A5003691877- Muon and positron interactions and applications
- Advanced ceramic materials synthesis
- Crystal Structures and Properties
- Boron and Carbon Nanomaterials Research
- Solid-state spectroscopy and crystallography
- MXene and MAX Phase Materials
- Nuclear materials and radiation effects
- Advanced materials and composites
- Graphite, nuclear technology, radiation studies
- Nuclear Materials and Properties
- Nonlinear Optical Materials Research
- Intermetallics and Advanced Alloy Properties
- Photonic and Optical Devices
- Nuclear Physics and Applications
- Radiation Effects in Electronics
- Radiation Shielding Materials Analysis
- Semiconductor materials and interfaces
- Titanium Alloys Microstructure and Properties
- Inorganic Chemistry and Materials
- Silicon Nanostructures and Photoluminescence
- Optical and Acousto-Optic Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Advancements in Battery Materials
Azerbaijan University of Architecture and Construction
2024
Khazar University
2023-2024
Joint Institute for Nuclear Research
2023-2024
Azerbaijan National Academy of Sciences
2017-2019
Effects of postgrowth high-temperature annealing on vacancy complexes and photoluminescence (PL) from GeSiSn/Si multiple quantum wells (MQWs) are studied. The series PL peaks related to the vacancy-tin was observed for as-grown samples including different structures, such as MQWs, multilayer periodic structure with GeSiSn dots (QDs), GeSn cross-structures upon thick layers. band intensity is significantly reduced after at 700 °C corresponding reduction in density, demonstrated by positron...
In this work, the dielectric and electrical properties of TlInS 2 crystal have been studied in temperature range 300–550 K before after being implanted with H[Formula: see text] ion. The parameters such as real imaginary parts permittivity, impedance loss investigated range. role free ions relaxation process when f [Formula: 10 kHz on basis study frequency 25–10 6 Hz has determined. It observed that interdependencies permittivity go beyond standard.
The dielectric and impedance spectra of TlGaSe 2 crystals have been studied at temperatures in the 100–500 K range alternating current (AC [Formula: see text]1 V). It has shown that conductivity is mainly an ionic characteristic above 400 K. well-defined peak frequency dependence imaginary part text] observed 215–500 temperature range. In a constant field, there occurs significant decrease electrical due course. contribution to (76% text]) estimated from kinetic change under influence...