A5032359569- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Electrostatic Discharge in Electronics
- 3D IC and TSV technologies
- VLSI and Analog Circuit Testing
- Microwave Engineering and Waveguides
- Optical Network Technologies
- CCD and CMOS Imaging Sensors
- Advancements in PLL and VCO Technologies
- Advanced Power Amplifier Design
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices
- Radiation Detection and Scintillator Technologies
- Silicon and Solar Cell Technologies
- Energy Harvesting in Wireless Networks
GlobalFoundries (United States)
2020-2023
GlobalFoundries (Germany)
2020-2022
Georgia Institute of Technology
2012-2021
University of Atlanta
2015-2017
Texas Instruments (United States)
2014
We study mixed-mode stress degradation in SiGe HBTs using a novel physical TCAD model which the processes of hot carrier generation within semiconductor, propagation to oxide interface, and formation interface traps are directly modeled. Transient simulations calibrated 2-D HBT correlate well with measured data. With this simulation tool, we investigate bias dependence location show that secondary holes produced by impact ionization dominant damage emitter-base (EB) spacer confirming...
A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode HBT for the common-base transistor in a cascode core. This new configuration exhibits reduced transient peaks and shorter durations compared conventional one. improved SET response was verified through-wafer two-photon absorption pulsed-laser experiments supported via mixed-mode TCAD simulations. In addition, analysis of performance reliability issues...
This paper presents the results of an investigation steady-state safe operating conditions for large-signal silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits. By calculating capacitive currents within intrinsic transistor, avalanche inducing through junctions are isolated and then compared with dc instability points established simulation measurement. In addition, calibrated technology computer-aided design simulations used to provide further insight into differences...
We investigate and compare the hot-carrier degradation of SiGe HBTs under both traditional mixed-mode electrical stress conditions high-current using measured data an in-depth analysis underlying mechanisms. While large electric fields are driving force in degradation, Auger recombination process is shown to be source conditions. shows a positive temperature dependence, unlike due dependence its energy distribution function. also use calibrated TCAD simulations explain unexpected threshold...
This paper uses a physics-based TCAD degradation model to examine the accumulated stress damage of SiGe HBTs under pseudodynamic mixed-mode as function both electrical bias and temperature. The temperature dependence is fully explored, beginning with impact-ionization calibration, then by identifying calibrating scattering length hydrogen diffusion parameters model. After across temperature, effectiveness limitations while varying are identified, implications this aging for circuit designers...
This paper provides insight into the transport mechanisms of collector current in SiGe HBTs operating at cryogenic temperatures and compares three technology generations devices. Based on experimental data, a method to differentiate direct tunneling from quasi-ballistic is proposed. Measurements indicate that becomes more significant temperatures. The effects scaling were investigated using TCAD. Direct was found be sensitive base width Ge profile. It predicted without an increase content,...
The capability of inverse-mode (IM) silicon- germanium (SiGe) heterojunction bipolar transistors (HBTs) for the mitigation single-event transients (SETs) under large-signal operation was investigated in an RF down-conversion single- balanced mixer using a through-wafer, two-photon absorption pulsed-laser beam experiment and TCAD heavy-ion simulations. IM SiGe HBTs replace conventional forward-mode (FM) differential pair, which provides full current steering frequency mixing operation. Under...
We report on the recent addition of an improved high performance (HP) NPN HBT to GF's 90nm BiCMOS SiGe 9HP technology. The HP with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> 340/410 GHz and medium breakdown (MB) /BV xmlns:xlink="http://www.w3.org/1999/xlink">CBO</inf> 150 / 8.4 V have been developed as new feature options within As improvements are made without altering...
This paper investigates single-event effects in a W-Band (75-110 GHz) SiGe HBT down-conversion mixer intended for use space-based remote sensing radar system. Transient pulse propagation to the output of as linear time variant system is analyzed theoretically. study facilitates understanding transient RF receivers. Device- and circuit-level simulations were conducted verify results proposed theory. A two photon absorption laser was used induce transients on different HBTs within circuit...
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact alterations have on radiation effects response. This investigation represents first published occurrence a radiation-hardening-by-process approach SiGe HBT technology. Results show that improving IM performance can degrade tolerance structure. Total ionizing dose and...
We investigate high current stress mechanisms and demonstrate how Auger hot carriers can damage both oxide interfaces polysilicon regions of the emitter base. A new gain enhancement (CGE) effect is proposed, which involves hot-carrier to extrinsic base leading degradation associated minority carrier mobilities. different CGE in SiGe HBTs under forward inverse modes operation. The responsible for at injection explored depth with help TCAD simulations. Evidence this has been gathered good...
This paper examines the fundamental reliability differences between n-p-n and p-n-p SiGe HBTs. The device profile, hot carrier transport, oxide interface two types are explored in detail as they relate to reliability. After careful analysis under identical electrical stress conditions for p-n-p, activation energies damage of interfaces devices is determined be primary cause accelerated degradation seen An analytical model has been adapted simulating these aging devices. significant...
The impact of carbon doping on the single-event transient (SET) response SiGe heterojunction bipolar transistors (HBTs) was evaluated using pulsed-laser charge generation via two-photon absorption (TPA). Special device structures with different amounts were fabricated by GlobalFoundries and characterized. Despite fact that is known to introduce bulk traps in film, experimental results show no measurable difference SET HBTs carbon. Technology computer-aided design (TCAD) simulations showed...
This article presents a wideband phase-locked loop (PLL) with novel frequency acquisition for wide locking range and bandwidth in 130 nm SiGe BiCMOS technology. The PLL contains two channels that work parallel the phase to form an analog detector (PFD). proposed enables fast correction pull accommodates when significant difference is presented. designed provides of 55 MHz, margin (PM) 81.5°, offers 4.1 GHz. architecture allows simultaneous carrier synchronization data de-modulations at...
Single-event transient (SET)-hardened SiGe HBT RF single-pole single-throw (SPST) switches were designed and fabricated for the first time. TCAD-based heavy-ion simulations two-photon absorption (TPA) laser-induced beam experiments used to optimize switch core configuration SET mitigation. Among different configurations, reverse-connected series shunt device core, where both emitter terminals are connected output, exhibits smallest peaks shortest durations at output terminal of switch. Based...
The effects of negative feedback, both external and internal, on single event transients (SETs) in SiGe HBT analog circuits are investigated. In order to examine internal feedback effects, basic common-emitter NPN current mirrors, with without emitter degeneration resistors, utilized. A Wilson mirror a its intrinsic removed used study under the influence laser-induced events. measurement data clearly show notable improvements SET response that can be made by employing feedback. peak...
We present measurement results of commercially-available 90-nm SiGe HBTs at 300 K, 78 and 7 K. The data reveal increased variability K compared to that variation collector current, base DC current gain (β) increase from 5% 50% around the average measured values. Transconductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ) increases 0.6% Peak f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 2.6% 7.1%, while low injection 1.8%...
We study the accumulated degradation of SiGe HBTs under time-dependent mixed-mode stress using a new physics-based TCAD model that simulates hot carrier generation and propagation to oxide interfaces, resulting in trap formation. calibrate avalanche also do multipoint calibration damage on I-V output plane accurately predict for single device over multiple bias points. Looking at region dominated by formation, we show accumulation traps can be path-independent as long availability is not...
Total ionizing dose (TID) effects are evaluated for a high-voltage (>30 V) complementary SiGe on SOI technology. Devices irradiated with 10-keV X-rays at doses up to 5 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). The results depend strongly collector-to-emitter bias, in both forward- and inverse-mode. An anomalous reduction current gain high injection forward-mode operation is observed >500 krad(SiO Calibrated 2-D TCAD...
This investigation examines the physical mechanisms that can increase variability of both p-n junctions and silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative responsible for device parameter include bandgap narrowing due to heavy doping, mechanical stress, Ge profile. impact direct tunneling on in SiGe HBTs is also examined. Measurement results are compared with TCAD simulations provide additional insights, possible mitigation...
Profile optimization techniques are investigated for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) intended inverse-mode (IM) operation. IM device operation, also known as inverse active, involves electrically swapping the emitter and collector terminals has been shown to improve radiation tolerance of SiGe HBTs single event transients (SETs). Multiple profile design variations explored trade-offs analyzed with support TCAD simulation. Modest show marked improvement on...
Safe-operating-area (SOA) in a high-voltage complementary silicon-germanium (SiGe) (= n-p-n + p-n-p) on silicon-on-insulator (SOI) technology is investigated from 24 °C to 300 °C. Three key reliability degradation regions are identified, including: 1) high-current; 2) mixed-mode; and 3) high-power. The mechanisms, which operative, including Auger damage, mixed-mode electrothermal runaway as well their temperature dependences identified. Mixed-mode damage exhibits strong negative coefficient...
The implementation of a "superjunction" collector design in silicon-germanium heterojunction bipolar transistor is explored for enhancing breakdown performance. superjunction formed through the placement series alternating pn-junction layers collector-base space charge region to modify carrier energy profile and reduce avalanche generation. An overview physics underlying operation presented with TCAD simulations, practical techniques are discussed. first measured data on also shows 57% improvement
This paper investigates the RF reliability of SiGe HBT cascode driver amplifiers. By subtracting capacitive currents internal to common-base device from its collector waveform, a more accurate depiction electrical stress in I-V plane is achieved, and this revised load line, data better correlated DC data. novel analysis technique provides framework for designers simulate effects using both TCAD models measurements, allowing optimized performance high power frequency applications where...
High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD model for Auger-induced hot-carrier damage. The Auger generation is decoupled from classical mixed-mode annealing output plane by using conditions modulate self-heating within device under stress. physics of high-current degradation analyzed, temperature dependent presented. This first its kind in both CMOS bipolar communities solves significant...