A5031687051- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- 2D Materials and Applications
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Advanced Photocatalysis Techniques
- Advanced Chemical Physics Studies
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Dental materials and restorations
- Solar-Powered Water Purification Methods
- Optical properties and cooling technologies in crystalline materials
- Risk and Safety Analysis
- Spectroscopy and Quantum Chemical Studies
- Advanced NMR Techniques and Applications
- Luminescence Properties of Advanced Materials
- Microwave Engineering and Waveguides
- Photochemistry and Electron Transfer Studies
- MXene and MAX Phase Materials
- Dental Anxiety and Anesthesia Techniques
- Various Chemistry Research Topics
- Radical Photochemical Reactions
King Abdullah University of Science and Technology
2018-2024
Taif University
2020-2022
Ministry of Industry and Information Technology
2022
King Saud bin Abdulaziz University for Health Sciences
2022
Princess Nourah bint Abdulrahman University
2022
Gwangju Institute of Science and Technology
2020
Hunan Normal University
2019
Xidian University
2016-2017
Applied Science and Technology Research Institute
2009
Abstract The structural, electronic, and optical properties of β-Ga 2 O 3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory. Based the defects formation energies, we conclude most stable in their fully charge states. electronic structures calculated Generalized Gradient Approximation + U formalisms Hubbard parameters set 7.0 eV 8.5 for Ga ions, respectively. bandgap is 4.92 eV, which consistent experimental value. static real...
The rapid development of halide perovskite synthesis offers the opportunity to fabricate high-quality nanocrystals (NCs), whose structural uniformity can lead assembled supra-structures with improved device performance and novel collective properties. Light is known significantly affect structure properties perovskites plays a crucial role in growth assembly their crystals. Nevertheless, light-induced mechanisms NCs are not yet clearly understood. In this work, we performed systematic study...
In this study, β-Ga2O3 thin films were directly deposited on sapphire substrates by radio-frequency magnetron sputtering. The effects of post-annealing temperature and oxygen concentration during sputtering the structural optical properties investigated in detail. results indicated that crystalline quality improved with increasing temperature. When 1 vol. % was included deposition process, film displayed best quality, band gap atomic ratios O to Ga increased, content vacancies effectively...
All-inorganic lead halide perovskites are promising materials for many optoelectronic applications. However, two issues that arise during device fabrication hinder their practical use, namely, inadequate continuity of coated inorganic perovskite films across large areas and inability to integrate these with traditional photolithography due poor adhesion wafers. Herein, the first time, address issues, we show a room-temperature synthesis process employed produce CsPbBr3 nanocrystals...
Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating novel enhanced photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized p-CuO micro-pyramids. Self-assembled catalyst-free micro-pyramid arrays are fabricated pre-ablated Si substrate pulsed laser deposition without need for catalyst layer or seeding, while the QDs synthesized femtosecond-laser ablation liquid technique. The...
Abstract High‐energy radiation detectors such as X‐ray with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite‐based detector is reported. The nature of perovskite materials revealed through optical characterizations, time‐resolved photoluminescence (TRPL), theoretical simulations, demonstrating that the differences in temperature‐dependent carrier lifetime related to CsPbX...
Solution-processed deep ultraviolet (DUV) photodetectors based on wide band gap oxide semiconductors (WBGS) working in the <280 nm wavelength range are drawing increasing attention of research community because their cost-effective production and potential use diverse applications. Here, we report synthesis novel core-shell amorphous gallium nanoparticles (NPs) (a-Ga2Ox/GaOx NPs) that have not been previously obtained. The NPs were synthesized from nitride using femtosecond laser ablation...
A highly crystalline single- or few-layered 2D-MoS2 induces a high dark current, due to which an extremely small photocurrent generated by few photons can be veiled distorted. In this report, we show that suppression in the current with enhancement of 2D-based photodetector, is prerequisite for photoresponse enhancement, achieved constructing ideal p-n junction based on functionalizing n-type p-type quantum dots (QDs). Highly solution-processed manganese oxide QDs (MnO QDs) are synthesized...
Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the region (<290 nm). In this work, we mitigate aforementioned issues by demonstrating a facile process for high-responsivity solar-blind photodetector based on p-n WBGS heterojunction structure, under ambient conditions. Here, structures n-type ultra-wide WBGSs (i.e. both are characterized...
We study the impact of strain engineering by exploring influence number superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on optical properties InxGa1–xN/GaN MQWs grown patterned sapphire metal–organic chemical vapor deposition while retaining same composition and MQW periods. X-ray diffraction reciprocal space mapping show that initially increases with SLs in structure followed a slight relaxation. Scanning electron microscopy analysis indicates desired is obtained...
Obtaining p-type wide-bandgap semiconductors with a bandgap &gt;3.5 eV is still challenging. Here, p–n junction devices based on (≥4 eV) MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, Raman spectroscopy reveal QD crystal...
To develop a stable and reliable two-dimensional (2D) tungsten disulfide (WS2)-based photodetector (PD), it is essential to address the issue of interfacial defects that are unavoidably formed at interface between WS2 metal contact as such can markedly deteriorate photoresponse characteristics. In this work, drawback mitigated by adopting facile technique for passivating surface with an ultrathin TiO2 film. The interlayer deposited on 2D via 20 cycles atomic layer deposition prior proceeding...
Microfluidic technologies are used to precisely manipulate fluid flow integrate solution-processed materials in semiconductor devices. Here, a microfluidic method for incorporating perovskite into semiconductor-based devices is developed by embedding microwires (MWs) Si microchannel platforms. The relies on pumping solution containing from the source be injected arrays using filter paper that acts as mesh of nano-/micropumps, owing capillary forces. Mask-free laser interference lithography...
Abstract The conical intersections corresponding to the C─O and C─C ring opening were optimized reaction paths traversing these obtained. Investigation of revealed that when lowest energy intersection, path returns closed geometry. intersection featuring torsion terminal CH 2 group however, led a ring‐opened geometry, an H‐shift formation acetaldehyde can undergo further dissociation. observation different was explained by 3‐D from quantum theory atoms in molecules (QTAIM) defined most...
Abstract A balanced treatment of the covalent and ionic contributions to ground excited states originating from torsion about double bonds is known be strongly dependent on presence dynamic electron correlation. We undertake an analysis minimum energy pathways corresponding deactivation first singlet state PSB3. In doing so we consider three including other intramolecular degrees freedom, such as bond length alternation. The 3‐D bond‐path provides a new ‘bond‐localized orbital‐like’...
We investigate the optical and structural properties of GaN InGaN nanowires (NWs) fabricated by metal-assisted electroless etching in a hydrofluoric acid (HF) solution. The emission spectra NWs exhibit red shift compared to as-grown samples resulting from an increase surface-to-volume ratio stress relaxation these nanostructures. carrier lifetimes were measured. In addition, density functional theory (DFT) investigations carried out on using generalized gradient approximation (GGA),...
Organometal halide perovskite photodetectors have recently drawn significant attention due to their excellent potential perform as broadband photodetectors. However, the photoresponse in ultraviolet (UV) spectrum can be improved by introducing wide bandgap semiconductors. In this work, we report on a methylammonium lead iodide/p-type gallium nitride (MAPI/p-GaN) heterojunction photodetector. We demonstrate that device is capable of detecting UV region p-GaN being hybridized with MAPI....
Despite the recent growing interest in 2D-MoS2 nanostructures for versatile platforms of sensor applications, robust and practical have rarely been reported to date due absence a facile, scalable, repeatable nanofabrication method. Herein, we show fabrication periodically aligned nanoribbon (MNR) array with an area 2.25 cm2 via direct metal transfer. The MNR width is scalable from 463 nm 135 at 650 pitch, smallest approximately 80 nm. stable material characteristics are analyzed various...
Abstract Tunneling pathways of the flip rearrangement between permutation‐inversion isomers corresponding to energetically degenerate global energy minima (H 2 O) 5 are analyzed in terms electronic structure. We demonstrate that charge density‐based scalar measures quantify responses bonding and we discovered a high degree continuity values depend on presence sliding motion bond critical point relative oxygen atom. The can distinguish pairs everywhere except at transition state due...