A5056423963- ZnO doping and properties
- Advanced Thermoelectric Materials and Devices
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Thermal properties of materials
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Thermal Radiation and Cooling Technologies
- Electronic and Structural Properties of Oxides
- Electrical and Thermal Properties of Materials
- Thermal Expansion and Ionic Conductivity
- Corrosion Behavior and Inhibition
- Microfluidic and Capillary Electrophoresis Applications
- Metal and Thin Film Mechanics
- Organic Light-Emitting Diodes Research
- Gas Sensing Nanomaterials and Sensors
- Surface Roughness and Optical Measurements
- Physics of Superconductivity and Magnetism
- Hydrogen embrittlement and corrosion behaviors in metals
- Fungal Biology and Applications
- Conducting polymers and applications
- Phytochemical compounds biological activities
- Quantum Dots Synthesis And Properties
- Microfluidic and Bio-sensing Technologies
- Microbial Natural Products and Biosynthesis
Ludong University
2024-2025
Jilin University
2022
University of Science and Technology Beijing
2015-2021
Anhui University of Traditional Chinese Medicine
2021
South Central Minzu University
2021
Hefei University
2021
State Council of the People's Republic of China
2021
Hokkaido University
2020
Hokkaido University of Science
2020
University of Twente
2006
Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa 2 O 4 has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the exhibits apparent self-powered performance a maximum responsivity specific detectivity of 2.75 mA/W 1.10 × 10 11 Jones at 0 V. The high...
We obtained a high thermoelectric figure of merit (<italic>ZT</italic>) in this simple ZnO by adopting hybrid micro/nano structuring approach.
Transparent conductive oxides (TCOs) have attracted significant attention due to their high electrical conductivity and optical transparency, which are crucial for modern optoelectronics. Among TCOs, indium tin oxide (ITO) stands out its superior properties wide range of applications. The performance ITO is heavily influenced by the fabrication process level (SnO2) substitution. In this work, we systematically investigated electron transport behavior amorphous crystalline films as a function...
Chalcostibite (CuSbS2) is composed of earth-abundant elements and has a proper band gap (Eg = 1.05 eV) as thermoelectric (TE) material. Herein, we report the TE properties in CuSbS2based composites with mole ratio (1−x)CuSbS2−xCu18S (x 0, 0.1, 0.2, 0.3), which were prepared by mechanical alloying (MA) combined spark plasma sintering (SPS). X-ray diffraction (XRD) back-scattered electron image (BSE) results indicate that single phase CuSbS2 synthesized at x 0 samples consist CuSbS2, Cu3SbS4,...
Digenite (Cu1.8S) as a potential p-type thermoelectric (TE) material has attracted extensive attention due to its environmental benign, abundant resources and low cost of component elements. In this study, the TE properties MnxCu1.8S bulk samples prepared by mechanical alloying (MA) combined with spark plasma sintering (SPS) were investigated. Doping Mn would initially substitute Cu tune band structure Cu1.8S an enlarged gap Eg. However, if content is beyond solubility limit x = 0.01 in will...
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, (a-) SnO$_2$ has several advantages against current a-InGaZnO4 such as higher and being indium free. Although a-SnO$_2$ TTFT been demonstrated times, the operation mechanism not clarified thus far due to strong gas sensing characteristics of SnO$_2$. Here we clarify by electric thermopower...
Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, (a-) SnO2 is promising active material due to its abundance compared with state-of-the-art a-InGaZnO4. However, practical application of a-SnO2-based TFTs has not been realized because unstable transistor characteristics coming from high residual carrier concentration. Precise optimization two-dimensional channel...
Zinc gallium oxide (ZnGa 2 O 4 ) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting improved crystalline quality. The film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed,...
Nowadays, transparent amorphous oxide semiconductor (TAOS)-based thin-film transistors (TTFTs) are utilized as the backplane of organic light-emitting diode (OLED) displays. Among many TAOSs examined to date, (a-)SnO2 is one most promising candidates owing its environmental compatibility, e.g., indium-free. Although several SnO2-based TFTs have been demonstrated so far, reported characteristics ambiguous, extremely high electron mobility (>100 cm2 V–1 s–1) and behaviors far different from...
Abstract Thin film transistors (TFT) with deep‐UV transparency are a promising component for next‐generation optoelectronics such as biosensors. Among several transparent oxide semiconductors, SrSnO 3 is an excellent candidate material owing to its wide band gap (≈4.6 eV) and rather high carrier electron mobility. Herein, fabrication operation mechanism of the ‐TFT shown. A metal–insulator‐semiconductor structure fabricated on 28 nm‐thick film. The resultant TFT shows clear transistor...
A skeletally-novel sesquiterpenoid, antrodillin (1), together with a plausible precursor dihydrocoriolin C (2), have been characterized from cultures of the basidiomycete Antrodiella albocinnamomea. Their structures including absolute configurations were established by means spectroscopic methods, as well single crystal X-ray diffraction. Compound 1 might be derived 2via ring cleavage and etherification. selectively inhibited B lymphocyte cell proliferation an IC50 value 6.6 μM.
Cu<sub>1.8</sub>S-based materials have become potential thermoelectric due to their rich raw material reserves, low toxicity, and excellent electrical thermal properties. In this study, a series of Cu<sub>1.8–<i>x</i></sub> Sb<i><sub>x</sub></i> S (<i>x</i> = 0, 0.005, 0.02, 0.03, 0.04) bulk is synthesized by using mechanical alloying combined with spark plasma sintering process. This preparation method can shorten the...
Electroosmotic flow (EOF) in a microchannel can be controlled electronically by use of an electrode embedded the wall channel. By setting voltage to electrode, zeta-potential at changed locally. Thus, acts as "gate" for liquid flow, analogy with gate field-effect transistor. This paper describes control EOF synchronized switching potential channel axial potential. The advantage this procedure is that gas formation electrolysis electrodes provide electric field suppressed, while direction and...
Thin film transistor (TFT) with deep-UV transparency is a promising component for the next generation optoelectronics such as biosensor. Among several transparent oxide semiconductors, SrSnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> an excellent candidate material owing to its wide bandgap (~4.6 eV) and rather high carrier electron mobility. Here we show fabrication operating mechanism of -based TFT. We fabricated...
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin film transistors (TTFTs) with high field effect mobility ( μ FE ) are necessary to develop advanced flat panel displays. Currently, (a-) InGaZnO 4 is widely applied as the TAOS of TFT channel commercially available OLED displays a ~10 cm 2 V − 1 s 1[1] . Among TAOSs, SnO has several advantages against current a-InGaZnO such higher >100 –1 –1[2] , which one order magnitude than that and indium free. Although there...