A5073166396- Solid-state spectroscopy and crystallography
- Crystal Structures and Properties
- Nonlinear Optical Materials Research
- Phase-change materials and chalcogenides
- Ferroelectric and Piezoelectric Materials
- Chalcogenide Semiconductor Thin Films
- Acoustic Wave Resonator Technologies
- Inorganic Chemistry and Materials
- Optical and Acousto-Optic Technologies
- Advanced ceramic materials synthesis
- Boron and Carbon Nanomaterials Research
- Thermodynamic and Structural Properties of Metals and Alloys
- Nuclear materials and radiation effects
- Advanced Semiconductor Detectors and Materials
- Advanced materials and composites
- Material Science and Thermodynamics
- Material Properties and Applications
- Nuclear Materials and Properties
- Liquid Crystal Research Advancements
- Diamond and Carbon-based Materials Research
- Muon and positron interactions and applications
- Intermetallics and Advanced Alloy Properties
- Metal and Thin Film Mechanics
- Magneto-Optical Properties and Applications
- MXene and MAX Phase Materials
Azerbaijan National Academy of Sciences
2010-2022
Elemental powders of W, B4C, TiC and C (graphite) in percentage weight ratio W-–6 wt% B4C–2 TiC–1 are used as precursors mechanical alloying process aimed at producing tungsten-based material. The composition the obtained material is nearly single-phase W2B (∼98%) with small additions WB (<2%), unveiled by XRD analysis. Irradiation 2.5 MeV helium ions to a fluence 5.0 × 1020 ion/cm2 was performed induced radiation damage assessed. data reduction size grains from 300 nm 260 upon irradiation....
Abstract Temperature dependent infrared (IR) and optical spectroscopic ellipsometry methods are used to investigate peculiarities of the transitions from ionic conductivity superionic states in Ag 2 S Se compounds. The structural phase (SPTs), known as β→α transition these semiconductors, investigated also with methods. electronic band structure at SPT changes sharply monoclinic bcc phase, which occurs T = 453 K super state, where all interband optic region, corresponding β‐phase, disappear....
Abstract The percolation threshold (PT) temperatures T c1,c2 of two non‐equivalent Ag + 1,2 ions in 2 S and Se lattices were determined from the temperature dependence low‐frequency (25‐10 6 Hz) impedance spectroscopy measurements. At PT c1 ≈200 K c2 ≈ 334 K, an abrupt increase dielectric function ε 1 (ω) crystal a very large negative value, ≈‐10 9 , to positive value 10 was observed, which is assumed result dipole relaxation. strong peaks losses (ω), tgδ(ω) Z also at . Two significant...
Dependencies of the lattice parameters and coefficient thermal expansion TlInTe2 crystals on temperature are studied at a wide range temperatures by using XRD, dilatometer, differential analysis, impedance spectroscopy (IS) methods. The IS measurements dielectric function were done along c-axis normal to (110)-plane. for E ⊥ (110)-plane was two values amplitudes, U0 = 0.04 V 1 V, ac-voltage with different frequencies; moreover, E∥c realized only. demonstrate sequence phase transitions (PTs)...
Abstract Temperature‐dependent dielectric and conduction properties of the impurity‐doped gamma‐irradiated samples TlInS 2 semiconductor‐ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging material temperature provided that central ion InS 4 tetrahedron replaced by an impurity atom such as Mn or Cr, radiation dose exceeds 400 Mrad. Same NMR‐studies, present work drives to conclusion In‐displacements among components order...
In this work, the dielectric and electrical properties of TlInS 2 crystal have been studied in temperature range 300–550 K before after being implanted with H[Formula: see text] ion. The parameters such as real imaginary parts permittivity, impedance loss investigated range. role free ions relaxation process when f [Formula: 10 kHz on basis study frequency 25–10 6 Hz has determined. It observed that interdependencies permittivity go beyond standard.
Extruded samples of [Formula: see text] solid solutions doped with 0.0005 at.% Te were obtained and the electrical conductivity text], thermoelectric power (Seebeck) Hall thermal coefficients investigated in range text]–300 K magnetic field strength up to A/m, as annealed after extrusion, non-irradiated gamma-quanta same irradiated gamma quanta at different doses. It was found that low doses (1 Mrad) irradiation, radiation defects (RDs) appear which play role donor centers, a result...