A5090965620- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Nuclear physics research studies
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Advanced Chemical Physics Studies
- Nuclear Physics and Applications
- Atomic and Molecular Physics
- Quantum Chromodynamics and Particle Interactions
- Semiconductor materials and devices
- Surface and Thin Film Phenomena
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Mining and Gasification Technologies
- Laser Design and Applications
- History and advancements in chemistry
- Particle physics theoretical and experimental studies
- ZnO doping and properties
- Environmental and Biological Research in Conflict Zones
- Quantum and electron transport phenomena
- Engineering and Environmental Studies
- Advanced Sensor Technologies Research
Institute of Semiconductor Physics
2016-2025
Russian Academy of Sciences
2014-2024
A.O. Kovalevsky Institute of Biology of the Southern Seas
2024
Russian Engineering Academy
2023
Siberian Branch of the Russian Academy of Sciences
2011-2021
Ufa State Petroleum Technological University
2014-2021
Marine Hydrophysical Institute
2015
Kurchatov Institute
1971-1998
Institute of Cell Biophysics
1991
Institute of Atomic Energy
1971
Effects of postgrowth high-temperature annealing on vacancy complexes and photoluminescence (PL) from GeSiSn/Si multiple quantum wells (MQWs) are studied. The series PL peaks related to the vacancy-tin was observed for as-grown samples including different structures, such as MQWs, multilayer periodic structure with GeSiSn dots (QDs), GeSn cross-structures upon thick layers. band intensity is significantly reduced after at 700 °C corresponding reduction in density, demonstrated by positron...
Abstract Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both Si silicon-on-insulator (SOI) substrates were investigated. Elastic strained state grown films was demonstrated by x-ray diffractometry. Annealing structures before the mesa fabrication can improve ideality factor current-voltage characteristics. The lowest dark current density at reverse bias 1 V reaches value 0.8 mA/cm2. cutoff wavelength shifts to long-wavelength region with...
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both Si silicon-on-insulator (SOI) substrates were investigated. Elastic strained state grown films was demonstrated by x-ray diffractometry. Annealing structures before the mesa fabrication can improve ideality factor current-voltage characteristics. The lowest dark current density at reverse bias 1 V reaches value 0.8 mA/cm2. cutoff wavelength shifts to long-wavelength region with Sn...
Electron states in Ge/Si heterostructures with double quantum dots were studied by use of the electron spin resonance (ESR) method. It was demonstrated that spatial localization electrons as well momentum space can be controlled change spacer thickness between layers. New ESR signals, indicating on base edges dots, obtained for structures layers vertically aligned Ge separated a 2-nm-thick Si layer. Anisotropy $g$ factor is typical ${\ensuremath{\Delta}}^{100}$ and...
The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of morphological film states in temperature range 150 °C-450 °C at tin content from 0% to 35% built. phase diagram superstructural change surface Sn grown annealing 0 °C-850 was established. specular beam oscillations first obtained during 300 up 35%. transmission electron microscopy x-ray diffractometry data confirm crystal perfection pseudomorphic state, also presence smooth heterointerfaces...
The effect of delta-doping on the performance ten-period Ge/Si quantum-dot (QD) mid-infrared photodetectors (λmax≃3.4 μm) was investigated. Ge QDs fabricated by molecular-beam epitaxy at 500 °C are overgrown with Si 600 °C. Each barrier contains a boron layer located near QD plane to provide holes dots. Within sample set, we examined devices different positions δ-doping respect plane, distances between and doping densities. All detectors show pronounced photovoltaic behavior implying...
Critical thicknesses of two-dimensional to three-dimensional growth in Ge x Si1−x layers were measured as a function composition for different temperatures. In addition the (2 × 1) superstructure film grown on Si(100), are characterized by formation n) reconstruction. We n all Ge/Ge Si1−x/Ge heterosystem using our software with respect video recording reflection high-energy electron diffraction (RHEED) pattern during growth. The reaches minimum value about 8 clear layer, whereas films, is...
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on composition for GeSiSn films with a fixed Ge content and Sn from 0 16% at temperature 150 °С have been obtained. phase diagrams superstructure change during epitaxial Si Ge(100) built. Using diagram data, it becomes possible identify cover surface control segregation observed reflection high-energy electron diffraction (RHEED) pattern. multilayer structures pseudomorphic layers island...
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500 °C are overgrown with Si different temperatures Tcap, and their mid-infrared photoresponse is investigated. The photocurrent maximum shifts from 2.3 to 3.9 μm increasing Tcap 300 750 °C. best performance achieved for the detector = 600 in a photovoltaic mode. At sample temperature of 90 K no applied bias, responsivity 0.43 mA/W detectivity 6.2 × 1010 cmHz1/2/W λ 3 were measured under normal incidence infrared radiation. device...
Abstract The surface morphology of Ge 0.96 Sn 0.04 /Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel (STM) ex situ has been studied. statistical data for the density nanodots (ND) depending on their lateral size have obtained. Maximum ND (6 × 10 11 cm -2 ) with average 7 nm can be obtained 250°C. Relying reflection high energy electron diffraction, AFM, STM, it is concluded that molecular beam growth 1- x small...
Abstract Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of annealed in the temperature range 200 °C–1000 °C studied. reflection high-energy electron diffraction during film deposition MBE method x-ray phase analysis showed that initial are polycrystalline phase. A single orthorhombic SnO 2 was for first time after annealing air at a about 500 °C. sharp change constants near established using ellipsometry....
We report on intraband photocurrent spectroscopy of Ge self-assembled quantum dots placed a strained Si0.65Ge0.35 well, which, in turn, is incorporated Si matrix. The p-type devices show broad spectral response ranging from 2 to 12 µm. By comparison between measurements and the hole energy level scheme, as deduced six-band k ⋅ p calculations, two main contributions photoresponse are identified. absorption band 4 µm attributed bound-to-continuum transitions bound states continuum barrier. at...
The influence of parameters germanium deposition on wetting layer thickness was studied during the growth Si(1 0 0) surface. A non-monotone dependence temperature discovered and accounted for by changing mechanism layer-by-layer growth. conclusion supported mode oscillations reflection high-energy electron diffraction (RHEED) specular beam. In addition, is strongly affected replication number silicon spacer due to accumulation elastic strains throughout structure.