The present study was undertaken to determine the mechanism of antibacterial activity a polyphenolic fraction, composed mainly catechin and isorhamnetin, previously isolated from Kombucha, 14-day fermented beverage sugared black tea, against enteropathogen Vibrio cholerae N16961. Bacterial growth found be seriously impaired by fraction in dose-dependent manner. Scanning Electron Microscopy demonstrated morphological alterations bacterial cells when exposed concentration-dependent...

A photograph of g-C₃N₄ (CN)-based flexible triboelectric nanogenerator and scheme its applicability for power generation.

We have studied the frequency dependent conductivity of semiconducting cadmium vanadate glasses compositions xV2O5–(1−x)CdO where x = 0.6, 0.7, 0.8 and 0.9 in temperature range 93–423 K 10 Hz–2 MHz. observed sub-linear dependence weak ac conductivity. analyzed experimental results framework various theoretical models based on quantum mechanical tunneling classical hopping over barriers. It has been that is consistent with overlapping large polaron model, while barrier fail to interpret data.

Alfalfa sprouts have been implicated in multiple foodborne disease outbreaks. This study evaluated the growth of Listeria monocytogenes during sprouting alfalfa seeds and effectiveness daily chlorine dioxide & ozone rinsing controlling growth. inoculated with L. were sprouted for 5 days (25°C) a aqueous ClO2 (3 ppm, 10 min) or water (2 rinse. Neither treatment significantly reduced on seeds. The initial level was 3·44 ± 0·27, which increased to c. 7·0 log CFU per g following 3 sprouting....

In this paper, we have studied the electrical conductivity for different compositions of zinc vanadate semiconducting glasses within a wide temperature range. We analyzed dependence framework various models hopping conduction. observed that Mott’s phonon-assisted nearest neighbor model small polarons is appropriate describing data at high temperatures. further lower temperatures, variable range operative, while Greaves’ valid intermediate The values density states Fermi level, which are...

The temperature and composition dependence of the electrical conductivity cadmium vanadate semiconducting glasses formed with V2O5 as a unique network former has been studied in this paper. results for these have compared those traditional different formers (phosphate, borate, etc). variation activation energy is much stronger than that glasses. strong compositional present attributed to significant structural changes observed Fourier transform infrared (FT-IR) spectra due introduction CdO...

The low-temperature breakdown characteristics of n-Ge are investigated theoretically using various models for the recombination process non-equilibrium carriers. energy distribution carriers at onset is assumed to be Maxwellian and effective electron temperature used. calculations carried out a parabolic law dispersion scalar mass. theoretical results some found in good agreement with available experimental data.

The piezoelectric scattering rate of the free carriers in a semiconductor is investigated at low lattice temperatures when approximations well-known traditional theory are not valid. calculations carried out for an isotropic with parabolic law dispersion and scalar effective mass. Numerical made InSb 1, 4, 20, 50 K. results interesting, being significantly different from those that follow also useful study low-temperature transport characteristics pure compound semiconductors having no...

A high-power high-speed phototransistor has been demonstrated using a traveling-wave (TW) structure with an integrated polyimide optical waveguide. In our configuration, power transfer is distributed along the length of device via leaky mode coupling light from waveguide to active region phototransistor. The TW electrode design allows for electrically long while maintaining high bandwidths. Due increased absorption volume, handling capabilities TW-heterojunction phototransistors (TW-HPT's)...

In the presence of shallow attractive traps, galvanomagnetic effects nonequilibrium carriers are investigated for compensated nonpolar semiconductors at low lattice temperatures when free carrier loses momentum and energy, respectively, by scattering from a system randomly oriented dipoles deformation acoustic phonons. Numerical calculations made $n\ensuremath{-}\mathrm{G}\mathrm{e}$ liquid-helium temperature. It is shown that results useful determination some capture parameters an...

Impurity breakdown is investigated in the general case of any mechanism energy and momentum scattering hot carriers presence a strong or weak transverse magnetic field. Calculations are carried out with approximation parabolic law dispersion scalar effective mass. The equation obtained an explicit form whose analytical solution possible some limiting cases. For definite mechanisms field finite theoretical experimental results found to be good agreement. Es wird der Störstellendurchbruch im...

The energy loss rate of an electron in a degenerate semiconductor because inelastic interaction with deformation potential and piezoelectric acoustic phonons is calculated the case when lattice temperature low, so that approximations well-known traditional theory are not valid. Compared to results those for non-degenerate semiconductors, here reveals more complex altogether different dependence on carrier temperature. numerical obtained Si GaAs show how significantly degeneracy level, true...

The infrared Faraday rotation due to hot carriers in a compensated nonpolar semiconductor the presence of shallow attractive traps is investigated. calculations are carried out for parabolic law dispersion and scalar effective mass. Numerical made $n$- Ge at 4.2 K. results useful estimation degree compensation material capture parameter trapping centers which control lifetime non-equilibrium carriers.

For a general class of scalar-tensor theories gravitation proposed by Nordtvedt (1970) it is shown that Birkhoff's theorem (1923) holds both in vacuum as well the presence an electromagnetic field when scalar time independent.

Abstract The scattering rates of the free electrons in a semiconductor depend upon energy band structure material. No possesses parabolic band. acoustic rate for non‐parabolic and is well known high lattice temperatures when effectively elastic. But temperature quite low ( <20 K) process becomes inelastic. effect non‐parabolicity on piezoelectric investigated here under condition low. same at also obtained here. Numerical calculations are carried out different Si which has value factor...