Josef Biba

ORCID: 0000-0002-1755-5593
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About
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Research Areas
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Nanowire Synthesis and Applications
  • 2D Materials and Applications
  • Silicon Nanostructures and Photoluminescence
  • Neuroscience and Neural Engineering
  • Reliability and Maintenance Optimization
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon and Solar Cell Technologies
  • Ga2O3 and related materials
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Perovskite Materials and Applications
  • Probabilistic and Robust Engineering Design
  • Statistical Distribution Estimation and Applications
  • MXene and MAX Phase Materials
  • Electrostatic Discharge in Electronics
  • Advanced Battery Technologies Research
  • Near-Field Optical Microscopy
  • Force Microscopy Techniques and Applications

Universität der Bundeswehr München
2009-2023

Bundeswehrkrankenhaus
2021

Czech Academy of Sciences, Institute of Physics
2021

Abstract 2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer‐dependent tunable bandgap, low‐temperature growth, environmental stability. Here, the conformal area selective (AS) growth of PtSe 2 is presented defining a new paradigm for integration. The thermally‐assisted conversion which deposited by AS atomic layer deposition...

10.1002/adfm.202103936 article EN cc-by-nc-nd Advanced Functional Materials 2021-08-16

Abstract Controllable and reproducible synthesis of 2D materials is crucial for their future applications. Chemical vapor deposition (CVD) promises scalable high‐quality growth materials. However, to optimize CVD growth, multiple parameters have be carefully selected. Design experiments (DoE) a consistent versatile tool all simultaneously in controlled way. This study exploits DoE statistical approaches show how the transition metal dichalcogenides (TMDs) can optimized, using tungsten...

10.1002/aelm.202300281 article EN cc-by Advanced Electronic Materials 2023-07-23

Silicon field emitter arrays (FEAs) with different tip sizes and quantities were fabricated by saw dicing anisotropic wet chemical etching tetramethylammonium hydroxide. The is formed the rates of crystal facets leading to a sharp pyramid based on {103} planes top hexadecagon {331} {221} bottom. Electrical measurements at 10−5 mbar up 10 μA show good reproducibility for FEAs same process parameters higher uniformity stability an increasing number tips. Constant current conditions mean...

10.1116/6.0000466 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2021-01-01

As mission profiles start to become an essential part of reliability requirements and qualification in the automotive industry, processing multi-dimensional with combined stressors requires special attention. We present a method reduce effective resulting acceleration factors as means dealing for testing. This is elaborated on first reported iterative step-stress TDDB failure measurement coupled temperature voltage stresses. Furthermore, impact interdependent predictions, testing,...

10.1016/j.microrel.2019.06.015 article EN cc-by-nc-nd Microelectronics Reliability 2019-09-01

Mission profiles and step-stress life tests are depending on cumulative damage models for reliability analysis. Although exist, they rarely verified empirical data of semiconductor devices. In this work, devices from GLOBALFOUNDRIES' 22FDX <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> technology tested dielectric breakdown. The applied stress is an alternating temperature the results compared with simulated failure behavior CE TFR...

10.1109/irps.2019.8720536 article EN 2022 IEEE International Reliability Physics Symposium (IRPS) 2019-03-01

Cumulative damage models are essential for reliability analysis, whether it is the development of time-saving step-stress or ramp-stress life tests qualification products against mission-profile-based lifetime requirements. Although many cumulative have been proposed in literature, discussion on them rarely based empirical data. In order to contribute experimental investigation those models, three well-established tested their validity. Thus, exposure, tampered random variable, and failure...

10.1116/6.0000504 article EN cc-by Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2020-09-28

Currently, security issues for semiconductor chips are counterfeiting and night shift problems. These factors might lead to insecure supply chains in the automotive industry. This can be avoided by using coating Physical Unclonable Functions (PUFs). The applied every chip order create a unique fingerprint. In this work, 2-bit key per capacitor is presented first time. For reason, 49 on wafer with 195 metal oxide (MOS) capacitors were fabricated. A large random fluctuation of capacitances was...

10.1109/jeds.2022.3149321 article EN cc-by IEEE Journal of the Electron Devices Society 2022-01-01

The use of physical unclonable functions (PUFs) to generate fingerprints for authentication chips or larger electronic systems generation internal cryptographic keys data transfer is investigated. With the implementation PUFs, each chip system has its own identity, which should prevent counterfeiting and "night shift" problems. There are various approaches creating one them so-called coating PUF, would open way cost-effective flexible protection during after fabrication. In this work, we...

10.1109/icicm54364.2021.9660305 article EN 2022 7th International Conference on Integrated Circuits and Microsystems (ICICM) 2021-10-22

A phosphosilicate polymer spin-on glass dopant has been adapted to produce a screen printable N-type diffusion pastes using different types of nanoparticles as functional additives quantitatively change the doping strength paste. Strong qualitative and quantitative differences in resulting phosphorous concentration profiles after have found between compositions. Not only is an intermediate level obtainable if silicon are used instead silica but also shallower depth achieved. The electrical...

10.1115/1.4031944 article EN Journal of Solar Energy Engineering 2015-11-05

A novel silicon field emission source is presented, which fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher density leads lower height. Very similar characteristics observed for all geometries. Emission currents of 10 μA are obtained at electrical fields 6-8 V/μm. The changes in after h regulated current μmA pressure <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ivnc49440.2020.9203262 article EN 2020-07-01

Thin films of carbonaceous materials, such as organic semiconductors and carbon nanotubes, continue to show promise for various novel electronics applications, especially where flexibility large-area processing are important factors. In particular, exciting progress has recently been made in the development flexible nanoscale high-frequency transistors circuits. addition, new application spaces emerge electronics. Here, a burgeoning opportunity field physical unclonable function (PUF) is...

10.1109/ifetc53656.2022.9948438 article EN 2022-08-21
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