Lih-Ren Chen

ORCID: 0000-0002-4819-3337
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About
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Research Areas
  • Semiconductor Lasers and Optical Devices
  • Photonic Crystals and Applications
  • Photonic and Optical Devices
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Optical Coatings and Gratings
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Optical Network Technologies
  • Plant Reproductive Biology
  • Orbital Angular Momentum in Optics

National Yang Ming Chiao Tung University
2019-2024

National Sun Yat-sen University
2020

National Taiwan University of Science and Technology
2020

We study the impact of strain engineering by exploring influence number superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on optical properties InxGa1–xN/GaN MQWs grown patterned sapphire metal–organic chemical vapor deposition while retaining same composition and MQW periods. X-ray diffraction reciprocal space mapping show that initially increases with SLs in structure followed a slight relaxation. Scanning electron microscopy analysis indicates desired is obtained...

10.1021/acsaom.3c00406 article EN other-oa ACS Applied Optical Materials 2024-01-02

With the significant technology advancement in photonic integration and demands of compact light sources multiple wavelengths, multiwavelength laser arrays (MWLAs) can play important roles high-capacity optical signal transmission, switching, sensing. Manufacturing with semiconductor foundries electronic integrated circuits bring not only advanced technologies but also new concepts for realizing MWLAs. This paper will first overview existing development then discuss challenges possible...

10.1063/5.0004074 article EN Applied Physics Letters 2020-05-04

Photonic-crystal surface-emitting laser (PCSEL) holds promise for beam with high efficacy while retain the small divergence angle, being now all rage as source in modern opto-electronic technologies to replace edge emitting lasers and vertical-cavity (VCSELs). Arbitrary shaping deflection of VCSELs ultra-thin flat optics, aka metasurfaces, has recently demonstrated, making possibility realize a compact system many technologies. However, large angle limited output power at single fundamental...

10.1109/jlt.2022.3199022 article EN Journal of Lightwave Technology 2022-08-15

In this study, we present high-performance photonic-crystal surface-emitting lasers (PCSELs) operating at short wavelength infrared (SWIR) band of approximately 1580 nm. These PCSELs demonstrate impressive output power exceeding 200 mW and exhibit a remarkably low divergence angle 1 degree. Through numerical simulations, optimize the PCSEL design by analyzing threshold gain loss components for various PC patterns. The experimental results confirm PCSELs' high brightness circular beams. Our...

10.1109/jlt.2024.3390989 article EN Journal of Lightwave Technology 2024-08-01

Abstract We designed and fabricated a photonic crystal surface emitting laser (PCSEL) with vertically integrated diffractive optical elements on their top to study the mechanism of static beam steering single chip. The deflected output by self-formed periodic ITO cladding layer PCSEL can be further steered changing grating period azimuthal angle gratings relative crystal. Through analysis band structure lasing characteristics, is coupled band, whereas serves function only. findings pave way...

10.1038/s41598-021-82194-4 article EN cc-by Scientific Reports 2021-01-28

We study a metal organic chemical vapor deposition regrowth process for electrically driven photonic-crystal surface-emitting lasers (PCSELs). The (PC) structure consisting of air voids embedded in semiconductor materials is fabricated on the topmost p-GaAs layer base-epitaxial wafer followed by p-Al0.45GaAs and p+-GaAs contact layer, consecutively. effect both ex situ surface treatment before processes together with parameters are investigated. O2 plasma treatment, one steps, found to be...

10.1021/acs.cgd.1c00280 article EN Crystal Growth & Design 2021-05-07

Vortex beams offer significant potential for various applications in fields such as communication, quantum computing, and particle manipulation. Typically, these are generated by using laser light that passes through a passive phase modulation component. In recent years, there has been an increasing emphasis on miniaturizing integrating the vortex beam source, aimed at expanding range of applications. Our study contributes to this goal presenting novel method directly generating vector from...

10.1021/acsphotonics.3c00561 article EN cc-by ACS Photonics 2023-11-28

High-power lasers emitting in the L band wavelength range are highly desirable for various applications, including light detection and ranging, industrial military gas sensing, optical communication. In this study, we present our research on InP-based photonic-crystal surface-emitting (PCSELs) designed to achieve high-power emission while maintaining a compact device size. To enable vertical laser emission, incorporated embedded air voids within 2D photonic crystal (PC) structure by...

10.1021/acs.cgd.3c00849 article EN Crystal Growth & Design 2023-10-17

Abstract Photonic-crystal surface-emitting lasers have many promising properties over traditional semiconductor and are regarded as the next-generation laser sources. However, minimum achievable lasing threshold of PCSELs is still several times larger than that VCSELs, limiting its applications especially if required power small. Here, we propose a new design reduces gain region in lateral plane by using selective quantum-well intermixing to reduce current PCSELs. By performing theoretical...

10.1186/s11671-023-03911-8 article EN cc-by Discover Nano 2023-10-30

The characteristics of different confined structures AlGaInP/GaInP laser diodes grown by low-pressure multi-wafer metal-organic chemical vapor deposition have been discussed in this work. constraint effect on the light and carriers confining layers has analyzed as well. To enhance efficiency, relatively low refractive index AlInP was adopted cladding layer, which doping level p- layer over 1 X 10<SUP>18</SUP> cm<SUP>-3</SUP>. Meanwhile, GRIN-SCH were applied to achieve optimum constraints...

10.1117/12.380553 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2000-03-29
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