Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening path toward co-integration active and...

Topological insulating graphene is created using decoration of an extremely small quantity heavy nanoparticles.

Abstract Non-reciprocal electronic transport in a material occurs if both time reversal and inversion symmetries are broken. The superconducting diode effect (SDE) is an exotic manifestation of this type behavior where the critical current for positive negative currents mismatched, as recently observed some non-centrosymmetric superconductors with magnetic field. Here, we demonstrate SDE non-magnetic Nb/Ru/Sr 2 RuO 4 Josephson junctions without applying external cooling history dependence...

One of the remaining issues concerning spin-triplet superconductivity ${\text{Sr}}_{2}{\text{RuO}}_{4}$ is strong limit in-plane upper critical field ${H}_{\text{c}2}$ at low temperatures. In this study, we clarified dependence on angle $\ensuremath{\theta}$ between magnetic and $ab$ plane various temperatures, by precisely accurately controlling direction. We revealed that, although temperature for $|\ensuremath{\theta}|\ensuremath{\ge}5\ifmmode^\circ\else\textdegree\fi{}$ well explained...

Abstract A spontaneous symmetry breaking in a system often results domain wall formation. The motion of such walls is utilized to realize novel devices like racetrack-memories, which moving ferromagnetic store and carry information. Superconductors time reversal can also form domains with degenerate chirality their superconducting order parameter. Sr 2 RuO 4 the leading candidate chiral p -wave superconductor, expected be accompanied by structure. Here, we present that Nb/Ru/Sr topological...

Experimental methods are presented for the determination of fracture initiation toughness ceramics and ceramic composites in pure tension under quasi‐static dynamic loading conditions over a range temperature spanning 20° to 1300°C. Circumferentially notched cyclic fatigue precracked rods variety materials were subjected tensile (rate stress intensity factor loading, K 1 ∼ 0.1 MPa m 1/2 s −1 ) an electroservohydraulic test machine ( 10 6 · using modified Kolsky (split‐Hopkinson) bar. For...

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards development of voltage-controlled spintronic devices with low-power dissipation. Members 2D transition metal dichalcogenides have been recently predicted experimentally reported as a class TI materials, but most cases edge conduction seems fragile limited to monolayer phase fabricated on specified substrates. Here, we realize controlled patterning 1T^{'}...

We devise an unconventional proximity junction configuration where $s$-wave superconductivity and the of Sr${}_{2}$RuO${}_{4}$ interfere with each other. reproducibly observe in such a Pb/Ru/Sr${}_{2}$RuO${}_{4}$ single Pb electrode that critical current ${I}_{\mathrm{c}}$ drops sharply just below bulk ${T}_{\mathrm{c}}$ furthermore increases again certain temperature ${T}_{\mathrm{c}}$. In order to explain this dependence ${I}_{\mathrm{c}}$, we propose competition effect involving...

Single crystals of the Sr$_2$RuO$_4$-Ru eutectic system are known to exhibit enhanced superconductivity at 3~K, in addition bulk Sr$_2$RuO$_4$ 1.5~K. The 1.5-K phase is believed be a spin-triplet, chiral $p$-wave state with multi-component order parameter, giving rise domain structure. In contrast, 3-K attributable strained interface region between Ru inclusion few tens micrometers size and surrounding Sr$_2$RuO$_4$. We investigate dynamic behavior topological junction, where superconductor...

We fabricate several unconventional proximity junctions of Sr 2 RuO 4 and Pb with the precise control junction configurations achieved using a focused-ion beam. observe sharp drop critical current just below transition temperature bulk irrespective Ru arrangement in junctions. further demonstrate that essential configuration giving rise to such an anomalous is single Pb/Ru/Sr junction. The suppression ascribable topological superconducting order parameter .

The introduction of spin–orbit interactions (SOIs) and the subsequent appearance a two-dimensional topological phase are crucial for voltage-controlled zero-emission energy spintronic devices. In contrast, graphene basically lacks SOIs due to small mass carbon atom, appropriate experimental reports rare. Here, we control small-amount (cover ratios <8%) random decoration heavy nanoparticles [platinum (Pt) or bismuth telluride (Bi2Te3)] onto monolayer by developing an original...

We demonstrate a drastic improvement in the efficiency of rare-element-free graphene nanomesh (GNM) magnets with saturation magnetization values as large ∼10−4 emu/mm2, which are 10–100 times greater than those previous GNM hydrogenated by only annealing under hydrogen molecule (H2) atmosphere, even at room temperature. This is realized significant increase area mono-H-terminated pore edges using silsesquioxane resist treatment electron beam irradiation, can produce mono-H detaching...

We provide evidence for spin-triplet electron pairing in proximity-induced superconductivity a ferromagnetic semiconductor (In,Fe)As. As discovered half-metallic materials, an extraordinarily long proximity range is observed. More surprising very strong concentration of supercurrent to the edges superconducting region, which deduced from extremely persistent oscillation critical current vs magnetic field. The maxima appear not at zero flux but around maximum disorder, reflecting connectivity...

A 0.5- mu m SICOS (sidewall base contact structure) technology is discussed. U-groove isolation and fabrication reduce the transistor size to 60 m/sup 2/. The use of a reduced-resistance polysilicon electrode shallow epitaxial layer improves emitter-coupled logic (ECL) gate delay time by 20% 30%, respectively. typical 29 ps minimum 27 at switching current 1.2 mA an emitter 0.4 m*2.4 were realized. This isolated device suitable for very-high-speed VLSIs.< <ETX...

Atomically thin (or few-layer) two-dimensional transition metal dichalcogenide (TMDC) materials have various unique optoelectronic properties, which bring advantages for application to flexible solar cells and photodetectors, by bandgap engineering via van der Waals hybridization. TMDCs crystal phase structures, such as the 2H semiconducting 1T 1T′) metallic phase. Recently, we demonstrated creation of few-atom-layer 1T-metal/2H-semiconductor molybdenum disulphide (MoS2) lateral Schottky...

The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset materials research. While large bulk gaps with vanishing edge in atomically thin layers have been reported, verifications QSH by resistance measurements are comparatively few. This is partly due to poor uniformity gap induced substrate over a sample area and/or defects oxidation. Here, we report observation at room-temperature 1T'-phase few-layer MoS2 patterned onto 2H...

We have clarified how the enhanced superconductivity, often referred to as 3-K phase develops in Sr 2 RuO 4 –Ru eutectic system. From detailed ac and dc susceptibility measurements on well-characterized crystals, we revealed strongly anisotropic shielding, governed by direction of screening current dominated within plane rather than orientation Ru lamellae. The onset temperature superconductivity probed diamagnetic is high 3.5 K. dependence shielding above around K well ascribed interfacial...

Phase-sensitive measurements of direct-current superconducting quantum interference devices (dc-SQUIDs) composed ${\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$-Ru eutectic crystals have been performed to temperatures below a bulk Ru transition temperature at 0.49 K. A SQUID with $\mathrm{Nb}/\mathrm{Ru}/{\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}$ junctions fabricated on one inclusion exhibits two distinct transitions due the and competition proximity-induced gaps junctions. At sufficiently low temperatures,...

A shear building supported by a prescribed pile–soil system is subjected to bedrock earthquake input. new design procedure presented for generating sequence of stiffness designs satisfying the constraints on interstorey drifts. The mean peak drifts set spectrum-compatible ground motions at are evaluated modal combination rule. Tuning fundamental natural period with fixed base that beam results in non-monotonic respect parameter and previous approaches cannot be applied such problem. This...

Structural components made of carbon/graphite fibre-reinforced polymers (CFRP) are frequently deployed in environments where solid particle impacts can generate surface degradation and damage. Recently, several nondestructive evaluation methods have been proposed to detect any damages for composite materials. However, many them not suited real-time health monitoring large scale due their complexity cost. This study proposes a new system quantify the extent damage using carbon fibres...

Here, we have realized the extremely light hydrogenation of a graphene surface on SiO₂ by precisely controlling amount electron beam (EB) irradiation to specific EB resist including hydrogen atoms, treated graphene.

We have studied the upper critical field Hc2 of spin-triplet superconductor Sr2RuO4. For H || c, increases linearly with decreasing temperature down to well below Tc = 1.5 K, consistent orbital depairing effect. However, for ab, increase is strongly suppressed 1 K. The origin this in-plane limit has been actively discussed, but its mechanism still unclear. In present study, we performed ac susceptibility measurements in applied fields higher accuracy than previous studies obtain...

Among various atomically thin two-dimensional materials, molybdenum disulphide (MoS2) is attracting considerable attention because of its direct energy bandgap in the 2H-semiconducting phase. On other hand, a 1T-metallic phase, which very important for unique applications, has been created by methods. Recently, we demonstrated creation in-plane 1T-metal/2H-semiconductor MoS2 lateral Schottky junctions using electron beam irradiation techniques and revealed their electrical properties. Here,...