A5037747813- High Entropy Alloys Studies
- Additive Manufacturing Materials and Processes
- High-Temperature Coating Behaviors
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced materials and composites
Fujian University of Technology
2023-2024
University of Hong Kong
2023
CoCrFeMnNiNbx (x = 0, 0.25, 0.5, 0.75, and 1.0) high-entropy alloy coatings were prepared on the AISI 1045 steel substrate surface by laser cladding to explore effects of different Nb content microstructure, microhardness, wear resistance, corrosion resistance high entropy coatings. The microstructure CoCrFeMnNi was composed single face-centered cubic (FCC) solid-solution phases without addition. coating mainly a dual-phase structure FCC Laves after addition transformed from hypoeutectic...
SiC junction barrier Schottky diode fabrication involves multi-folded Al ion implantation for realizing p-type doping. With a new recipe, we demonstrate that the trade-off between sufficiently high acceptor activation and low residual concentration of carbon vacancies - acting as free carrier traps may be resolved applying relatively temperature anneals (1700°C), followed by thermal oxidation which leads to in- diffusion interstitials from C-rich sacrifice-oxide/SiC interface. Specifically,...
Abstract With the development of new materials and devices, defect characterization techniques, such as deep level transient spectroscopy (DLTS), face challenge providing more accurate information identification. However, nonexponential capacitance features are introduced for various reasons, making widely adopted rate window technique encounter difficulties during analysis, which may lead to incorrect conclusions.In this study, transients a SiC junction barrier Schottky diode were...
Abstract Reverse bias currents of ten commercial junction barrier Schottky diodes were measured, and the dies studied by scanning electron microscope (SEM) cathodoluminescence (CL) after de-capsulation diodes. Defect emissions (DEs) 2.62 eV observed in all CL spectra. By comparing SEM images, integral intensity spatial mappings reverse leakage currents, correlations between current, Al-implantation process established. The data current against voltage taken at room temperature followed Poole...