A5013132812- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Particle Detector Development and Performance
- Semiconductor Quantum Structures and Devices
- Energy Harvesting in Wireless Networks
- 3D IC and TSV technologies
- VLSI and Analog Circuit Testing
Georgia Institute of Technology
2021-2025
To support the use of SiGe BiCMOS for future mission targets such as Europa, which are subject to high radiation doses and cryogenic temperatures, heterojunction bipolar transistors (HBTs) were exposed 1-MeV electrons 5 Mrad(Si) at 300, 200, 115 K. The presented results first in situ characterization electron irradiation temperatures HBTs. Lower temperature was found improve total ionizing dose (TID) tolerance. Physical mechanisms behind this improved tolerance with cooling examined, trap...
This investigation examines the physical mechanisms that can increase variability of both p-n junctions and silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative responsible for device parameter include bandgap narrowing due to heavy doping, mechanical stress, Ge profile. impact direct tunneling on in SiGe HBTs is also examined. Measurement results are compared with TCAD simulations provide additional insights, possible mitigation...
Europa lies in Jupiter's colossal radiation belt, producing surface conditions that are so severe (5 Mrad[Si]) most modern electronics would experience degradation a matter of days. This challenge, coupled with the sub-100 K temperatures, leads to very hostile environment for viable electronic infrastructure. To help enable future mission landing on Europa's surface, there must be efficient terrestrial testing facilities place model effects requisite microelectronics.The Jet Propulsion...
To support the use of SiGe heterojunction bipolar transistors (UBTs) in cryogenic environments such as space or quantum computing readout, temperature dependence back-end-of-line (BEOL) induced mechanical stress effects was investigated from 300 K to 13 K. Test structures with 9 metal layers placed directly above device were used introduce BEOL HBT. Measurements and simulations show a substantial increase sensitivity at temperatures. This is attributed combination higher slope Gummel...
The effects of carbon doping in the SiGe base on electrical reliability HBTs are investigated. This study uses three separate HBTs, each with an identical process flow exception dose introduced during epitaxial growth. These devices characterized for open-base collector-emitter breakdown voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$BV_{CEO}$</tex> and open-emitter collector-base...