A novel system of nanostructures is described consisting nonlithographically produced arrays nano-wires directly electrodeposited into porous anodic aluminum oxide templates. Using this method regular and uniform metal or semiconductor nano-dots can be created with diameters ranging from /spl sim/5 nm to several hundred nanometers areal pore densities in the sim/10/sup 9/-10/sup 11/ cm/sup -2/ range. We report on present state their fabrication, properties, prospective device applications....

We report that entirely end-bonded multiwalled carbon nanotubes (MWNTs) can exhibit superconductivity with a transition temperature (${T}_{c}$) as high 12 K, which is approximately 30 times greater than ${T}_{c}$ reported for ropes of single-walled nanotubes. find the emergence this highly sensitive to junction structures Au electrode/MWNTs. This reveals only MWNTs optimal numbers electrically activated shells, are realized by end bonding, allow due intershell effects.

Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening path toward co-integration active and...

Superconductivity in carbon nanotubes (CNTs) is attracting considerable attention. However, its correlation with carrier doping has not been reported. We report on the Meissner effect found thin films consisting of assembled boron (B)-doped single-walled CNTs (B-SWNTs). find that only B-SWNT low concentration leads to evident ${T}_{c}=12\text{ }\text{ }\mathrm{K}$ and also a highly homogeneous ensemble B-SWNTs crucial. The first-principles electronic-structure study strongly supports these results.

Abstract Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two‐dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so‐called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there only few reports on layers with large twist angles θ t , interfacial Josephson using...

The rapid advancement of deep learning (DL) has significantly expanded its application across various fields, including physics and materials science. DL facilitates the prediction physical parameters without need for time-consuming labor-intensive experiments. Atom-vacancy defects, present in responsible intriguing phenomena, exhibit diverse are a prime example such applications. These tendencies even more pronounced two-dimensional (2D) (atomically) thin van der Waals layers. However,...

Theoretically, the so-called zigzag edge of graphenes provides localized electrons due to presence flat energy bands near Fermi level. Spin interaction makes spins strongly polarized, yielding ferromagnetism. However, in most experimental studies, ferromagnetism has been observed uncontrollable and complicated carbon-based systems. Here, we fabricate with honeycomblike arrays hexagonal nanopores, which have a large ensemble hydrogen-terminated low-defect pore edges that are prepared by...

Topological insulating graphene is created using decoration of an extremely small quantity heavy nanoparticles.

Coulomb blockade (CB) was observed in Al/aluminum oxide/Ni nanowire single-junction arrays fabricated by electrochemical deposition of Ni into porous aluminum oxide nanotemplates. The bias dependence the tunneling current and temperature zero-bias anomalies spectra are shown to accord well with theory Nazarov for CB systems where leads play a significant role. Direct scanning microscopy measurements resistance confirms it be regime required theory.

Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials challenging the realization spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation creation full spectrum beyond-CMOS spin-based nano-devices. In present article, recent advancements in graphene spintronics reviewed, introducing observation coherence Hall effect. Some research has...

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards development of voltage-controlled spintronic devices with low-power dissipation. Members 2D transition metal dichalcogenides have been recently predicted experimentally reported as a class TI materials, but most cases edge conduction seems fragile limited to monolayer phase fabricated on specified substrates. Here, we realize controlled patterning 1T^{'}...

The so-called zigzag edge of graphenes theoretically has localized electrons due to the presence flat energy bands near Fermi level. electron spins are strongly polarized, resulting in ferromagnetism. We fabricate with honeycomb-like arrays hydrogen-terminated and low-defect hexagonal nanopores by a nonlithographic method using nanoporous alumina templates. report large-magnitude room-temperature ferromagnetism caused localizing at nanopore edges. This promises be realization rare-element...

The so-called zigzag edge of graphenes has localized and strongly spin-polarized electrons. However, magnetoresistance (MR) behavior associated with the electrons not been reported in graphenes. Here, we measure MR graphene antidot-lattices, honeycomb-like arrays hexagonal antidots a large ensemble hydrogen-terminated low-defect antidot edges, prepared by nonlithographic method using nanoporous alumina templates. We find anomalous oscillations arising from electron spins existing at edges....

We report on Coulomb blockade in a single tunnel junction directly connected to multiwalled carbon nanotube (MWNT) by utilizing nanoporous alumina film. The MWNT exhibits weak localization effect with strong spin flip scattering. Experimental results and analysis suggest that high-impedance external environment caused the can yield blockade, accordance phase correlation theory system. It is also revealed very sensitive modulation MWNT, which acts as transmission line.

Using magnetic rare-metals for spintronic devices is facing serious problems the environmental contamination and limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation polarized electron spins spontaneously driven from pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here,...

We report on Coulomb blockade caused by the high impedance external electromagnetic environment (EME) related to a localization effect in single tunnel-junction/carbon-nanotube system. Observed blockade, supported linear temperature dependence of zero-bias conductance, mathematically follows phase correlation theory, which explains roles EME and implies that tunneling electrons is suppressed transferring energy its with total ${Z}_{t}(\ensuremath{\omega})$ higher than quantum resistance. Our...

Magnetism arising from edge spins is highly interesting, particularly in 2D atomically thin materials which the influence of edges becomes more significant. Among such materials, molybdenum disulfide (MoS2; one transition metal dichalcogenide (TMD) family) attracting significant attention. The causes for magnetism observed TMD family, including MoS2, have been discussed by considering various aspects, as pure zigzag atomic-structure edges, grain boundaries, and vacancies. Here, we report...

The introduction of spin–orbit interactions (SOIs) and the subsequent appearance a two-dimensional topological phase are crucial for voltage-controlled zero-emission energy spintronic devices. In contrast, graphene basically lacks SOIs due to small mass carbon atom, appropriate experimental reports rare. Here, we control small-amount (cover ratios <8%) random decoration heavy nanoparticles [platinum (Pt) or bismuth telluride (Bi2Te3)] onto monolayer by developing an original...

We demonstrate a drastic improvement in the efficiency of rare-element-free graphene nanomesh (GNM) magnets with saturation magnetization values as large ∼10−4 emu/mm2, which are 10–100 times greater than those previous GNM hydrogenated by only annealing under hydrogen molecule (H2) atmosphere, even at room temperature. This is realized significant increase area mono-H-terminated pore edges using silsesquioxane resist treatment electron beam irradiation, can produce mono-H detaching...

The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure edges 2D materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated nanomeshes (NMs), few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM hexagonal boron-nitride (hBN) O-terminated hBNNMs annealed at 500 °C show the largest FM, while...

The growth of two-dimensional van der Waals magnetic materials presents attractive opportunities for exploring new physical phenomena and valuable applications. Among these materials, Fe

The quantum-spin-Hall (QSH) phase and its helical edge spins of two-dimensional (2D) topological insulators (TIs) are attracting increasing attention. spin currents a favorite to applications in dissipationless spintronic devices with low error rates because the existing along sample 1D edges topologically protected time-reversal symmetry easily controlled by external bias voltages. Moreover, combining ferromagnetic or superconductor electrodes yields various exciting phenomena those...

The direct observation of substrate potential (V/sub sub/) changes is experimentally reported, for the first time, on three kinds kink effects (abrupt increases drain current) with a strong light-sensitivity in an AlGaAs/InGaAs Pseudomorphic HEMT (PHEMT). dependence V/sub sub/ are measured by using side-gate electrode. effect observed increase from negative to positive value light. In dark, this eliminated, second and third at high low D/s, respectively. kinks, sub/s have values all D/...