A5030016355- Nuclear Materials and Properties
- Fusion materials and technologies
- Advanced ceramic materials synthesis
- Nuclear materials and radiation effects
- Advanced Semiconductor Detectors and Materials
- Radiation Detection and Scintillator Technologies
- Ion-surface interactions and analysis
- Radiation Effects in Electronics
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies
- Nuclear Physics and Applications
- solar cell performance optimization
- Advanced Radiotherapy Techniques
- Glass properties and applications
- Semiconductor materials and devices
- Graphite, nuclear technology, radiation studies
- Muon and positron interactions and applications
- CCD and CMOS Imaging Sensors
- Infrared Target Detection Methodologies
- Nuclear reactor physics and engineering
- Silicon Carbide Semiconductor Technologies
- Advanced X-ray and CT Imaging
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Nuclear and radioactivity studies
Osaka Metropolitan University
2023
Osaka Prefecture University
2016-2021
National Institute of Advanced Industrial Science and Technology
2017
Toyota Technological Institute
2017
Scientific Consulting Group
2017
Japan Aerospace Exploration Agency
2017
Japan Atomic Energy Agency
2017
Shizuoka University
2016
Kyoto University
2006-2015
Kyoto Katsura Hospital
2013
The United States and Japan have collaborated on fusion materials research in a series of agreements reaching back to 1981. PHENIX collaboration is the latest U.S.-Japan project which spans 2013 2019 has goal assessing technical feasibility tungsten-based, helium-cooled plasma-facing component concepts for demonstration power reactor (DEMO). Task 2 within focused evaluating neutron irradiation effects tungsten. For tungsten, transmutation Re Os at least as important determining its...
Abstract The effect of gamma irradiation on two types (superstrate‐ and substrate‐type) CdS/CdTe photodiodes, which we have proposed as potential photoconducting films for compact image sensors with a field emitter array (FEA), was investigated. A 60 Co gamma‐ray source employed, the total dose more than 500 kGy. For superstrate‐type structure, caused short‐circuit current density ( J SC ) to decrease, probably due resulting decreased transmittance glass substrate. On other hand, little...
A field emission image sensor (FEIS) that consists of a emitter array (FEA) and cadmium telluride-based diode was proposed for use in the nuclear decommissioning Fukushima Daiichi power plant. FEAs telluride/cadmium sulfide were irradiated with γ-rays dozen times, each dose irradiation 100 kGy, until accumulated reached 1 MGy. Electron properties photovoltaic evaluated after irradiation. Neither nor showed significant deterioration their current-voltage characteristics. test tube FEIS...
InGaP solar cells are not predicted to be susceptible displacement damage by irradiation with electrons at energies lower than 100 keV from non-ionizing energy loss (NIEL) calculations. However, it is recently observed that shown degrade 60 electrons. This degradation considered caused radiation defects but clear. In this study, the kind of generated found deep-level transient spectroscopy (DLTS). The result DLTS indicates prediction primary knock-on atoms using model different experiment....
A research project on the development of radiation tolerant compact image sensor with a field emitter array started in 2013. The purpose is to develop key components that has sufficiently high tolerance, as step investigate interior nuclear reactor Nuclear Power Plant Fukushima 1st. volcano-structured double-gated Spindt-type now under development. As photoconductor, layer cadmium telluride and sulfide adopted. Fundamental characteristics these together tolerance are examined.
Abstract A high-resolution electron microscopy study has been carried out on a sintered β-Si3N4 specimen which had neutron irradiated to dose of 2.8 × 1026 neutrons m−2 (E > 0.1 MeV) at 793 K in the experimental fast reactor JOYO. The Burgers vector neutron-induced interstitial dislocation loops was found be about (1/18)〈2429〉 (=⅙〈023〉), corresponding an extra layer SiN4 tetrahedra inserted into {1010} planes. Based image simulation and crystal chemical considerations, suitable structural...