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Contact & Profiles
A5063687587
Research Areas
- Silicon Carbide Semiconductor Technologies
- Thermal properties of materials
- Advancements in Semiconductor Devices and Circuit Design
ETH Zurich
2022
Silicon carbide (SiC) power devices have the potential to operate at high temperatures beyond capabilities of silicon devices. At increased temperatures, temperature-dependent material properties SiC die and package multilayer structure can influence electrothermal (ET) device performance. In this article, a new step-back-correction technique implemented in finite-difference-method-based thermal modeling tool is proposed reduce computational cost while maintaining good accuracy ET...
10.1109/tpel.2022.3147688
article
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cc-by
IEEE Transactions on Power Electronics
2022-02-01
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