A5028795525- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Electrostatic Discharge in Electronics
- Photonic and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Microwave Engineering and Waveguides
- Semiconductor Quantum Structures and Devices
- Advancements in PLL and VCO Technologies
- Analog and Mixed-Signal Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- Advanced Power Amplifier Design
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Semiconductor Lasers and Optical Devices
- VLSI and Analog Circuit Testing
- Silicon and Solar Cell Technologies
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Perovskite Materials and Applications
- Low-power high-performance VLSI design
- Lanthanide and Transition Metal Complexes
GlobalFoundries (United States)
2004-2024
National Institute of Technology Karnataka
2024
Indian Institute of Science Education and Research Thiruvananthapuram
2021-2024
GlobalFoundries (Germany)
2022
Guerbet (France)
2022
Guerbet (United States)
2022
Federal University of Technology
2021
Vellore Institute of Technology University
2019
GlobalFoundries (Cayman Islands)
2016
University of Atlanta
2015-2016
The silicon germanium (SiGe) heterojunction bipolar transistor (HBT) marketplace covers a wide range of products and product requirements, particularly when combined with CMOS in BiCMOS technology. A new base integration approach is presented which decouples the structural thermal features HBT from CMOS. trend to use this for future SiGe technologies easier migration advanced technology generations. Lateral vertical scaling are used achieve smaller faster devices greatly increased current...
This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent front-end multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to blocks overall architecture. An active resistor tunable 400 1600 /spl Omega/ up 10 GHz designed equivalent model extracted. A fully inductor using feedback proposed that provides inductances between 0.1-15 nH with Q>50 in C-band. To demonstrate...
This paper discusses concurrent design and analysis of the first 8.5 kV electrostatic discharge (ESD) protected single-pole ten-throw (SP10T) transmit/receive (T/R) switch for quad-band (0.85/0.9/1.8/1.9 GHz) GSM multiple-band WCDMA smartphones. Implemented in a 0.18 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu$</tex> </formula> m SOI CMOS, this SP10T employs series-shunt topology...
A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, full suite of passive elements. Significant HBT enhancement compared to previously published results has been achieved through further collector base profile optimization guided by process device simulations. Base transit time reduction was simultaneously increasing the Ge ramp limiting diffusion with addition carbon doping SiGe...
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance heterojunction bipolar transistors (HBTs) combined with advanced technology variety passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). reviews process development integration methodology, presents device characteristics, shows how selection were geared toward usage in IC development.
We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, storage markets. Various technological aspects multiple branches RF foundry that are based on standard compatible CMOS node discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, WL ("cost wireless/storage RF-CMOS optimized low-cost consumer applications. Future opportunities challenges advancement in described...
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that well-known harmonic generation issue in HRES technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive GaAs pHEMT silicon-on-sapphire technologies.
A comprehensive investigation of the impact Ge profile shape as well scaling collector and base doping profiles on high-injection heterojunction barrier effects in SiGe HBTs has been conducted over -73-85/spl deg/C temperature range. The onset Kirk effect at high current densities is shown to expose Si/SiGe collector-base space charge region, thereby inducing a conduction band which negatively impacts currents dynamic response, leading premature roll-off both /spl beta/ f/sub T/. In light...
Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV/sub CEO/ and higher current densities required to operate silicon HBTs such speeds do not in actuality limit design or performance. The high-speed portions of the system then addressed individually. We demonstrate...
This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs suitable wireless power amplifier (PA) applications. Experimental results addressing ruggedness, ac performance, safe operating area high-breakdown built in several generations of technology are presented. Implications recent high-performance HBT scaling achievements technologies targeting PA applications considered. Circuit GSM, PCS, GPRS, EDGE front-end modules have been obtained. A one-chip solution is...
This paper presents the first investigation of physical origins observed variable proton tolerance in multiple SiGe HBT BiCMOS technology generations. We use combination an extensive set newly measured data on distinct generations, detailed calibrated 2-D MEDICI simulations for both and Si CMOS devices, as well reverse-bias emitter-base forward-bias electrical stress to aid analysis. find that scaling-induced increase electric field under spacer oxide is primarily responsible degraded...
The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but resultant self-heating and elevated junction temperature emerge as a growing concern device reliability well performance. To address such thermal issues, optimization of HBT structures achieve simultaneous improvements electrical performance is carried out this study. As foundation study, an R/sub th/ measurement method geometry-based fast...
The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating temperature as an effective way gaining a better understanding performance limits SiGe HBTs and their ultimate capabilities for THz speeds. Different approaches vertical profile scaling reduction parasitics are addressed, three prototype fourth-generation compared evaluated down to deep cryogenic temperatures, using both dc ac...
Abstract Discotic liquid crystals (DLCs) are widely acknowledged as a class of organic semiconductors that can harmonize charge carrier mobility and device processability through supramolecular self‐assembly. In spite circumventing such major challenge in fabricating low‐cost transport layers, DLC‐based hole layers (HTLs) have remained elusive modern organo‐electronics. this work, minimalistic design strategy is envisioned to effectuate cyanovinylene‐integrated pyrene‐based discotic crystal...
The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in HBT's for high-performance analog circuit applications. After calibrating measured data, the effects of germanium shape on current gain, cut-off frequency, Early voltage and maximum oscillation frequency are compared over temperature range 200-360 K. impact aggressive base scaling performance also investigated as a function film stability.
This paper presents a 3-FET stacked K/Ka-band class-AB power amplifier (PA) implemented in the GLOBALFOUNDRIES 45nm SOI process that is particularly optimized for future high-performance energy-efficient 5G mm-Wave transceiver front-ends. With 2.9V supply, PA achieves 13.1dB gain and saturated output (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> ) of 16.2dBm with maximum power-added efficiency (PAE) 41.5% at 24GHz continuous-wave...
In this paper, we first introduce the RF performance of Globalfoundries 45RFSOI process. NFET F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> > 290GHz and xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> >380GHz. Then present several mm-Wave circuit block designs, i.e., Switch, Power Amplifier, LNA, based on process for 5G Front End Module (FEM) applications. For SPDT switch, insertion loss (IL) <; 1dB at 30GHz with 32dBm P1dB...
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as dominant technology for RF switches in front end modules cell phones and WiFi. SOI technologies were created from silicon processes originally used high speed logic applications, but was modified to meet performance needs of switches. The have been improved follow evolving system requirements insertion loss, isolation, voltage tolerance, linearity, integration cost. In this paper, results latest generations switch IBM are...
A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large I/sub B/ leakage only after simultaneous application of both high J/sub C/ and V/sub CB/. This differs fundamentally from well-known mechanisms such as reverse EB voltage stress, forward stress damage due to ionizing radiation. Extensive measurements two-dimensional (2-D) simulations have been used help understand device physics associated...
We present the first comprehensive investigation of neutral base recombination (NBR) in ultra-high vacuum/chemical vapor deposited (UHV/CVD) SiGe heterojunction bipolar transistors (HBT's), and its influence on temperature characteristics Early voltage (V/sub A/) current gain-Early product (/spl beta/V/sub A/). show that a direct consequence NBR HBT's is degradation V/sub A/ when are operated with constant-current input (forced-I/sub B/) as opposed to constant-voltage (forced-V/sub BE/). In...
We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc figures-of-merit are used to quantify tolerance raised extrinsic base structure Co-60 rays for varying device geometries. Additionally, impact technology scaling observed radiation response is addressed through comparisons second generation, 120 Comparisons previous proton-induced degradation in these HBTs also made, indicate that STI isolation oxide shows increased following...
We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key of this novel low-inductance ground to the package using through-silicon vias (TSVs) results in competitive solution future multiband and multimode PA integration. tungsten-filled, multifinger, bar-shaped TSV delivers more than 75% reduction inductance compared traditional wirebond. This enables higher frequency applications with roughly 20% die area without compromising...