A5005219691- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Reliability and Maintenance Optimization
- Statistical Distribution Estimation and Applications
- Advanced Battery Technologies Research
- Electrostatic Discharge in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Probabilistic and Robust Engineering Design
Universität der Bundeswehr München
2017-2020
As mission profiles start to become an essential part of reliability requirements and qualification in the automotive industry, processing multi-dimensional with combined stressors requires special attention. We present a method reduce effective resulting acceleration factors as means dealing for testing. This is elaborated on first reported iterative step-stress TDDB failure measurement coupled temperature voltage stresses. Furthermore, impact interdependent predictions, testing,...
Mission profiles and step-stress life tests are depending on cumulative damage models for reliability analysis. Although exist, they rarely verified empirical data of semiconductor devices. In this work, devices from GLOBALFOUNDRIES' 22FDX <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> technology tested dielectric breakdown. The applied stress is an alternating temperature the results compared with simulated failure behavior CE TFR...
Cumulative damage models are essential for reliability analysis, whether it is the development of time-saving step-stress or ramp-stress life tests qualification products against mission-profile-based lifetime requirements. Although many cumulative have been proposed in literature, discussion on them rarely based empirical data. In order to contribute experimental investigation those models, three well-established tested their validity. Thus, exposure, tampered random variable, and failure...