A5100649358- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Advanced Power Amplifier Design
- Advancements in PLL and VCO Technologies
- Electromagnetic Compatibility and Noise Suppression
- 3D IC and TSV technologies
- Manufacturing Process and Optimization
- Photonic and Optical Devices
- Advanced Multi-Objective Optimization Algorithms
- Semiconductor materials and devices
- Wireless Power Transfer Systems
- Gear and Bearing Dynamics Analysis
- Energy Harvesting in Wireless Networks
- Acoustic Wave Resonator Technologies
- Wireless Communication Networks Research
- Semiconductor Lasers and Optical Devices
- Brake Systems and Friction Analysis
- Satellite Communication Systems
- Probabilistic and Robust Engineering Design
- Engineering Applied Research
- Semiconductor Quantum Structures and Devices
- Electronic Packaging and Soldering Technologies
- Optimal Experimental Design Methods
- Nanofabrication and Lithography Techniques
- Fault Detection and Control Systems
Yonsei University
2006-2024
Samsung (South Korea)
2002-2022
Kongju National University
2021
Gwangju Institute of Science and Technology
2009-2011
The Ohio State University
2006-2008
Columbus State University
2007
Advanced Micro Devices (United States)
2006
Georgia Institute of Technology
2004-2005
Chiba University
2002
Korea Advanced Institute of Science and Technology
1999
This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent front-end multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to blocks overall architecture. An active resistor tunable 400 1600 /spl Omega/ up 10 GHz designed equivalent model extracted. A fully inductor using feedback proposed that provides inductances between 0.1-15 nH with Q>50 in C-band. To demonstrate...
We present the analysis and design of an inductorless wide-band SiGe heterojunction bipolar transistor low-noise amplifier (LNA) using a resistive feedback scheme for application in ultra-wideband systems. Multiple loops enable sufficient gain low noise figure, is competitive with conventional narrow-band cascode LNAs emitter degeneration inductor. Measurement results show 20-dB 1-dB variation over 3-10 GHz, matched input output less than -10-dB reflection. The minimum figure 3.05 dB at 3...
In this brief, we present a dual-mode (high and low) power amplifier (PA) for fourth-generation long-term evolution (LTE) handset applications using device switching technique to improve the efficiency at low output power. particular, effects of gate voltage variation input switches on performances are described. addition, bias control circuit PA, which can provide correct be effectively controlled by mode voltage, is also proposed. The circuit, switch, PA implemented with integrated...
To be competitive in a mobile market, current consumption and bill-of-material (BOM) cost have to minimized. Current reduction techniques been actively investigated as they become key factor increase battery lifetime. reduce BOM cost, external low-noise amplifier (eLNA) usage discrete passive components minimized with simple interfaces, which influences the number of PCB Iayers stacks. This work is oriented provide low-power low-cost cellular RF transceiver that supports 2G, 3G, 4G well...
Abstract Recently, interest in functional safety has surged because vehicle technology increasingly relies on electronics and automation. Failure of certain system components can endanger driver is costly to address. The detection abnormal data crucial for enhancing the reliability, safety, efficiency. This study introduces a novel anomaly-detection method designable generative adversarial network anomaly (DGANomaly). DGANomaly combines augmentation (DGAN) with classification technique. not...
An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead transmission lines demonstrated to be feasible LC-tuned resonators for applications. This VCO can operate from supply voltage 1.6-2.5 V. A single-sideband phase noise -99 dBc/Hz at 1-MHz offset the carrier frequency 33 GHz achieved, together with...
The analysis and design of an inductorless, resistive feedback low noise amplifier using advanced SiGe HBT technology, for application in UWB systems is presented. Measurements show 20 dB gain with 1 variation over the 3 GHz to 10 band, a matched input output less than -10 reflection. A minimum figure 3.05 at increases 4.5 GHz. All these results are comparable that conventional LNAs emitter degenerated inductor, but this LNA has advantage die area previous wideband due lack spiral inductor....
Abstract This article reports a novel crosslinking functionality of the 2‐hydroxyethyl methacrylate unit (HEMA) in presence an acid. The polymeric compositions, consisting polymer containing HEMA and photoacid generator, were insolubilized aqueous base developer on exposure to UV light successive baking process provide negative‐working photoresist. A series poly(benzyl methacrylate‐ co ‐methacrylic acid‐ ‐2‐hydroxyethyl methacrylate) terpolymers with various contents prepared elucidate...
A highly efficient CMOS linear power amplifier for WCDMA applications with feedback bias technique is presented. The method involves connecting the gates of common-gate devices driver stage and in cascode configurations by a network enhancing linearity. To achieve high efficiency linearity simultaneously, large-signal IMD minimum (IMD sweet spot) properly used at desired output level. proposed PA was fabricated 0.18-μm technology. experimental results demonstrate gain 26 dB, maximum dBm...
This paper presents a new predistortion linearization scheme for single-sideband mixers to be used removing unwanted harmonics and intermodulation products of the digital IF in an heterodyne transmitter. The proposed algorithm, called poly-harmonic linearization, relies on orthogonal expansion frequency domain nonlinearities mixer modeling. It takes into account memory effects that are piece-wise quasi-memoryless enables independent cancellation spurious sidebands harmonics. weak-nonlinear...
Fuzzy logic with the Taguchi method is proposed for estimating submerged-arc welding design parameters. Design of experiments based on simulation applied to approach. The finite element analysis a steel plate carried out simulate process using thermomechanical and temperature-dependent material properties. Welding results thermal–mechanical coupled physical phenomena are compared test. fuzzy model generated triangle membership functions if–then rules training data obtained from method....
Due to extensive application prospects and huge market potential of narrowband internet-of-things (NB-IoT), there is growing demand for low-power low-cost system-on-chips (SoCs) a massive number wireless devices. For solution, the most challenging blocks such as an RF transceiver, power amplifier (RF-PA), high-power switching converter have be integrated eliminate need expensive multichip components. To support scenarios NB-IoT, circuits highly efficient regulators are needed simultaneously...
DLL and improved I/O circuits are for 500 Mb/s/pin DDR SDRAM. This digitally-controlled has inherent duty cycle correction capability, enabling fast re-locking upon standby-mode exit. Data input circuits, such as internal delay control digital sense amplifier, reduce setup/hold window to 0.3 ns. The output data driver 62% decreased pattern-dependent skew.
In this work, a novel integrated Doherty power amplifier in 0.18 mum CMOS process is presented for potential WiMax applications at 3.5 GHz. configuration with cascode transistors adopted to achieve high efficiency and output power. The diode linearizer first demonstrated use on the transistor improve linearity of PA. proposed provides maximum 24.44 dBm added (PAE) as 43% GHz operation frequency. At 1-dB compression point PA exhibits 23.63 36.1% PAE. third order inter-modulation (IMD3)...
Abstract In this paper, an algorithm for estimating the best distribution about data containing uncertainties is proposed. The proposed combines sequence statistical modeling (SSM) and a method determining minimum experimental data. SSM selecting using goodness of fit (GoF) test comparison likelihood. used to determine determines needed estimate distribution. presented herein suitable when considering only parametric Thus, in was improved order select correct both non-parametric...
A time-interleaved duobinary encoding scheme for the low-power high-bandwidth memory (HBM) I/O interface is proposed with a 65-nm CMOS process. To reduce power consumption in HBM using multiple through-silicon via (TSV) I/Os, transmitter (TX) that performs signaling voltage-mode driver proposed. small area encoder implemented to generate output and an edge-boosted pre-driver improve slew rate robustness against process, voltage, temperature (PVT) variations of driver. convert signal into...
A single package power amplifier module with a GaAs PA and Si DC/DC converter for WCDMA application is presented. Integration of linear management chip implemented to improve the efficiency at low output by changing supply voltage. Overall performance 27.5dBm identical discrete 16dBm improved from 8 ~ 9% 3.4V voltage 16.8% converter. Receive band noise minimized -135dBm/Hz 190MHz offset reduction techniques in
The strong pressure of cost and size reduction in wireless industry makes the phone makers find new revolutionary solutions for their products. Among various approaches, passive integration is most attractive way. To achieve both goals dramatic additional reduction, we developed low manufacturing technology RF substrate high performance process integrated devices by electrochemically forming thick oxide on Si wafer using Cu metal BCB material interconnection interlayer. fabricated...
A technique for reducing the phase error of DLL/PLLs, due to non-ideal characteristics charge pump, is proposed. It makes output pump virtually grounded, eliminate current mismatch and seamlessly convert locking information into digital form. DLL designed fabricated exhibit duty-cycle corrector performance with a speed 1.4 Gb/s.
To achieve cost and size reduction, we developed low manufacturing technology for RF substrate high performance passive process IPDs (Integrated Passive Devices). The fabricated is conventional 6" Si wafer with SiO/sub 2/ thickness of 25 /spl mu/m on the surface. This showed very good insertion loss 0.03 dB/mm at 4 GHz, including conductive metal loss, in case 50/spl Omega/ coplanar transmission line (W = 50 mu/m, G 20 mu/m). Using BCB (Benzo Cyclo Butene) interlayer 10 Cu plating process,...
The paper describes a robust optimization method to account for the tolerance of design variable and variation in problem parameter. proposed post-optimization effort is initiated from deterministic optimum as baseline. successive process find search directions step sizes toward conducted by determining worst that has highest level constraint violation. During selection design, an orthogonal array table context experiemtns (DOE) used reduce function evaluations especially higher...
This paper examines the feasibility of implementing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip lines, using top and bottom metalization layers (with 3.24 /spl mu/m separation), from 4 layer metal process technology were designed, fabricated, measured up to 110 GHz. These results compared full wave EM simulation gain additional design insight. Additional simulations used explore effects rule changes which do not allow for large extents...
A practical layout method called ground shield microstrip lines (GSML) is investigated for the reliable design of high frequency interconnection on a low resistive silicon substrate. GSML facilitates prediction parasitic networks at expense introducing negligible loss. The microwave performance line structure compared to that conventional metal same standard substrate (20 Omegamiddotcm). Then, applied an 8-GHz SiGe heterojunction bipolar transistor (HBT) voltage-controlled oscillator (VCO)...
The present study aims to develop a new genetic algorithm utilizing population recombination and elitist refinement. Population determines how its sub-population evolve. A whole consists of three major sub-populations: the first is current generation's sub-population, second obtained from pure crossover with another existing third result between random sub-populations. Genetic operations such as reproduction are applied among sub-populations during process recombination. refinement then...