proposed. In NFI LDMOS, a series of are introduced into substrate. On condition high‐voltage blocking state, induce high potential from drain region to source region, which modulates drift region's electric field and leads higher breakdown voltage (BV). What more, specific on‐resistance ( R on , sp ) reduced by doping concentration due islands. Compared conventional LDMOS at same 40 μm BV...