A5101733052- ZnO doping and properties
- Photonic and Optical Devices
- Photonic Crystals and Applications
- GaN-based semiconductor devices and materials
- Semiconductor Lasers and Optical Devices
- Optical Coatings and Gratings
- Quantum Dots Synthesis And Properties
- Solid State Laser Technologies
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Photonic Crystal and Fiber Optics
- Metallic Glasses and Amorphous Alloys
- Solidification and crystal growth phenomena
- Advanced Sensor and Energy Harvesting Materials
- Graphene research and applications
- Material Dynamics and Properties
National Yang Ming Chiao Tung University
2008-2019
National Chi Nan University
2017
Beijing Institute of Graphic Communication
2015
Southern University and Agricultural and Mechanical College
1984
We report on the design of geometry and chip size–controlled structures microscale light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture their performance. The proposed structure, which combines an indium-tin-oxide layer oxide-confined aperture, exhibited not only uniform distribution but also remarkably tight confinement. An extremely high injection level more than 90 kA/cm2 was achieved in micro-LED 5-μm aperture. Current spreading droop mechanism...
Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as top cladding layer upon layer. Optimization of separate-confinement heterostructures laser structure is crucial to improving characteristics providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency with 100 × μm2 area operated...
The ZnO nanorod films were synthesized using zinc acetate-sodium hydroxide aqueous solutions under different synthesis conditions.The effect of conditions on structural properties and morphology was investigated field emission scanning electron microscopy X-ray diffraction.The results demonstrated that the determined by concentration precursors.The predominatant c-axis growth hexagonal lattice observed, which confirmed high-quality obtained.At last, mechanism formation varying morphologies discussed.
We investigate the influence of passivation structure on optical mode distribution and LI characteristics for edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si<sub>3</sub>N<sub>4</sub> or SiO<sub>2</sub> designs, modification dielectric layer thickness can determinate lateral near-field confinement change horizontal far-field (FF) divergence. By increasing film thickness, non-radiation absorption come from Au-Ti be improved it leads to a narrow FF...
Photonic crystal (PhC) laser, with specific merits of low astigmatism, single mode operation and integration into silicon photonic system, has been studied for many years. Compared the edge emitting lasers (EELs), surface light emitters have advantages such as small symmetric divergence angle platform array-based capability. The resonance along in-plane direction preserves high modal gain to overcome optical loss leads lasing action. These designs which superior essential performance that...
We designed and fabricated a two dimensional high contrast subwavelength grating (HCG) mirrors. The computer-aided software was employed to verify the structural parameters including periods filling factors. From optimized simulation results, HCG structure has wide reflection stopband (reflectivity (R) >90%) of over 200 nm, which centered at telecommunication wavelength. mirrors were by electron beam lithography inductively coupled plasma process technique. experimental result almost...
We demonstrate an AlGaInAs saturable absorber with a periodic quantum wells (QWs)/barrier structure that can be used to achieve efficient high-peak-power and high-pulse-energy passively flashlamp-pumped <i>Q</i>-switched Nd:YAG laser at 1.06 um. The barrier layers are designed locate the QW groups in region of nodes lasing standing wave avoid damage. With incident pump voltage 14.5 J, single pulse was generated energy 14 mJ width 13 ns. maximum peak power greater than 1.08 MW.